MJ411 Specs and Replacement
Type Designator: MJ411
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
MJ411 Substitution
- BJT ⓘ Cross-Reference Search
MJ411 datasheet
isc Silicon NPN Power Transistor MJ411 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 300V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V )= 0.8 V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, converters, regulators and switching circ... See More ⇒
Detailed specifications: MJ4030, MJ4031, MJ4032, MJ4033, MJ4034, MJ4035, MJ410, MJ4101, 2N3904, MJ413, MJ420, MJ4200, MJ4201, MJ420S, MJ421, MJ4210, MJ4211
Keywords - MJ411 pdf specs
MJ411 cross reference
MJ411 equivalent finder
MJ411 pdf lookup
MJ411 substitution
MJ411 replacement
