2N1105 Specs and Replacement
Type Designator: 2N1105
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 12
Package: TO5
2N1105 Substitution
- BJT ⓘ Cross-Reference Search
2N1105 datasheet
Detailed specifications: 2N1098, 2N1099, 2N110, 2N1100, 2N1101, 2N1102, 2N1103, 2N1104, BD139, 2N1106, 2N1107, 2N1108, 2N1109, 2N111, 2N1110, 2N1111, 2N1111A
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