2N4261 Specs and Replacement
Type Designator: 2N4261
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2000 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO72
2N4261 Substitution
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2N4261 datasheet
Data Sheet No. 2N4261 Generic Part Number Type 2N4261 2N4261 Geometry 0014 Polarity PNP REF MIL-PRF-19500/511 Qual Level JAN - JANS Features Fast switching small signal silicon transistor. Housed in a TO-72 case. Also available in chip form using the 0014 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/511 which Semicoa meets in all cases. ... See More ⇒
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN 2N4261UBC * JANTX JANTXV * Avail... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4264/D General Purpose Transistor NPN Silicon 2N4264 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 15 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector Current Cont... See More ⇒
Detailed specifications: 2N4257, 2N4257A, 2N4258, 2N4258A, 2N4259, 2N426, 2N4260, 2N4260UB, 2SD1047, 2N4261UB, 2N4262, 2N4263, 2N4264, 2N4265, 2N4266, 2N4269, 2N4269S
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