MJ15001 Datasheet. Specs and Replacement
Type Designator: MJ15001 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 1000 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
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MJ15001 datasheet
..1. Size:159K onsemi
mj15001 mj15002.pdf 
MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. http //onsemi.com Features 20 AMPERE High Safe Operating Area POWER TRANSISTORS For Low Distortion Complementary Designs COMPLEMENTARY SILICON High DC Current Gain Thes... See More ⇒
..2. Size:205K inchange semiconductor
mj15001.pdf
isc Silicon NPN Power Transistor MJ15001 DESCRIPTION High DC Current Gain Wide Area of Safe Operation Complement to the PNP MJ15002 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
0.1. Size:165K motorola
mj15001r.pdf
Order this document MOTOROLA by MJ15001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ15001 Complementary Silicon Power PNP MJ15002 Transistors The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. High Safe Operating Area (100% Tested) 15 AMPERE 200 W @ 40 V POWER TRANSISTORS 50 W @ 100 V COMPLEMEN... See More ⇒
0.2. Size:151K onsemi
mj15001g.pdf
MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. http //onsemi.com Features 20 AMPERE High Safe Operating Area (100% Tested) - 5.0 A @ 40 V 0.5 A @ 100 V POWER TRANSISTORS For Low Distortion Complementary Designs COMPLEMENTARY... See More ⇒
8.1. Size:119K motorola
mj15003r.pdf
Order this document MOTOROLA by MJ15003/D SEMICONDUCTOR TECHNICAL DATA NPN MJ15003* Complementary Silicon Power PNP MJ15004* Transistors The MJ15003 and MJ15004 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. High Safe Operating Area (100% Tested) 20 AMPERE 250 W @ 50 V POWER TRA... See More ⇒
8.2. Size:101K onsemi
mj15003 mj15004.pdf
MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. http //onsemi.com Features 20 AMPERE High Safe Operating Area For Low Distortion Complementary Designs POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON These... See More ⇒
8.3. Size:104K onsemi
mj15004g.pdf
MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear http //onsemi.com applications. Features 20 AMPERE POWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary Designs COMPLEMENTARY SIL... See More ⇒
8.4. Size:104K onsemi
mj15003g.pdf
MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear http //onsemi.com applications. Features 20 AMPERE POWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary Designs COMPLEMENTARY SIL... See More ⇒
8.6. Size:165K cn sptech
mj15003.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJ15003 DESCRIPTION High DC Current Gain- h = 25(Min)@I = 5A FE C Wide Area of Safe Operation Complement to the PNP MJ15004 APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
8.7. Size:205K inchange semiconductor
mj15004.pdf
isc Silicon PNP Power Transistor MJ15004 DESCRIPTION High DC Current Gain- h = 25(Min)@I = -5A FE C Wide Area of Safe Operation Complement to Type MJ15003 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒
8.8. Size:205K inchange semiconductor
mj15002.pdf
isc Silicon PNP Power Transistor MJ15002 DESCRIPTION High DC Current Gain Wide Area of Safe Operation Complement to the NPN MJ15001 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
8.9. Size:205K inchange semiconductor
mj15003.pdf
isc Silicon NPN Power Transistor MJ15003 DESCRIPTION High DC Current Gain- h = 25(Min)@I = 5A FE C Wide Area of Safe Operation Complement to the PNP MJ15004 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
Detailed specifications: MJ13332, MJ13333, MJ13334, MJ13335, MJ14000, MJ14001, MJ14002, MJ14003, D882P, MJ15002, MJ15003, MJ15004, MJ15011, MJ15012, MJ15015, MJ15016, MJ15018
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