All Transistors. MJ15016 Datasheet

 

MJ15016 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJ15016
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 180 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Collector Capacitance (Cc): 600 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO204AA

 MJ15016 Transistor Equivalent Substitute - Cross-Reference Search

   

MJ15016 Datasheet (PDF)

 ..1. Size:235K  motorola
2n3055a mj2955a mj15015 mj15016.pdf

MJ15016
MJ15016

Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed for high power audio, steppingmotor and other linear applications. These devices can also be used in powerswitching circuits such as relay or solenoid drivers, dctodc converters, inverters

 ..2. Size:89K  onsemi
2n3055a mj15015 mj15016.pdf

MJ15016
MJ15016

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

 ..3. Size:168K  cn sptech
mj15016.pdf

MJ15016
MJ15016

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJ15016DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = -4A,V = -4VFE C CECollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15015APPLICATIONSDesigned for high power audio, stepping motor and otherlinear applications, and can als

 ..4. Size:208K  inchange semiconductor
mj15016.pdf

MJ15016
MJ15016

isc Silicon PNP Power Transistor MJ15016DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = -4A,V = -4VFE C CECollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15015Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, step

 0.1. Size:181K  onsemi
2n3055ag mj15015g mj15016g.pdf

MJ15016
MJ15016

2N3055AG (NPN),MJ15015G (NPN),MJ15016G (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBase complementary transistors are designed for highpower audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orCOMPLEMENTARY SILICONsolenoid drivers, dc-to-dc converters, invert

 0.2. Size:89K  onsemi
mj15016g.pdf

MJ15016
MJ15016

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

 8.1. Size:129K  motorola
mj15011r.pdf

MJ15016
MJ15016

Order this documentMOTOROLAby MJ15011/DSEMICONDUCTOR TECHNICAL DATANPNMJ15011*Advance InformationPNPMJ15012*Complementary Silicon PowerTransistors*Motorola Preferred DeviceThe MJ15011 and MJ15012 are PowerBase power transistors designed for10 AMPEREhighpower audio, disk head positioners, and other linear applications. These devicesCOMPLEMENTARYcan also be used

 8.2. Size:135K  motorola
mj15018r.pdf

MJ15016
MJ15016

Order this documentMOTOROLAby MJ15018/DSEMICONDUCTOR TECHNICAL DATAMJ15015, MJ15016(See 2N3055A)NPNAdvance InformationMJ15018Complementary Silicon PowerMJ15020*TransistorsPNP. . . designed for use as high frequency drivers in Audio Amplifiers.MJ15019 High Gain Complementary Silicon Power Transistors Safe Operating Area 100% TestedMJ15021*50 V, 3.0 A, 1.

 8.3. Size:61K  onsemi
mj15011 mj15012.pdf

MJ15016
MJ15016

MJ15011 (NPN),MJ15012 (PNP)Preferred DevicesComplementary SiliconPower TransistorsThe MJ15011 and MJ15012 are PowerBase power transistorsdesigned for high-power audio, disk head positioners, and other linearhttp://onsemi.comapplications. These devices can also be used in power switchingcircuits such as relay or solenoid drivers, dc-to-dc converters or 10 AMPEREinverters.CO

 8.4. Size:89K  onsemi
mj15015g.pdf

MJ15016
MJ15016

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

 8.5. Size:193K  mospec
mj15015-16 2n3055a mj2955a.pdf

MJ15016
MJ15016

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 8.6. Size:207K  inchange semiconductor
mj15012.pdf

MJ15016
MJ15016

isc Silicon PNP Power Transistor MJ15012DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20(Min.)@I = -2AFE CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head pos

 8.7. Size:207K  inchange semiconductor
mj15011.pdf

MJ15016
MJ15016

isc Silicon NPN Power Transistor MJ15011DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 2.5V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positi

 8.8. Size:208K  inchange semiconductor
mj15015.pdf

MJ15016
MJ15016

isc Silicon NPN Power Transistor MJ15015DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = 4A,V = 4VFE C CECollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, stepping

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: FC4228A | BSV33M

 

 
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