KTD1146 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD1146
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
KTD1146 Transistor Equivalent Substitute - Cross-Reference Search
KTD1146 Datasheet (PDF)
ktd1146.pdf
SEMICONDUCTOR KTD1146TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATIONCAMERA STROBO (For Electronic Flash Unit)B CFEATURES Low VCE(SAT). High Performance at Low Supply Voltage. N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 +
ktd1145.pdf
SEMICONDUCTOR KTD1145TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVE, HAMMER DIRVE, LAMP DRIVE.STROBO, DC-DC CONVERTER, MOTOR DRIVE.B DFEATURES Low Saturation Voltage.DIM MILLIMETERSP: VCE(sat)=0.5V(Max.) (IC=3A, IB=60mA).DEPTH:0.2A 7.20 MAX High Collector Current. B 5.20 MAXCC 0.60 MAXS: IC=5A, ICP(Peak Current )=8A.D 2.50 MAXQE 1.15 MAXK Wid
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
