All Transistors. MJE13003 Datasheet

 

MJE13003 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJE13003

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 21 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO126

MJE13003 Transistor Equivalent Substitute - Cross-Reference Search

 

MJE13003 Datasheet (PDF)

0.1. mje13003g.pdf Size:107K _onsemi

MJE13003
MJE13003

MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat

0.2. mje13003.pdf Size:107K _onsemi

MJE13003
MJE13003

MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat

 0.3. mje13003d-p.pdf Size:126K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters W

0.4. mje13003k.pdf Size:308K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100C * Inductive switching ma

 0.5. mje13003-p.pdf Size:358K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ Tc=100C *

0.6. mje13003.pdf Size:399K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100C * Indu

0.7. mje13003-e.pdf Size:274K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in highvolatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motorco

0.8. mje13003d.pdf Size:204K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread

0.9. mje13003hv.pdf Size:41K _kec

MJE13003
MJE13003

SEMICONDUCTOR MJE13003HVTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.AHIGH VOLTAGE AND HIGH SPEED BDCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1AHHigh Collector Voltage : VCBO=900V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3

0.10. mje13003.pdf Size:53K _kec

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MJE13003

SEMICONDUCTOR MJE13003TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.ABHIGH VOLTAGE AND HIGH SPEED DCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Max.), at IC=1AS(Max.), tf=0.7HHigh Collector Voltage : VCBO=700V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 1

0.11. mje13003b.pdf Size:178K _wietron

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WEITRONMJE13003BHigh Voltage Fast-switchingCOLLECTOR2.NPN Power TransistorP b Lead(Pb)-Free1. EMITTER3.2. COLLECTORBASE3. BASEDESCRIPTION:1.The device is manufactured using high voltageEMITTERTO-92Multi Epitaxial Planar technology for high switchingspeeds and medium voltage capability.It uses a Cellular Emitter structure with planar edgetermination to enh

0.12. hmje13003.pdf Size:140K _hsmc

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Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-126 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T

0.13. hmje13003e.pdf Size:83K _hsmc

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Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-220 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (

0.14. hmje13003d.pdf Size:51K _hsmc

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Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-126ML Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings

0.15. mje13003br.pdf Size:385K _sisemi

MJE13003
MJE13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BRNPN MJE /MJE SERIES TRANSISTORS MJE13003BRNPN MJE

0.16. mje13003brh.pdf Size:385K _sisemi

MJE13003
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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H)NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H)NPN MJ

0.17. mje13003 2.pdf Size:233K _sisemi

MJE13003
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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE

0.18. mje13003d 1.pdf Size:232K _sisemi

MJE13003
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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

0.19. mje13003b.pdf Size:206K _sisemi

MJE13003
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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BNPN MJE /MJE SERIES TRANSISTORS MJE13003BNPN MJE

0.20. mje13003ht.pdf Size:550K _sisemi

MJE13003
MJE13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ

0.21. mje13003.pdf Size:430K _sisemi

MJE13003
MJE13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE

0.22. mje13003d.pdf Size:477K _sisemi

MJE13003
MJE13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

0.23. mje13003ht 1.pdf Size:212K _sisemi

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ

0.24. mje13003vk1.pdf Size:418K _blue-rocket-elect

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MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore

0.25. mje13003i5.pdf Size:830K _blue-rocket-elect

MJE13003
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MJE13003I5(BR3DD13003I5Q) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High

0.26. mje13003vk7.pdf Size:446K _blue-rocket-elect

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MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V

0.27. mje13003i.pdf Size:205K _first_silicon

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MJE13003

SEMICONDUCTORMJE13003ITECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.DIM MILLIMETERSA 2.20 0.2B 1.50 0.15FEATURESc 0.5 0.07Excellent Switching TimesD 6.50 0.151 2 3: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0A e 2.30 typL 7.70 0.2High Collector Voltage : VCBO=700V.A1 1.20 0.05b1 0.8 0.1

