MA1 - Даташиты. Аналоги. Основные параметры

t October 2010 tm FDMA1028NZ Dual N-Channel PowerTrench MOSFET General Description Features 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V This device is designed specifically as a single package RDS(ON) = 86 m @ VGS = 2.5V solution for dual switching requirements in cellular Low profile 0.8 mm maximum in the new package handset and other ultra-portable

May 2010 FDMA1024NZ Dual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 m Features General Description Max rDS(on) = 54 m at VGS = 4.5 V, ID = 5.0 A This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m at VGS = 2.5 V, ID = 4.2 A ultra-portable applications. It features two indepe

July 2014 FDMA1430JP Integrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 A for loadswitching in cellular handset and other ultra-portable Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 A applications. It features a 50

May 2010 FDMA1032CZ tm 20V Complementary PowerTrench MOSFET General Description Features Q1 N-Channel This device is designed specifically as a single package 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V solution for a DC/DC 'Switching' MOSFET in cellular RDS(ON) = 86 m @ VGS = 2.5V handset and other ultra-portable applications. It Q2 P-Channel features a

May 2009 FDMA1023PZ tm Dual P-Channel PowerTrench MOSFET 20V, 3.7A, 72m Features General Description Max rDS(on) = 72m at VGS = 4.5V, ID = 3.7A This device is designed specifically as a single package solution for the battery charge switch in cellular handset Max rDS(on) = 95m at VGS = 2.5V, ID = 3.2A and other ultra-portable applications. It features

May 2009 FDMA1027PT Dual P-Channel PowerTrench MOSFET 20 V, 3 A, 120 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 120 m at VGS = -4.5 V, ID = -3.0 A for the battery charge switch in cellular handset and other Max rDS(on) = 160 m at VGS = -2.5 V, ID = -2.5 A ultra-portable applications. It features tw

May 20 FDMA1025P tm Dual P-Channel PowerTrench MOSFET 20V, 3.1A, 155m Features General Description Max rDS(on) = 155m at VGS = 4.5V, ID = 3.1A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - Max rDS(on) = 220m at VGS = 2.5V, ID = 2.3A portable applications. It feat

May 2009 tmtm FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maximu

July 2014 FDMA1027P Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two RDS(ON) = 160 m @ VGS = -2.5 V independent P-Channel MOSFETs with low on-state

UMA1N / FMA1A Transistors -100mA / -50V Complex digital transistors (with built-in resistors) UMA1N / FMA1A Applications External dimensions (Unit mm) Inverter, Interface, Driver 2.0 UMA1N Features 1.3 0.9 1) Two DTA124E chips in a UMT or SMT package. 0.65 0.65 0.7 2) Mounting cost and area can be cut in half. (5) (4) 3) Emitter-common type. (1) (2) (3) Struct

UMA10N / FMA10A / IMB1 Transistors Transistors UMG1

UMA10N / FMA10A / IMB17A Transistors Transistors UMG10N (96-388-A113Z) (94S-811-C113Z) 590

Transistors Emitter common (dual digital transistors) UMA11N / FMA11A FFeatures FExternal dimensions (Units mm) 1) Two DTA143Z chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silicon transistor (Built-in resistor type) The following characteristics apply to both DTr1 and DTr2. FAbsolute maximum ratings (Ta = 25_C)

UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A Transistors General purpose (dual digital transistors) UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A External dimensions (Units mm) Features 1) Two DTA124E chips in a UMT or SMT package. UMA1N 1.25 Absolute maximum ratings (Ta = 25 C) 2.1 Parameter Symbol Limits Unit Supply voltage VCC -50 V 0.1Min. -40 Input voltage VIN V ROHM

Transistors Emitter common (dual digital transistors) UMA11N / FMA11A FFeatures FExternal dimensions (Units mm) 1) Two DTA143Z chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silicon transistor (Built-in resistor type) The following characteristics apply to both DTr1 and DTr2. FAbsolute maximum ratings (Ta = 25_C)

