MA4104 Specs and Replacement
Type Designator: MA4104
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO18
MA4104 Substitution
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MA4104 datasheet
April 2009 FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 A optimize the rDS(ON) @ VGS = 1.5 V on special M... See More ⇒
Analog Power AMA410N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 92 @ VGS = 10V 4.7 Low thermal impedance 100 99 @ VGS = 4.5V 4.5 Fast switching speed DFN2X2 Typical Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA... See More ⇒
Detailed specifications: MA393B, MA393C, MA393E, MA393G, MA393R, MA4101, MA4102, MA4103, 13007, MA4404, MA4404A, MA6001, MA6002, MA6003, MA6101, MA6102, MA8001
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