2N4279 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4279
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 170 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 110 °C
Transition Frequency (ft): 0.24 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO3
2N4279 Transistor Equivalent Substitute - Cross-Reference Search
2N4279 Datasheet (PDF)
9.1. Size:170K inchange semiconductor
2n4273.pdf
2n4273.pdf
isc Silicon NPN Power Transistor 2N4273DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N4272 , 2N4272A , 2N4273 , 2N4274 , 2N4275 , 2N4276 , 2N4277 , 2N4278 , BD135 , 2N428 , 2N4280 , 2N4281 , 2N4282 , 2N4283 , 2N4284 , 2N4285 , 2N4286 .