UMA10N / FMA10A Transistors General purpose (dual digital transistors) UMA10N / FMA10A External dimensions (Units mm) Features 1) Two DTA113Z chips in a UMT package. UMA10N 1.25 Equivalent circuits 2.1 UMA10N FMA10A (3) (2) (1) (3) (4) (5) 0.1Min. R1 R1 R1 R1 R2 R2 R2 R2 ROHM UMT5 EIAJ SC-88A Each lead has same dimensions (4) (6) (2) (1) JEDEC SOT-353 FMA10A Abs

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

May 2006 FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maxi

UMA11N dual digital transistors (PNP+ PNP) SOT-353 FEATURES Two DTA143Z chips in a package Mounting cost and area can be cut in half Marking A11 1 Equivalent circuit Absolute maximum ratings (Ta=25 ) Symbol Parameter Value Units VCC Supply Voltage -50 V IC(MAX) Output Current -100 mA Vi Input Voltage -30 to +5 V PD Power Dissipation 150 mW TJ Junction Temperatu

N N-CHANNEL IGBT R IGBT JT050N120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CES Vcesat_typ 1.80V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Technology FS

IGBT IGBT Modules R IGBT JT075K120F2MA1E MAIN CHARACTERISTICS Package IC 75 A 1200 V V CES Vcesat_typ 1.9V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techno

IGBT IGBT Modules R IGBT JT075N120F2MA1E MAIN CHARACTERISTICS Package IC 75 A 1200 V V CES Vcesat_typ 1.9V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techno

IGBT IGBT Modules R IGBT JT100K120F2MA1E MAIN CHARACTERISTICS Package IC 100 A 1200 V V CES Vcesat_typ 1.9V Vge=15V APPLICATIONS UPS UPS System Welding FEATURES FS Technology FS Low saturation voltage

IGBT IGBT Modules R IGBT JT150N120F2MA1E MAIN CHARACTERISTICS Package IC 150 A 1200 V V CES Vcesat_typ 1.8V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techn

CHENMKO ENTERPRISE CO.,LTD CHUMA1GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88A/SOT-353) SC-88A/SOT353 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu

CHENMKO ENTERPRISE CO.,LTD CHFMA10GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74A) SC-74A * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabili

CHENMKO ENTERPRISE CO.,LTD CHEMA11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation curren

CHENMKO ENTERPRISE CO.,LTD CHUMA11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88A/SOT-353) SC-88A/SOT353 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c

CHENMKO ENTERPRISE CO.,LTD CHUMA10GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88A/SOT-353) SC-88A/SOT353 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c

CHENMKO ENTERPRISE CO.,LTD CHFMA11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74A) SC-74A * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabili

PMA1516 PNP SILICON TRIPLE DIFFUSED TRANSISTOR designed for power amplifier applications. FEATURE High Collector Voltage VCEO= -180V (Min.) Complementary to PMC3907 Recommend for 80W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value Unit Collector Base Voltage VCBO -180 V Collector Emitter Voltage

PMA1302 PNP SILICON TRIPLE DIFFUSED TRANSISTOR designed for power amplifier applications. TO-3PL MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value Unit Collector Base Voltage VCBO -200 V Collector Emitter Voltage VCEO -200 V Emitter Base Voltage VEBO -5 V Collector Current IC -15 A Base Current IB -1.5 A Collector power Dissipation Tc= 25 C PC 150 W Junction Tempe

TMA10N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N60H TO-220F A10N60H Abs

TMA12N50H Wuxi Unigroup Microelectronics Company 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA12N50H TO-220F A12N50H Abs

TMA10N65H, TMP10N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N65H TO-220F A1

TMA12N65H, TMP12N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA12N65H TO-220F A1

TMA10N80H Wuxi Unigroup Microelectronics Company 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N80H TO-220F A10N80H Abs