MJ13081 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

MJ13081 Datasheet. Specs and Replacement

Type Designator: MJ13081 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 750 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

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MJ13081 datasheet

..1. Size:207K inchange semiconductor

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isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13080 CEO(SUS) = 450V(Min) MJ13081 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.... See More ⇒

8.1. Size:137K inchange semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min) MJ13080 = 450V(Min) MJ13081 High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su... See More ⇒

9.1. Size:82K njs

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