MJD50-1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJD50-1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO252
MJD50-1 Transistor Equivalent Substitute - Cross-Reference Search
MJD50-1 Datasheet (PDF)
mjd47 mjd50.pdf
Order this documentMOTOROLAby MJD47/DSEMICONDUCTOR TECHNICAL DATAMJD47*MJD50*High Voltage Power Transistors*Motorola Preferred DeviceDPAK For Surface Mount ApplicationsNPN SILICONDesigned for line operated audio output amplifier, switchmode power supply driversPOWER TRANSISTORSand other switching applications.1 AMPERE Lead Formed for Surface Mount Applications in
mjd50.pdf
MJD50HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4) ELECTRICAL SIMILAR TO TIP503APPLICATIONS SWITCH MODE POWER SUPPLIES1 AUDIO AMPLIFIERS GENERAL PURPOSE SWITCHING ANDDPAKAMPLIFIERTO-252(Suffix T4)DESCRIPTIONThe MJD50
mjd47 mjd50.pdf
MJD47/50High Voltage and High Reliability D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP47 and TIP50D-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter
njvmjd47t4g njvmjd50t4g.pdf
MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT
mjd47tf mjd50tf.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mjd47 mjd50.pdf
MJD47, MJD50High Voltage PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for line operated audio output amplifier,SWITCHMODEt power supply drivers and other switchinghttp://onsemi.comapplications.FeaturesNPN SILICON POWER Lead Formed for Surface Mount Applications in Plastic SleevesTRANSISTORS(No Suffix)1 AMPERE Electrically Similar to Popular TIP47
mjd50t4g.pdf
MJD47, NJVMJD47T4G,MJD50High Voltage PowerTransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)1 AMPERE Electrically Similar to Popular
mjd47 njvmjd47t4g mjd50 njvmjd50t4g.pdf
MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT
mjd50g.pdf
MJD47, NJVMJD47T4G,MJD50High Voltage PowerTransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)1 AMPERE Electrically Similar to Popular
mjd50tf.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR RMJD50TF Package MAIN CHARACTERISTICS I 1.0A CV 400V CEOP (DPAK) 15W C DPAK APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply
mjd50.pdf
isc Silicon NPN Power Transistors MJD50DESCRIPTIONDC Current Gain -h = 30~150@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)DPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,switchmodepower supply drivers and
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD2467
