MJ13332 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ13332
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
MJ13332 Transistor Equivalent Substitute - Cross-Reference Search
MJ13332 Datasheet (PDF)
mj13332.pdf
isc Silicon NPN Power Transistor MJ13332DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
mj13333r.pdf
Order this documentMOTOROLAby MJ13333/DSEMICONDUCTOR TECHNICAL DATAMJ13333Designer's Data SheetSWITCHMODE Series20 AMPERENPN Silicon Power TransistorNPN SILICONPOWER TRANSISTORSThe MJ13333 transistor is designed for high voltage, highspeed, power switching400500 VOLTSin inductive circuits where fall time is critical. It is particularly suited for line operated
mj13335.pdf
isc Silicon NPN Power Transistor MJ13335DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSY
mj13334.pdf
isc Silicon NPN Power Transistor MJ13334DESCRIPTIONLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifiers ,low frequencyswitching and motor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
mj13330.pdf
isc Silicon NPN Power Transistor MJ13330DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
mj13331.pdf
isc Silicon NPN Power Transistor MJ13331DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
mj13333.pdf
isc Silicon NPN Power Transistor MJ13333DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS) Reversed Biased SOA with Inductive LoadsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection CircuitsABSOLUTE
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
