KTD1146 Specs and Replacement
Type Designator: KTD1146
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO92
KTD1146 Substitution
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KTD1146 datasheet
SEMICONDUCTOR KTD1146 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION CAMERA STROBO (For Electronic Flash Unit) B C FEATURES Low VCE(SAT). High Performance at Low Supply Voltage. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + ... See More ⇒
SEMICONDUCTOR KTD1145 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVE, HAMMER DIRVE, LAMP DRIVE. STROBO, DC-DC CONVERTER, MOTOR DRIVE. B D FEATURES Low Saturation Voltage. DIM MILLIMETERS P VCE(sat)=0.5V(Max.) (IC=3A, IB=60mA). DEPTH 0.2 A 7.20 MAX High Collector Current. B 5.20 MAX C C 0.60 MAX S IC=5A, ICP(Peak Current )=8A. D 2.50 MAX Q E 1.15 MAX K Wid... See More ⇒
Detailed specifications: KTC9016, KTC9018, KTD1003A, KTD1003B, KTD1003C, KTD1028, KTD1047, KTD1145, S8050, KTD1302, KTD1303, KTD1304, KTD1351, KTD1352, KTD1413, KTD1414, KTD1415
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