KTN2907A Datasheet and Replacement
Type Designator: KTN2907A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
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KTN2907A Datasheet (PDF)
ktn2907s ktn2907as.pdf

SEMICONDUCTOR KTN2907S/ASTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Low Leakage Current A 2.93 0.20+B 1.30+0.20/-0.15: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15m
ktn2907ae.pdf

SEMICONDUCTOR KTN2907AETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESBLow Leakage CurrentDDIM MILLIMETERS: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.D 0.27+0.10/-0.05_Complementar
ktn2907u ktn2907au.pdf

SEMICONDUCTOR KTN2907U/AUTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Leakage Current_+A 2.00 0.20D2: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V._+B 1.25 0.15_+C 0.90 0.10Low Saturation Voltage 31D 0.3+0.10/-0.05_+: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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