MJ15027 Datasheet and Replacement

isc Silicon PNP Power Transistor MJ15027DESCRIPTIONHigh current capabilityHigh power dissipationComplement to the NPN MJ15026100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifierDC to DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

Order this documentMOTOROLAby MJ15023/DSEMICONDUCTOR TECHNICAL DATAPNPMJ15023MJ15025 *Silicon Power TransistorsThe MJ15023 and MJ15025 are PowerBase power transistors designed for high*Motorola Preferred Devicepower audio, disk head positioners and other linear applications.16 AMPERE High Safe Operating Area (100% Tested) SILICON2 A @ 80 VPOWER TRANSISTORS

Order this documentMOTOROLAby MJ15022/DSEMICONDUCTOR TECHNICAL DATANPNMJ15022MJ15024 *Silicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistors designed for high*Motorola Preferred Devicepower audio, disk head positioners and other linear applications.16 AMPERE High Safe Operating Area (100% Tested) SILICON2 A @ 80 VPOWER TRANSISTORS

MJ15023 (PNP),MJ15025 (PNP)Silicon Power TransistorsThe MJ15023 and MJ15025 are power transistors designed for highpower audio, disk head positioners and other linear applications.Features http://onsemi.com High Safe Operating Area16 AMPERES High DC Current GainSILICON POWER TRANSISTORS Complementary to MJ15022 (NPN), MJ15024 (NPN)200 - 250 VOLTS, 250 WATTS T

NPN - MJ15022, MJ15024**MJ15024 is a Preferred DeviceSilicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Pack

PNP - MJ15023, MJ15025**MJ15025 is a Preferred DeviceSilicon Power TransistorsThe MJ15023 and MJ15025 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Packa

NPN - MJ15022, MJ15024**MJ15024 is a Preferred DeviceSilicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Pack

MJ15022 (NPN),MJ15024 (NPN)Silicon Power TransistorsThe MJ15022 and MJ15024 are power transistors designed for highpower audio, disk head positioners and other linear applications.Features http://onsemi.com High Safe Operating Area High DC Current Gain 16 AMPERES These Devices are Pb-Free and are RoHS Compliant* SILICON POWER TRANSISTORS200 - 250 VOLTS, 250 WATTS

PNP - MJ15023, MJ15025**MJ15025 is a Preferred DeviceSilicon Power TransistorsThe MJ15023 and MJ15025 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Packa

MJ15026 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER TO-3 High Current Capability High Power Dissipation Complementary to MJ15027ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 200 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 16 A Collector

Product Specification www.jmnic.com Silicon PNP Power Transistors MJE15029 DESCRIPTION With TO-220C package Complement to type MJE15028 High transition frequency DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS Designed for use as highfrequency drivers in audio amplifiers. PINNING PIN DES

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE15028 DESCRIPTION With TO-220C package Complement to type MJE15029 High transition frequency DC current gain specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS Designed for use as highfrequency drivers in audio amplifiers. PINNING PIN DESCR

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ15022 MJ15024 DESCRIPTION With TO-3 package Complement to type MJ15023 MJ15025 Excellent Safe Operating Area High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION1 Bas

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJ15026DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25(Min.)@I = 5AFE CCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 5ACE(sat CComplement to the PNP MJ15027APPLICATIONSDesigned for high power audio, disk head positioners , andother linear applications.ABSOLUTE MAXI

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITMJ15022 350V Collector-Base Voltag

Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15023 MJ15025 DESCRIPTION With TO-3 package Complement to type MJ15022; MJ15024 Excellent safe operating area High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPT

isc Silicon PNP Power Transistors MJ15025DESCRIPTIONComplement to Type NPN MJ15024Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistors MJ15024DESCRIPTIONComplement to Type PNP MJ15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor MJ15026DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25(Min.)@I = 5AFE CCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 5ACE(sat CComplement to the PNP MJ15027Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positi

isc Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARA

isc Silicon PNP Power Transistors MJ15023DESCRIPTIONComplement to Type NPN MJ15022Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE