MF1162 Datasheet. Specs and Replacement
Type Designator: MF1162 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO72
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MF1162 datasheet
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Detailed specifications: ME8002, ME8003, ME9001, ME9002, ME9003, ME9021, ME9022, MF1161, 2SC1815, MF1163, MF1164, MF3304, MG100G1FL1, MG100H1AL2, MG100H2DL1, MG15G1AL3, MG15G6EL1
Keywords - MF1162 pdf specs
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BJT Parameters and How They Relate
History: AM83135-040 | UMB2N | PBLS4003V
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