All Transistors. 2N4279 Datasheet

 

2N4279 Datasheet and Replacement


   Type Designator: 2N4279
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 170 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 25 V
   Maximum Collector Current |Ic max|: 60 A
   Max. Operating Junction Temperature (Tj): 110 °C
   Transition Frequency (ft): 0.24 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO3
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2N4279 Datasheet (PDF)

 9.1. Size:170K  inchange semiconductor
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2N4279

isc Silicon NPN Power Transistor 2N4273DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MMBT4122 | 2SD508 | 2SA1051A | 2SA843 | JE9093 | 2SB464 | 2N1963

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