MJ411 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ411
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
MJ411 Transistor Equivalent Substitute - Cross-Reference Search
MJ411 Datasheet (PDF)
mj411.pdf
isc Silicon NPN Power Transistor MJ411DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 300V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V )= 0.8 V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium to high voltage inverters, converters,regulators and switching circ
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .