MJE1100 Datasheet. Specs and Replacement

Type Designator: MJE1100  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126

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MJE1100 datasheet

 9.1. Size:116K  motorola

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MJE1100

Order this document MOTOROLA by MJE1123/D SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator PNP LOW DROPOUT TRANSISTOR Transistor 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low dropout linear regulation for switching regulator post regulators, battery powered systems and other applications. The MJE1123 is ... See More ⇒

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MJE1100

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Detailed specifications: MJE103, MJE104, MJE105, MJE105K, MJE1090, MJE1091, MJE1092, MJE1093, 8550, MJE1101, MJE1102, MJE1103, MJE12007, MJE1290, MJE1291, MJE13002, MJE13003

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