MG30G1BL2 Datasheet. Specs and Replacement
Type Designator: MG30G1BL2 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: X99
📄📄 Copy
MG30G1BL2 Substitution
- BJT ⓘ Cross-Reference Search
MG30G1BL2 datasheet
NO PDF data!
Detailed specifications: MF1164, MF3304, MG100G1FL1, MG100H1AL2, MG100H2DL1, MG15G1AL3, MG15G6EL1, MG200H1AL1, TIP31, MG30G2CL3, MG50G1BL2, MG50G2CL3, MG75H2DL1, MGT108A, MGT108B, MGT108D, MGT108G
Keywords - MG30G1BL2 pdf specs
MG30G1BL2 cross reference
MG30G1BL2 equivalent finder
MG30G1BL2 pdf lookup
MG30G1BL2 substitution
MG30G1BL2 replacement
BJT Parameters and How They Relate
History: MG200H1AL1
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
c5200 2sc5200 transistor datasheet | d2390 datasheet | 2sa750 replacement | 2sc984 replacement | a1046 transistor | hy19p03 | 2sk2749 | c2577 transistor
