All Transistors. MJ2955SM Datasheet

 

MJ2955SM Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJ2955SM
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 115 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO252

 MJ2955SM Transistor Equivalent Substitute - Cross-Reference Search

   

MJ2955SM Datasheet (PDF)

 8.1. Size:235K  motorola
2n3055a mj2955a mj15015 mj15016.pdf

MJ2955SM
MJ2955SM

Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed for high power audio, steppingmotor and other linear applications. These devices can also be used in powerswitching circuits such as relay or solenoid drivers, dctodc converters, inverters

 8.2. Size:130K  motorola
mj2955-2n3055.pdf

MJ2955SM
MJ2955SM

Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for generalpurpose switching and amplifier applications.*Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P

 8.3. Size:179K  motorola
2n3055 mj2955.pdf

MJ2955SM
MJ2955SM

Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for generalpurpose switching and amplifier applications.*Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P

 8.4. Size:90K  st
2n3055 mj2955 2.pdf

MJ2955SM
MJ2955SM

2N3055MJ2955Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier12DescriptionTO-3The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal schematic d

 8.5. Size:71K  onsemi
mj2955g.pdf

MJ2955SM
MJ2955SM

2N3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Featureshttp://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 AdcPOWER TRANSISTORS Exc

 8.6. Size:70K  onsemi
2n3055 mj2955.pdf

MJ2955SM
MJ2955SM

2N3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Featureshttp://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 AdcPOWER TRANSISTORS Exc

 8.7. Size:193K  mospec
mj15015-16 2n3055a mj2955a.pdf

MJ2955SM
MJ2955SM

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 8.8. Size:330K  cdil
2n3055 mj2955.pdf

MJ2955SM
MJ2955SM

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3055 NPNSILICON PLANAR POWER TRANSISTORSMJ2955 PNPTO-3Metal Can PackageGeneral Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO V100Collector Emitter Voltage VCEO V60Collector Emitter Voltage(RBE=100

 8.9. Size:207K  inchange semiconductor
mj2955a.pdf

MJ2955SM
MJ2955SM

isc Silicon PNP Power Transistors MJ2955ADESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.1V(Max)@ I = -4ACE(sat CComplement to Type 2N3055AMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplif

 8.10. Size:206K  inchange semiconductor
mj2955.pdf

MJ2955SM
MJ2955SM

isc Silicon PNP Power Transistors MJ2955DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.1V(Max)@ I = -4ACE(sat CComplement to Type 2N3055Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifier

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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