0.28. mje13003 to126.pdf Size:98K _first_silicon

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SEMICONDUCTOR MJE13003TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.TO-126 FEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5A1.BASEHigh Collector Voltage : VCBO=700V.2.COLLECTOR 3.EMITTERMAXIMUM RATING (Ta=25C) 1 2 3 CHARACTERISTIC SYMBOL RATING UNITVC

0.29. mje13003t.pdf Size:169K _first_silicon

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MJE13003

SEMICONDUCTORMJE13003TTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.DFEATURESEAExcellent Switching Times: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5A CF GDIM MILLIMETERSHigh Collector Voltage : VCBO=700V.BA 8.3 MAXB 11.30.3C 4.15 TYP1 2 3D 3.20.2E 2.00.2H F 2.80.1IG 3.20.1MAXIMUM RA

0.30. mje13003b.pdf Size:77K _first_silicon

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MJE13003

SEMICONDUCTOR MJE13003BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=0.5S(Max.), tf=0.7S(Max.), at IC=1AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_MA

0.31. mje13003d.pdf Size:299K _first_silicon

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MJE13003

SEMICONDUCTORMJE13003DTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.AICJFEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0ADIM MILLIMETERSA 6 50 0 2High Collector Voltage : VCBO=700V.B 5 60 0 2C 5 20 0 2D 1 50 0 2MAXIMUM RATING (Ta=25C)E 2 70 0 2F 2 30 0 1

0.32. mje13003a.pdf Size:97K _first_silicon

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MJE13003

SEMICONDUCTOR MJE13003ATECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_

0.33. mje13003di5.pdf Size:346K _foshan

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MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

0.34. mje13003g6.pdf Size:219K _foshan

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MJE13003

MJE13003G6(3DD13003G6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.35. mje13003dg1.pdf Size:412K _foshan

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MJE13003DG1(3DD13003DG1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.36. mje13003i7.pdf Size:215K _foshan

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MJE13003

MJE13003I7(3DD13003I7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.37. mje13003m3.pdf Size:194K _foshan

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MJE13003

MJE13003M3(3DD13003M3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.38. mje13003vf1.pdf Size:258K _foshan

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MJE13003

MJE13003VF1(3DD13003VF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

0.39. mje13003vg1.pdf Size:237K _foshan

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MJE13003

MJE13003VG1(3DD13003VG1) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE

0.40. mje13003k5.pdf Size:197K _foshan

MJE13003
MJE13003

MJE13003K5(3DD13003K5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.41. mje13003vg5.pdf Size:244K _foshan

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MJE13003VG5(3DD13003VG5) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE

0.42. mje13003f2.pdf Size:193K _foshan

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MJE13003F2(3DD13003F2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.43. mje13003f5.pdf Size:250K _foshan

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MJE13003F5(3DD13003F5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.44. mje13003i6.pdf Size:207K _foshan

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MJE13003I6(3DD13003I6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.45. mje13003di3.pdf Size:302K _foshan

MJE13003
MJE13003

MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

0.46. mje13003ft.pdf Size:216K _foshan

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MJE13003FT(3DD13003FT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.47. mje13003hk5.pdf Size:284K _foshan

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MJE13003

MJE13003HK5(3DD13003HK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.48. mje13003vh1.pdf Size:196K _foshan

MJE13003
MJE13003

MJE13003VH13DD13003VH1 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.

