MA4104
Datasheet, Equivalent, Cross Reference Search
Type Designator: MA4104
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Emitter Voltage |Vce|: 25
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 150
MHz
Collector Capacitance (Cc): 5
pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package:
TO18
MA4104
Transistor Equivalent Substitute - Cross-Reference Search
MA4104
Datasheet (PDF)
9.1. Size:222K fairchild semi
fdma410nz.pdf 
April 2009FDMA410NZSingle N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 Aoptimize the rDS(ON) @ VGS = 1.5 V on special M
9.2. Size:332K analog power
ama410n.pdf
Analog Power AMA410NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)92 @ VGS = 10V4.7 Low thermal impedance 10099 @ VGS = 4.5V4.5 Fast switching speed DFN2X2 Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA
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