MA1 Datasheet and Replacement

tOctober 2010tmFDMA1028NZDual N-Channel PowerTrench MOSFETGeneral Description Features 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V This device is designed specifically as a single package RDS(ON) = 86 m @ VGS = 2.5V solution for dual switching requirements in cellular Low profile 0.8 mm maximum in the new package handset and other ultra-portable

May 2010FDMA1024NZDual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 mFeatures General Description Max rDS(on) = 54 m at VGS = 4.5 V, ID = 5.0 AThis device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m at VGS = 2.5 V, ID = 4.2 Aultra-portable applications. It features two indepe

July 2014FDMA1430JPIntegrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 Afor loadswitching in cellular handset and other ultra-portable Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 Aapplications. It features a 50

May 2010FDMA1032CZtm20V Complementary PowerTrench MOSFET General Description Features Q1: N-Channel This device is designed specifically as a single package 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V solution for a DC/DC 'Switching' MOSFET in cellular RDS(ON) = 86 m @ VGS = 2.5V handset and other ultra-portable applications. It Q2: P-Channel features a

May 2009FDMA1023PZtmDual P-Channel PowerTrench MOSFET20V, 3.7A, 72mFeatures General Description Max rDS(on) = 72m at VGS = 4.5V, ID = 3.7AThis device is designed specifically as a single package solution for the battery charge switch in cellular handset Max rDS(on) = 95m at VGS = 2.5V, ID = 3.2Aand other ultra-portable applications. It features

May 2009FDMA1027PTDual P-Channel PowerTrench MOSFET20 V, 3 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 120 m at VGS = -4.5 V, ID = -3.0 Afor the battery charge switch in cellular handset and other Max rDS(on) = 160 m at VGS = -2.5 V, ID = -2.5 Aultra-portable applications. It features tw

May 20 FDMA1025PtmDual P-Channel PowerTrench MOSFET 20V, 3.1A, 155mFeatures General Description Max rDS(on) = 155m at VGS = 4.5V, ID = 3.1AThis device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - Max rDS(on) = 220m at VGS = 2.5V, ID = 2.3Aportable applications. It feat

May 2009tmtmFDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maximu

July 2014FDMA1027PDual P-Channel PowerTrench MOSFET General Description FeaturesThis device is designed specifically as a single package -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two RDS(ON) = 160 m @ VGS = -2.5 Vindependent P-Channel MOSFETs with low on-state

UMA1N / FMA1A Transistors -100mA / -50V Complex digital transistors (with built-in resistors) UMA1N / FMA1A Applications External dimensions (Unit : mm) Inverter, Interface, Driver 2.0UMA1N Features 1.3 0.91) Two DTA124E chips in a UMT or SMT package. 0.65 0.650.72) Mounting cost and area can be cut in half. (5) (4)3) Emitter-common type. (1) (2) (3) Struct

UMA10N / FMA10A / IMB1TransistorsTransistorsUMG1

UMA10N / FMA10A / IMB17ATransistorsTransistorsUMG10N(96-388-A113Z)(94S-811-C113Z)590

TransistorsEmitter common(dual digital transistors)UMA11N / FMA11AFFeatures FExternal dimensions (Units: mm)1) Two DTA143Z chips in a UMT orSMT package.2) Mounting cost and area can be cutin half.FStructureEpitaxial planar typePNP silicon transistor(Built-in resistor type)The following characteristics apply toboth DTr1 and DTr2.FAbsolute maximum ratings (Ta = 25_C)

UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5ATransistorsGeneral purpose (dual digital transistors)UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A External dimensions (Units : mm) Features1) Two DTA124E chips in a UMT or SMT package.UMA1N1.25 Absolute maximum ratings (Ta = 25C)2.1Parameter Symbol Limits UnitSupply voltage VCC -50 V0.1Min.-40Input voltage VIN V ROHM

