KTD1937 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD1937
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO220F
KTD1937 Transistor Equivalent Substitute - Cross-Reference Search
KTD1937 Datasheet (PDF)
ktd1937.pdf
SEMICONDUCTOR KTD1937TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER.ACDIM MILLIMETERSSFEATURES_A 10.0 0.3+_+B 15.0 0.3EHigh hFE : 500 1500(IC=1A).C _2.70 0.3+D 0.76+0.09/-0.05Low Saturation :VCE(sat)=0.35V(Max.) (IC=5A)._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+
ktd1945.pdf
isc Silicon NPN Power Transistor KTD1945DESCRIPTIONLow Saturation Voltage-: V = 0.5V(Max)@ I = 2ACE(sat) CHigh Collector Power Dissipation-: P = 25W(Max)CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
