MJ13091 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ13091
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 750 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO3
MJ13091 Transistor Equivalent Substitute - Cross-Reference Search
MJ13091 Datasheet (PDF)
mj13090 mj13091.pdf
isc Silicon NPN Power Transistors MJ13090/13091DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13090CEO(SUS)= 450V(Min)MJ13091High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.
mj13090 13091.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13090 = 450V(Min)MJ13091 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su
mj13070 mj13071.pdf
isc Silicon NPN Power Transistors MJ13070/13071DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13070CEO(SUS)= 450V(Min)MJ13071High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.
mj13070 13071.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13070 = 450V(Min)MJ13071 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su
mj13080 13081.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13080 = 450V(Min)MJ13081 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su
mj13080 mj13081.pdf
isc Silicon NPN Power Transistors MJ13080/13081DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13080CEO(SUS)= 450V(Min)MJ13081High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
