MJ15016 Datasheet. Specs and Replacement

Type Designator: MJ15016  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 180 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Collector Capacitance (Cc): 600 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO204AA

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MJ15016 datasheet

 ..1. Size:235K  motorola

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MJ15016

Order this document MOTOROLA by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon 2N3055A High-Power Transistors * MJ15015 . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters, inverters... See More ⇒

 ..2. Size:89K  onsemi

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MJ15016

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http //onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc ... See More ⇒

 ..3. Size:168K  cn sptech

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MJ15016

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJ15016 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20-70@I = -4A,V = -4V FE C CE Collector-Emitter Saturation Voltage- V )= -1.1 V(Max)@ I = -4A CE(sat C Complement to the NPN MJ15015 APPLICATIONS Designed for high power audio, stepping motor and other linear applications, and can als... See More ⇒

 ..4. Size:208K  inchange semiconductor

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MJ15016

isc Silicon PNP Power Transistor MJ15016 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20-70@I = -4A,V = -4V FE C CE Collector-Emitter Saturation Voltage- V )= -1.1 V(Max)@ I = -4A CE(sat C Complement to the NPN MJ15015 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, step... See More ⇒

Detailed specifications: MJ14003, MJ15001, MJ15002, MJ15003, MJ15004, MJ15011, MJ15012, MJ15015, BDT88, MJ15018, MJ15019, MJ15020, MJ15021, MJ15022, MJ15023, MJ15024, MJ15025

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