All Transistors. KTC8550 Datasheet

 

KTC8550 Datasheet and Replacement


   Type Designator: KTC8550
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92
      - BJT Cross-Reference Search

   

KTC8550 Datasheet (PDF)

 ..1. Size:360K  kec
 ktc8550.pdf pdf_icon

KTC8550

SEMICONDUCTOR KTC8550TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8050.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -35 VCollector-Base VoltageG 0.85H 0.45VCEO -30 VCollector-Emitter Voltage_HJ 14.0

 0.1. Size:360K  kec
 ktc8550a.pdf pdf_icon

KTC8550

SEMICONDUCTOR KTC8550ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8050A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage -35 VG 0.85H 0.45VCEOCollector-Emitter Voltage -30 V_HJ 14

 0.2. Size:352K  kec
 ktc8550s.pdf pdf_icon

KTC8550

SEMICONDUCTOR KTC8550STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8050S.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201MAXIMUM RATING (Ta=25) G 1.90H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55VCBO -35 VC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC458B | BC558AP | 2SC2813Q3 | 2N6477 | 3CA1941

Keywords - KTC8550 transistor datasheet

 KTC8550 cross reference
 KTC8550 equivalent finder
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 KTC8550 substitution
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