All Transistors. MG100G1FL1 Datasheet

 

MG100G1FL1 Datasheet and Replacement


   Type Designator: MG100G1FL1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 600 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 100 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1000 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: X99
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MG100G1FL1 Datasheet (PDF)

 9.1. Size:114K  toshiba
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MG100G1FL1

 9.2. Size:249K  toshiba
mg100q2ys42.pdf pdf_icon

MG100G1FL1

 9.3. Size:137K  toshiba
mg100q2ys51.pdf pdf_icon

MG100G1FL1

 9.4. Size:137K  toshiba
mg100q2ys50.pdf pdf_icon

MG100G1FL1

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC3431 | 2SD728 | 2SB166 | CV7063 | OC65N | 40543 | 2SC1738

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