Справочник транзисторов. MA1

 

Биполярный транзистор MA1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MA1
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.025 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 75 °C
   Ёмкость коллекторного перехода (Cc): 8 pf
   Статический коэффициент передачи тока (hfe): 245
   Корпус транзистора: TO24

 Аналоги (замена) для MA1

 

 

MA1 Datasheet (PDF)

 0.1. Size:321K  fairchild semi
fdma1028nz.pdf

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MA1

tOctober 2010tmFDMA1028NZDual N-Channel PowerTrench MOSFETGeneral Description Features 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V This device is designed specifically as a single package RDS(ON) = 86 m @ VGS = 2.5V solution for dual switching requirements in cellular Low profile 0.8 mm maximum in the new package handset and other ultra-portable

 0.2. Size:402K  fairchild semi
fdma1024nz.pdf

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MA1

May 2010FDMA1024NZDual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 mFeatures General Description Max rDS(on) = 54 m at VGS = 4.5 V, ID = 5.0 AThis device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m at VGS = 2.5 V, ID = 4.2 Aultra-portable applications. It features two indepe

 0.3. Size:322K  fairchild semi
fdma1430jp.pdf

MA1
MA1

July 2014FDMA1430JPIntegrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 Afor loadswitching in cellular handset and other ultra-portable Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 Aapplications. It features a 50

 0.4. Size:374K  fairchild semi
fdma1032cz.pdf

MA1
MA1

May 2010FDMA1032CZtm20V Complementary PowerTrench MOSFET General Description Features Q1: N-Channel This device is designed specifically as a single package 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V solution for a DC/DC 'Switching' MOSFET in cellular RDS(ON) = 86 m @ VGS = 2.5V handset and other ultra-portable applications. It Q2: P-Channel features a

 0.5. Size:417K  fairchild semi
fdma1023pz.pdf

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MA1

May 2009FDMA1023PZtmDual P-Channel PowerTrench MOSFET20V, 3.7A, 72mFeatures General Description Max rDS(on) = 72m at VGS = 4.5V, ID = 3.7AThis device is designed specifically as a single package solution for the battery charge switch in cellular handset Max rDS(on) = 95m at VGS = 2.5V, ID = 3.2Aand other ultra-portable applications. It features

 0.6. Size:379K  fairchild semi
fdma1027pt.pdf

MA1
MA1

May 2009FDMA1027PTDual P-Channel PowerTrench MOSFET20 V, 3 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 120 m at VGS = -4.5 V, ID = -3.0 Afor the battery charge switch in cellular handset and other Max rDS(on) = 160 m at VGS = -2.5 V, ID = -2.5 Aultra-portable applications. It features tw

 0.7. Size:339K  fairchild semi
fdma1025p.pdf

MA1
MA1

May 20 FDMA1025PtmDual P-Channel PowerTrench MOSFET 20V, 3.1A, 155mFeatures General Description Max rDS(on) = 155m at VGS = 4.5V, ID = 3.1AThis device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - Max rDS(on) = 220m at VGS = 2.5V, ID = 2.3Aportable applications. It feat

 0.8. Size:256K  fairchild semi
fdma1029pz.pdf

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May 2009tmtmFDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maximu

 0.9. Size:423K  fairchild semi
fdma1027p.pdf

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July 2014FDMA1027PDual P-Channel PowerTrench MOSFET General Description FeaturesThis device is designed specifically as a single package -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two RDS(ON) = 160 m @ VGS = -2.5 Vindependent P-Channel MOSFETs with low on-state

 0.10. Size:64K  rohm
uma1n uma1n fma1a.pdf

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UMA1N / FMA1A Transistors -100mA / -50V Complex digital transistors (with built-in resistors) UMA1N / FMA1A Applications External dimensions (Unit : mm) Inverter, Interface, Driver 2.0UMA1N Features 1.3 0.91) Two DTA124E chips in a UMT or SMT package. 0.65 0.650.72) Mounting cost and area can be cut in half. (5) (4)3) Emitter-common type. (1) (2) (3) Struct

 0.11. Size:35K  rohm
uma10n fma10a a10 sot353 sot23-5.pdf

MA1

UMA10N / FMA10A / IMB1TransistorsTransistorsUMG1

 0.12. Size:35K  rohm
uma10n.pdf

MA1

UMA10N / FMA10A / IMB17ATransistorsTransistorsUMG10N(96-388-A113Z)(94S-811-C113Z)590

 0.13. Size:61K  rohm
uma11n.pdf

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TransistorsEmitter common(dual digital transistors)UMA11N / FMA11AFFeatures FExternal dimensions (Units: mm)1) Two DTA143Z chips in a UMT orSMT package.2) Mounting cost and area can be cutin half.FStructureEpitaxial planar typePNP silicon transistor(Built-in resistor type)The following characteristics apply toboth DTr1 and DTr2.FAbsolute maximum ratings (Ta = 25_C)

