All Transistors. MJ6308 Datasheet

 

MJ6308 Datasheet and Replacement


   Type Designator: MJ6308
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 140 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 380 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 250 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3
 

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MJ6308 Datasheet (PDF)

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MJ6308

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ6308 DESCRIPTION 700V Collector-Base Breakdown Capability Excellent Dynamic Saturation Characteristics Fast swithing Low Saturation Voltage Advanced Technology Replacement for the 2N6308 APPLICATIONSDesigned in circuits requiring good dynamio saturation characteristics in swithin

Datasheet: MJ491 , MJ500 , MJ501 , MJ50AC100 , MJ5415 , MJ5416 , MJ6257 , MJ6302 , TIP31 , MJ6502 , MJ6503 , MJ6700 , MJ6701 , MJ7000 , MJ7160 , MJ7161 , MJ7200 .

History: DTA114ES3

Keywords - MJ6308 transistor datasheet

 MJ6308 cross reference
 MJ6308 equivalent finder
 MJ6308 lookup
 MJ6308 substitution
 MJ6308 replacement

 

 
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