MJ15027 Datasheet. Specs and Replacement

Type Designator: MJ15027  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 500 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

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MJ15027 datasheet

 ..1. Size:204K  inchange semiconductor

mj15027.pdf pdf_icon

MJ15027

isc Silicon PNP Power Transistor MJ15027 DESCRIPTION High current capability High power dissipation Complement to the NPN MJ15026 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier DC to DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒

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MJ15027

MJ15023 (PNP), MJ15025 (PNP) Silicon Power Transistors The MJ15023 and MJ15025 are power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area 16 AMPERES High DC Current Gain SILICON POWER TRANSISTORS Complementary to MJ15022 (NPN), MJ15024 (NPN) 200 - 250 VOLTS, 250 WATTS T... See More ⇒

Detailed specifications: MJ15019, MJ15020, MJ15021, MJ15022, MJ15023, MJ15024, MJ15025, MJ15026, C945, MJ150BK100, MJ16002, MJ16002A, MJ16004, MJ16006, MJ16006A, MJ16008, MJ16010

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