All Transistors. MJ13332 Datasheet

 

MJ13332 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJ13332

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 650 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Collector Capacitance (Cc): 500 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

MJ13332 Transistor Equivalent Substitute - Cross-Reference Search

 

MJ13332 Datasheet (PDF)

1.1. mj13332.pdf Size:175K _inchange_semiconductor

MJ13332
MJ13332

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13332 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode application

4.1. mj13333r.pdf Size:278K _motorola

MJ13332
MJ13332

Order this document MOTOROLA by MJ13333/D SEMICONDUCTOR TECHNICAL DATA MJ13333 Designer's? Data Sheet SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor NPN SILICON POWER TRANSISTORS The MJ13333 transistor is designed for high voltage, highspeed, power switching 400500 VOLTS in inductive circuits where fall time is critical. It is particularly suited for line operated 175 WAT

4.2. mj13333.pdf Size:262K _inchange_semiconductor

MJ13332
MJ13332

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13333 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switchmode applications

4.3. mj13335.pdf Size:262K _inchange_semiconductor

MJ13332
MJ13332

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13335 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switchmode applications

4.4. mj13330.pdf Size:175K _inchange_semiconductor

MJ13332
MJ13332

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13330 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode application

4.5. mj13334.pdf Size:262K _inchange_semiconductor

MJ13332
MJ13332

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13334 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switchmode applications

4.6. mj13331.pdf Size:175K _inchange_semiconductor

MJ13332
MJ13332

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13331 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode application

Datasheet: MJ13080 , MJ13081 , MJ13090 , MJ13091 , MJ13100 , MJ13101 , MJ13330 , MJ13331 , 2N3866 , MJ13333 , MJ13334 , MJ13335 , MJ14000 , MJ14001 , MJ14002 , MJ14003 , MJ15001 .

 


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