All Transistors. MJ10202 Datasheet

 

MJ10202 Datasheet and Replacement


   Type Designator: MJ10202
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 500 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 200 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 4000 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: SPECIAL
 

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MJ10202 Datasheet (PDF)

 9.1. Size:328K  fairchild semi
 fdmj1023pz.pdf pdf_icon

MJ10202

August 2007FDMJ1023PZtmDual P-Channel PowerTrench MOSFET 20V, 2.9A, 112mFeatures General Description Max rDS(on) = 112m at VGS = 4.5V, ID = 2.9AThis dual P-Channel MOSFET uses Fairchilds advanced low voltage PowerTrench process. This device is designed Max rDS(on) = 160m at VGS = 2.5V, ID = 2.4Aspecifically as a single package solution for

Datasheet: MJ10052 , MJ100BD45 , MJ100BK100 , MJ10100 , MJ10101 , MJ10102 , MJ10200 , MJ10201 , TIP35C , MJ105 , MJ11011 , MJ11012 , MJ11013 , MJ11014 , MJ11015 , MJ11016 , MJ11017 .

History: BD949F

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