MJ13015 Specs and Replacement
Type Designator: MJ13015
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 375 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
MJ13015 datasheet
9.3. Size:207K inchange semiconductor
mj13070 mj13071.pdf 
isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13070 CEO(SUS) = 450V(Min) MJ13071 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.... See More ⇒
9.4. Size:208K inchange semiconductor
mj13090 mj13091.pdf
isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13090 CEO(SUS) = 450V(Min) MJ13091 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.... See More ⇒
9.5. Size:137K inchange semiconductor
mj13070 13071.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min) MJ13070 = 450V(Min) MJ13071 High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su... See More ⇒
9.6. Size:187K inchange semiconductor
mj13090 13091.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min) MJ13090 = 450V(Min) MJ13091 High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su... See More ⇒
9.7. Size:137K inchange semiconductor
mj13080 13081.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min) MJ13080 = 450V(Min) MJ13081 High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su... See More ⇒
9.8. Size:207K inchange semiconductor
mj13080 mj13081.pdf
isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13080 CEO(SUS) = 450V(Min) MJ13081 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.... See More ⇒
Detailed specifications: MJ12004, MJ12005, MJ1201, MJ12010, MJ12020, MJ12021, MJ12022, MJ13014, D965, MJ13070, MJ13071, MJ13080, MJ13081, MJ13090, MJ13091, MJ13100, MJ13101
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