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MD1130 PDF Specs and Replacement

   Type Designator: MD1130
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

   Transition Frequency (ft): 280 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO77
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