MJ10202 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ10202
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 500 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 200 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 4000 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: SPECIAL
MJ10202 Transistor Equivalent Substitute - Cross-Reference Search
MJ10202 Datasheet (PDF)
fdmj1023pz.pdf
August 2007FDMJ1023PZtmDual P-Channel PowerTrench MOSFET 20V, 2.9A, 112mFeatures General Description Max rDS(on) = 112m at VGS = 4.5V, ID = 2.9AThis dual P-Channel MOSFET uses Fairchilds advanced low voltage PowerTrench process. This device is designed Max rDS(on) = 160m at VGS = 2.5V, ID = 2.4Aspecifically as a single package solution for
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 3DD13003_S1D | 2SC2706 | 2SC2675 | 2SC2740
History: 3DD13003_S1D | 2SC2706 | 2SC2675 | 2SC2740
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050