All Transistors. MJ13080 Datasheet

 

MJ13080 Datasheet and Replacement


   Type Designator: MJ13080
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 650 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3
 

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MJ13080 Datasheet (PDF)

 ..1. Size:137K  inchange semiconductor
mj13080 13081.pdf pdf_icon

MJ13080

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13080 = 450V(Min)MJ13081 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su

 ..2. Size:207K  inchange semiconductor
mj13080 mj13081.pdf pdf_icon

MJ13080

isc Silicon NPN Power Transistors MJ13080/13081DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13080CEO(SUS)= 450V(Min)MJ13081High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.

 9.1. Size:82K  njs
mj13009.pdf pdf_icon

MJ13080

 9.2. Size:33K  no
mj13001a.pdf pdf_icon

MJ13080

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BDW63 | HIT5610 | 2SA1307O

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