KTC3920 Datasheet and Replacement
Type Designator: KTC3920
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT23
KTC3920 Datasheet (PDF)
ktc3911s.pdf

SEMICONDUCTOR KTC3911STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AMPLIFIER APPLICATION.FEATURESEL B LHigh Voltage : VCEO=120V.DIM MILLIMETERSExcellent hFE Linearity_+2.93 0.20AB 1.30+0.20/-0.15: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).C 1.30 MAX2High hFE: hFE=200 700. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20Low Noise : NF=1dB(Typ.), 10dB(Max.).1G 1.90
ktc3964.pdf

SEMICONDUCTOR KTC3964TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. ASwitching Applications BDCSolenoid Drive ApplicationsETemperature Compensated for Audio Amplifier Output StageFFEATURESGHigh DC current gain : hFE = 500(min) (IC=400mA)HLow Collector emitter saturation voltage : VCE(sat)=0.5V(max)DIM MILLIMETERSJA 8.3 MAX(IC=300mA)
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: BDS17SMD05
Keywords - KTC3920 transistor datasheet
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KTC3920 equivalent finder
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History: BDS17SMD05



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