 0.14. Size:62K  rohm
uma1n fma1a a1 sot353 sot23-5.pdf

MA1

UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5ATransistorsGeneral purpose (dual digital transistors)UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A External dimensions (Units : mm) Features1) Two DTA124E chips in a UMT or SMT package.UMA1N1.25 Absolute maximum ratings (Ta = 25C)2.1Parameter Symbol Limits UnitSupply voltage VCC -50 V0.1Min.-40Input voltage VIN V ROHM

 0.15. Size:62K  rohm
uma11n fma11a a11 sot23-5 sot353.pdf

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TransistorsEmitter common(dual digital transistors)UMA11N / FMA11AFFeatures FExternal dimensions (Units: mm)1) Two DTA143Z chips in a UMT orSMT package.2) Mounting cost and area can be cutin half.FStructureEpitaxial planar typePNP silicon transistor(Built-in resistor type)The following characteristics apply toboth DTr1 and DTr2.FAbsolute maximum ratings (Ta = 25_C)

 0.16. Size:54K  rohm
uma10n fma10a.pdf

MA1

UMA10N / FMA10ATransistorsGeneral purpose (dual digital transistors)UMA10N / FMA10A External dimensions (Units : mm) Features1) Two DTA113Z chips in a UMT package.UMA10N1.25 Equivalent circuits2.1UMA10N FMA10A(3) (2) (1) (3) (4) (5)0.1Min.R1 R1 R1 R1R2 R2 R2 R2ROHM : UMT5EIAJ : SC-88A Each lead has same dimensions(4) (6) (2) (1)JEDEC : SOT-353FMA10A Abs

 0.17. Size:500K  onsemi
fdma1025p.pdf

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.18. Size:123K  onsemi
fdma1029pz.pdf

MA1
MA1

May 2006 FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maxi

 0.19. Size:332K  htsemi
uma11n.pdf

MA1

UMA11N dual digital transistors (PNP+ PNP)SOT-353 FEATURES Two DTA143Z chips in a package Mounting cost and area can be cut in half Marking: A11 1 Equivalent circuit Absolute maximum ratings (Ta=25) Symbol Parameter Value Units VCC Supply Voltage -50 VIC(MAX) Output Current -100 mAVi Input Voltage -30 to +5 V PD Power Dissipation 150 mWTJ Junction Temperatu

 0.20. Size:198K  gsme
gma1037ak.pdf

MA1
MA1

 0.21. Size:86K  chenmko
chuma1gp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHUMA1GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88A/SOT-353)SC-88A/SOT353* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 0.22. Size:173K  chenmko
chfma10gp.pdf

MA1
MA1

CHENMKO ENTERPRISE CO.,LTDCHFMA10GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74A)SC-74A* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

 0.23. Size:118K  chenmko
chema11gp.pdf

MA1
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CHENMKO ENTERPRISE CO.,LTDCHEMA11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation curren

 0.24. Size:181K  chenmko
chuma11gp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHUMA11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88A/SOT-353)SC-88A/SOT353* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 0.25. Size:169K  chenmko
chuma10gp.pdf

MA1
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CHENMKO ENTERPRISE CO.,LTDCHUMA10GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88A/SOT-353)SC-88A/SOT353* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 0.26. Size:185K  chenmko
chfma11gp.pdf

MA1
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CHENMKO ENTERPRISE CO.,LTDCHFMA11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74A)SC-74A* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

 0.27. Size:187K  pmc components
pma1516.pdf

MA1

PMA1516 PNP SILICON TRIPLE DIFFUSED TRANSISTOR designed for power amplifier applications. FEATURE: High Collector Voltage: VCEO= -180V (Min.) Complementary to PMC3907 Recommend for 80W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value UnitCollector Base Voltage VCBO -180 VCollector Emitter Voltage

 0.28. Size:189K  pmc components
pma1302.pdf

MA1

PMA1302 PNP SILICON TRIPLE DIFFUSED TRANSISTOR designed for power amplifier applications. TO-3PL MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value UnitCollector Base Voltage VCBO -200 VCollector Emitter Voltage VCEO -200 VEmitter Base Voltage VEBO -5 VCollector Current IC -15 ABase Current IB -1.5 ACollector power Dissipation Tc= 25 C PC 150 WJunction Tempe

 0.29. Size:279K  cn wuxi unigroup
tma10n60h.pdf

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TMA10N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N60H TO-220F A10N60H Abs

 0.30. Size:250K  cn wuxi unigroup
tma12n50h.pdf

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TMA12N50H Wuxi Unigroup Microelectronics Company 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA12N50H TO-220F A12N50H Abs

 0.31. Size:340K  cn wuxi unigroup
tma10n65h tmp10n65h.pdf

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TMA10N65H, TMP10N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N65H TO-220F A1

 0.32. Size:355K  cn wuxi unigroup
tma12n65h tmp12n65h.pdf

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TMA12N65H, TMP12N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA12N65H TO-220F A1

 0.33. Size:279K  cn wuxi unigroup
tma10n80h.pdf

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TMA10N80H Wuxi Unigroup Microelectronics Company 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N80H TO-220F A10N80H Abs

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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