KTC3192 Todos los transistores

SEMICONDUCTOR KTC3192 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE High Power Gain Gpe=29dB(Typ.) (f=10.7MHz). N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO Collector-Base Voltage 35 V H 0

KTC3192(NPN) TO-92 Transistors TO-92 1. COLLECTOR 2. EMITTER 3. BASE Features High power gain Gpe=29dB(Typ)(f=10.7MHZ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches and (millim

KTC3199-O MCC Micro Commercial Components TM KTC3199-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTC3199-GR Phone (818) 701-4933 Fax (818) 701-4939 KTC3199-BL Features High DC Current Gain hFE=70 700 NPN General Excellent hFE Linearity hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) Low Noise NF=1.0dB(Typ.), 10dB(Max.) Purpose Application Compl

KTC3198 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92 V(BR)CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR Range 70 140 120 240 200 400 1Emitter Collector 2Base 3 3Collector Millimeter Millimeter 2 REF. REF.

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 KTC3198 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching Application 3.BASE Complementary to KTA1266. Equivalent Circuit C 3198

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S KTC3199 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High DC Current Gain 3. BASE Complementary to KTA1267 1 2 3 Equivalent Circuit C3199 C3199=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORM

SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(2)=100(Typ.) at VCE=6V, IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise NF=1dB(Typ.). at f=1kHz. Complementary to KTA1266. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base

SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES High DC Current Gain hFE=70 700. Excellent hFE Linearity DIM MILLIMETERS O A 3.20 MAX hFE(0.1mA)/hFE(2mA)=0.95(Typ.). H M B 4.30 MAX C 0.55 MAX Low Noise NF=1dB(Typ.), 10dB(Max.). _ D 2.40 + 0.15 E 1.27 Complementary to KTA1267. F 2.30

SEMICONDUCTOR KTC3193 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B FEATURE High Power Gain Gpe=30dB(Typ.) (f=10.7MHz). Recommended for FM IF, OSC Stage and AM CONV, IF Stage. DIM MILLIMETERS O A 3.20 MAX H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ MAXIMUM RATING (Ta=25 ) + G 14.00 0.50

SEMICONDUCTOR KTC3197 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES High Gain Gpe=33dB(Typ.) (f=45MHz). N DIM MILLIMETERS Good Linearity of hFE. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING

SEMICONDUCTOR KTC3194 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES Small Reverse Transfer Capacitance Cre=0.7pF(Typ.). N DIM MILLIMETERS Low Noise Figure NF=2.5dB(Typ.) (f=100MHz). A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 )

SEMICONDUCTOR KTC3195 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B FEATURES Small Reverse Transfer Capacitance Cre=0.7pF(Typ.). DIM MILLIMETERS O A 3.20 MAX Low Noise Figure NF=2.5dB(Typ.) (f=100MHz). H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60

SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B High DC Current Gain hFE=70 700. Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS O A 3.20 MAX Low Noise NF=0.2dB(Typ.), 3dB(Max.). H M B 4.30 MAX C 0.55 MAX Complementary to KTA1267L. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ +

SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=100(Typ.) at VCE=6V, IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS A 4.70 MAX Low Noise NF=1dB(Typ.). at f=1kHz. E K B 4.80 MAX G Complementary to KTA1266A. C 3.70 MAX D D 0.45 E

SEMICONDUCTOR KTC3190 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF BAND AMPLIFIER APPLICATION. B C FEATURE Low Noise Figure NF=3.5dB(Max.) (f=1MHz). N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.

SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=100(Typ.) at VCE=6V, IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise NF=0.2dB(Typ.). f=(1kHz). A 4.70 MAX E K B 4.80 MAX Complementary to KTA1266L. (O,Y,GR class) G C 3.70 MAX D D 0.45 E 1.00 F 1.2

KTC3197(NPN) TO-92 Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High Gain Gpe=33dB(Typ) (f=45MHZ). Good linearity of hFE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in

KTC3195 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Small reverse transfer capacitance Cre=0.7pF(Typ) Low noise Figure NF=2.5dB(Typ.) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Cur

KTC3198 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h , , KTA1266 FE Excellent hFE linearity, low noise, complementary pair with KTA1266. / Applications General amplifier

KTC3199M(BR3DG3199M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , h , FE High DC current gain, excellent hFE linearity, low noise / Applications General amplifier

DIP Type Transistors NPN Transistors KTC3198 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise 0.60 Max Complementary to KTA1266 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 5