MG100G1FL1 PDF and Equivalents Search

 

MG100G1FL1 Specs and Replacement

Type Designator: MG100G1FL1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 600 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 100 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 1000 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: X99

 MG100G1FL1 Substitution

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MG100G1FL1 datasheet

 9.1. Size:114K  toshiba

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MG100G1FL1

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 9.2. Size:249K  toshiba

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 9.3. Size:137K  toshiba

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 9.4. Size:137K  toshiba

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Detailed specifications: ME9003, ME9021, ME9022, MF1161, MF1162, MF1163, MF1164, MF3304, 2SA1837, MG100H1AL2, MG100H2DL1, MG15G1AL3, MG15G6EL1, MG200H1AL1, MG30G1BL2, MG30G2CL3, MG50G1BL2

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