KTD1937 Specs and Replacement
Type Designator: KTD1937
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 500
Package: TO220F
KTD1937 Substitution
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KTD1937 datasheet
SEMICONDUCTOR KTD1937 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER. A C DIM MILLIMETERS S FEATURES _ A 10.0 0.3 + _ + B 15.0 0.3 E High hFE 500 1500(IC=1A). C _ 2.70 0.3 + D 0.76+0.09/-0.05 Low Saturation VCE(sat)=0.35V(Max.) (IC=5A). _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + ... See More ⇒
isc Silicon NPN Power Transistor KTD1945 DESCRIPTION Low Saturation Voltage- V = 0.5V(Max)@ I = 2A CE(sat) C High Collector Power Dissipation- P = 25W(Max) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto... See More ⇒
Detailed specifications: KTD1302, KTD1303, KTD1304, KTD1351, KTD1352, KTD1413, KTD1414, KTD1415, TIP42C, KTD2058, KTD2059, KTD2060, KTD2061, KTD2066, KTD2092, KTD2424, KTD3055
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