MG200H1AL1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MG200H1AL1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 800 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 550 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 200 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 1000 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: X99
MG200H1AL1 Transistor Equivalent Substitute - Cross-Reference Search
MG200H1AL1 Datasheet (PDF)
mmg200hb060h6en.pdf
MMG200HB060H6EN 600V 200A IGBT Module March 2012 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switching a
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MMG200HB060B6EN600V 200A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP
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mg200hf12mic2.pdf
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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
