KTC3192 Datasheet and Replacement

SEMICONDUCTOR KTC3192TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.B CFEATURE High Power Gain : Gpe=29dB(Typ.) (f=10.7MHz).N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBOCollector-Base Voltage 35 VH 0

KTC3192(NPN)TO-92 TransistorsTO-92 1. COLLECTOR 2. EMITTER 3. BASE Features High power gain: Gpe=29dB(Typ)(f=10.7MHZ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches and (millim

KTC3199-OMCCMicro Commercial ComponentsTMKTC3199-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTC3199-GRPhone: (818) 701-4933Fax: (818) 701-4939 KTC3199-BLFeatures High DC Current Gain: hFE=70~700NPN General Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.)Purpose Application Compl

KTC3198 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92 V(BR)CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR Range 70~140 120~240 200~400 1Emitter Collector 2Base 3 3Collector Millimeter Millimeter 2 REF. REF.

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 KTC3198 TRANSISTOR (NPN)1.EMITTERFEATURES 2.COLLECTOR General Purpose Switching Application3.BASE Complementary to KTA1266. Equivalent Circuit C 3198

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate TransistorsTO 92S KTC3199 TRANSISTOR (NPN)1. EMITTERFEATURES 2. COLLECTOR High DC Current Gain3. BASE Complementary to KTA1267123 Equivalent Circuit C3199C3199=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORM

SEMICONDUCTOR KTC3198TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.). at f=1kHz.Complementary to KTA1266. MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base

SEMICONDUCTOR KTC3199TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATIONSWITCHING APPLICATION.BFEATURES High DC Current Gain : hFE=70~700. Excellent hFE LinearityDIM MILLIMETERSOA 3.20 MAX: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).HM B 4.30 MAXC 0.55 MAX Low Noise : NF=1dB(Typ.), 10dB(Max.)._D 2.40 + 0.15E 1.27 Complementary to KTA1267.F 2.30

SEMICONDUCTOR KTC3193TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.BFEATURE High Power Gain : Gpe=30dB(Typ.) (f=10.7MHz). Recommended for FM IF, OSC Stage and AM CONV, IF Stage.DIM MILLIMETERSOA 3.20 MAXHM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_MAXIMUM RATING (Ta=25 )+G 14.00 0.50

SEMICONDUCTOR KTC3197TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION.B CFEATURES High Gain : Gpe=33dB(Typ.) (f=45MHz).N DIM MILLIMETERS Good Linearity of hFE.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTERISTIC SYMBOL RATING

SEMICONDUCTOR KTC3194TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION.B CFEATURES Small Reverse Transfer Capacitance: Cre=0.7pF(Typ.). N DIM MILLIMETERS Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )

SEMICONDUCTOR KTC3195TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION.BFEATURES Small Reverse Transfer Capacitance: Cre=0.7pF(Typ.). DIM MILLIMETERSOA 3.20 MAX Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60

SEMICONDUCTOR KTC3199LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AUDIO AMPLIFIER APPLICATION.FEATURES B High DC Current Gain : hFE=70 700. Excellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERSOA 3.20 MAX Low Noise : NF=0.2dB(Typ.), 3dB(Max.).HM B 4.30 MAXC 0.55 MAX Complementary to KTA1267L._D 2.40 + 0.15E 1.27F 2.30C_+

SEMICONDUCTOR KTC3198ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSA 4.70 MAXLow Noise : NF=1dB(Typ.). at f=1kHz. EKB 4.80 MAXGComplementary to KTA1266A. C 3.70 MAXDD 0.45E

SEMICONDUCTOR KTC3190TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.HF BAND AMPLIFIER APPLICATION.B CFEATURE Low Noise Figure : NF=3.5dB(Max.) (f=1MHz).N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.

SEMICONDUCTOR KTC3198LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AMPLIFIER APPLICATION.B CFEATURES Excellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise : NF=0.2dB(Typ.). f=(1kHz).A 4.70 MAXEKB 4.80 MAXComplementary to KTA1266L. (O,Y,GR class) GC 3.70 MAXDD 0.45E 1.00F 1.2

KTC3197(NPN)TO-92 Transistors 1.EMITTER TO-92 2. COLLECTOR 3. BASE Features High Gain: Gpe=33dB(Typ) (f=45MHZ). Good linearity of hFE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 4 VIC Collector Current -Continuous 50 mA Dimensions in

KTC3195TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Small reverse transfer capacitance Cre=0.7pF(Typ) Low noise Figure: NF=2.5dB(Typ.) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Cur

KTC3198 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h ,, KTA1266 FEExcellent hFE linearity, low noise, complementary pair with KTA1266. / Applications General amplifier

KTC3199M(BR3DG3199M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , h , FEHigh DC current gain, excellent hFE linearity, low noise / Applications General amplifier

DIP Type TransistorsNPN TransistorsKTC3198Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise0.60 Max Complementary to KTA12660.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 5