MJ200AA55 Datasheet and Replacement

   Type Designator: MJ200AA55
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 800 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 200 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1000 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: X99
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