TransistorsEmitter common(dual digital transistors)UMA11N / FMA11AFFeatures FExternal dimensions (Units: mm)1) Two DTA143Z chips in a UMT orSMT package.2) Mounting cost and area can be cutin half.FStructureEpitaxial planar typePNP silicon transistor(Built-in resistor type)The following characteristics apply toboth DTr1 and DTr2.FAbsolute maximum ratings (Ta = 25_C)

UMA10N / FMA10ATransistorsGeneral purpose (dual digital transistors)UMA10N / FMA10A External dimensions (Units : mm) Features1) Two DTA113Z chips in a UMT package.UMA10N1.25 Equivalent circuits2.1UMA10N FMA10A(3) (2) (1) (3) (4) (5)0.1Min.R1 R1 R1 R1R2 R2 R2 R2ROHM : UMT5EIAJ : SC-88A Each lead has same dimensions(4) (6) (2) (1)JEDEC : SOT-353FMA10A Abs

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

May 2006 FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maxi

UMA11N dual digital transistors (PNP+ PNP)SOT-353 FEATURES Two DTA143Z chips in a package Mounting cost and area can be cut in half Marking: A11 1 Equivalent circuit Absolute maximum ratings (Ta=25) Symbol Parameter Value Units VCC Supply Voltage -50 VIC(MAX) Output Current -100 mAVi Input Voltage -30 to +5 V PD Power Dissipation 150 mWTJ Junction Temperatu

N N-CHANNEL IGBT RIGBT JT050K120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ2.0V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES

N N-CHANNEL IGBT RIGBT JT050N120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ1.80V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Technology FS

IGBT IGBT Modules RIGBT JT075K120F2MA1E MAIN CHARACTERISTICS Package IC 75 A 1200 V V CESVcesat_typ1.9V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techno

IGBT IGBT Modules RIGBT JT075N120F2MA1E MAIN CHARACTERISTICS Package IC 75 A 1200 V V CESVcesat_typ1.9V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techno

IGBT IGBT Modules RIGBT JT100K120F2MA1E MAIN CHARACTERISTICS Package IC 100 A 1200 V V CESVcesat_typ1.9V Vge=15V APPLICATIONS UPS UPS System Welding FEATURES FS Technology FS Low saturation voltage:

IGBT IGBT Modules RIGBT JT150N120F2MA1E MAIN CHARACTERISTICS Package IC 150 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techn

CHENMKO ENTERPRISE CO.,LTDCHUMA1GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88A/SOT-353)SC-88A/SOT353* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

CHENMKO ENTERPRISE CO.,LTDCHFMA10GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74A)SC-74A* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

CHENMKO ENTERPRISE CO.,LTDCHEMA11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation curren

CHENMKO ENTERPRISE CO.,LTDCHUMA11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88A/SOT-353)SC-88A/SOT353* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

CHENMKO ENTERPRISE CO.,LTDCHUMA10GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88A/SOT-353)SC-88A/SOT353* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

CHENMKO ENTERPRISE CO.,LTDCHFMA11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74A)SC-74A* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

PMA1516 PNP SILICON TRIPLE DIFFUSED TRANSISTOR designed for power amplifier applications. FEATURE: High Collector Voltage: VCEO= -180V (Min.) Complementary to PMC3907 Recommend for 80W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value UnitCollector Base Voltage VCBO -180 VCollector Emitter Voltage

PMA1302 PNP SILICON TRIPLE DIFFUSED TRANSISTOR designed for power amplifier applications. TO-3PL MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value UnitCollector Base Voltage VCBO -200 VCollector Emitter Voltage VCEO -200 VEmitter Base Voltage VEBO -5 VCollector Current IC -15 ABase Current IB -1.5 ACollector power Dissipation Tc= 25 C PC 150 WJunction Tempe

TMA10N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N60H TO-220F A10N60H Abs

TMA12N50H Wuxi Unigroup Microelectronics Company 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA12N50H TO-220F A12N50H Abs

TMA10N65H, TMP10N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N65H TO-220F A1

TMA12N65H, TMP12N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA12N65H TO-220F A1

TMA10N80H Wuxi Unigroup Microelectronics Company 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N80H TO-220F A10N80H Abs