All Transistors. MG100G1FL1 Datasheet

 

MG100G1FL1 Datasheet and Replacement


   Type Designator: MG100G1FL1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 600 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 100 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1000 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: X99
 

 MG100G1FL1 Substitution

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MG100G1FL1 Datasheet (PDF)

 9.1. Size:114K  toshiba
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MG100G1FL1

 9.2. Size:249K  toshiba
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MG100G1FL1

 9.3. Size:137K  toshiba
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MG100G1FL1

 9.4. Size:137K  toshiba
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MG100G1FL1

Datasheet: ME9003 , ME9021 , ME9022 , MF1161 , MF1162 , MF1163 , MF1164 , MF3304 , BC546 , MG100H1AL2 , MG100H2DL1 , MG15G1AL3 , MG15G6EL1 , MG200H1AL1 , MG30G1BL2 , MG30G2CL3 , MG50G1BL2 .

History: MJ4237 | SDTC114EET1G | STC401L | BUL49DFP | D41DU14 | 40543 | 2SC1449M

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