0.49. mje13003hn6.pdf Size:243K _foshan

MJE13003
MJE13003

MJE13003HN6(3DD13003HN6) NPN /SILICON NPN TRANSISTOR : Purpose: For switching power supply and other power switching circuit. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25) 1.25 W CP

0.50. mje13003k8.pdf Size:202K _foshan

MJE13003
MJE13003

MJE13003K8(3DD13003K8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.51. mje13003h6.pdf Size:191K _foshan

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MJE13003H6(3DD13003H6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.52. mje13003m6.pdf Size:189K _foshan

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MJE13003M6(3DD13003M6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.53. mje13003l3.pdf Size:286K _foshan

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MJE13003L3(3DD13003L3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.54. mje13003dk7.pdf Size:244K _foshan

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MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.55. mje13003m1.pdf Size:182K _foshan

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MJE13003M1(3DD13003M1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.56. mje13003dk5.pdf Size:246K _foshan

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MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.57. mje13003j1.pdf Size:273K _foshan

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MJE13003J1(3DD13003J1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.58. mje13003g1.pdf Size:212K _foshan

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MJE13003

MJE13003G1(3DD13003G1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.59. mje13003di1.pdf Size:291K _foshan

MJE13003
MJE13003

MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.60. mje13003i1.pdf Size:200K _foshan

MJE13003
MJE13003

MJE13003I1(3DD13003I1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.61. mje13003f6.pdf Size:200K _foshan

MJE13003
MJE13003

MJE13003F6(3DD13003F6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.62. mje13003vn5.pdf Size:384K _foshan

MJE13003
MJE13003

MJE13003VN5(3DD13003VN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

0.63. mje13003dk1.pdf Size:238K _foshan

MJE13003
MJE13003

MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.64. mje13003l5.pdf Size:283K _foshan

MJE13003
MJE13003

MJE13003L5(3DD13003L5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.65. mje13003n8.pdf Size:258K _foshan

MJE13003
MJE13003

MJE13003N8(3DD13003N8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.66. mje13003lf5.pdf Size:309K _foshan

MJE13003
MJE13003

MJE13003LF5(3DD13003LF5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

0.67. mje13003vh5.pdf Size:203K _foshan

MJE13003
MJE13003

MJE13003VH53DD13003VH5 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.

0.68. mje13003h1.pdf Size:195K _foshan

MJE13003
MJE13003

MJE13003H1(3DD13003H1) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO

0.69. mje13003k7.pdf Size:204K _foshan

MJE13003
MJE13003

MJE13003K7(3DD13003K7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.70. mje13003vk5.pdf Size:232K _foshan

MJE13003
MJE13003

MJE13003VK5(3DD13003VK5) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.

0.71. mje13003g5.pdf Size:219K _foshan

MJE13003
MJE13003

MJE13003G5(3DD13003G5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.72. mje13003l1.pdf Size:277K _foshan

MJE13003
MJE13003

MJE13003L1(3DD13003L1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.73. mje13003lf1.pdf Size:251K _foshan

MJE13003
MJE13003

MJE13003LF1(3DD13003LF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

0.74. mje13003k4.pdf Size:207K _foshan

MJE13003
MJE13003

MJE13003K4(3DD13003K4) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.75. mje13003n5.pdf Size:257K _foshan

MJE13003
MJE13003

MJE13003N5(3DD13003N5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.76. mje13003k3.pdf Size:206K _foshan

MJE13003
MJE13003

MJE13003K3(3DD13003K3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.77. mje13003dk3.pdf Size:238K _foshan

MJE13003
MJE13003

MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.78. mje13003vn7.pdf Size:389K _foshan

MJE13003
MJE13003

MJE13003VN7(3DD13003VN7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

0.79. mje13003f1.pdf Size:192K _foshan

MJE13003
MJE13003

MJE13003F1(3DD13003F1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.80. mje13003vi5.pdf Size:190K _foshan

MJE13003
MJE13003

MJE13003VI53DD13003VI5 NPN /SILICON NPN TRANSISTOR Purpose:High voltage capability,high speed switching,wide SOA. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. /Absolute maximum ratings(Tc=25

0.81. mje13003j1g.pdf Size:274K _foshan

MJE13003
MJE13003

MJE13003J1G(3DD13003J1G) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.82. mje13003h5.pdf Size:189K _foshan

MJE13003
MJE13003

MJE13003H5(3DD13003H5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.83. mje13003vk3.pdf Size:230K _foshan

MJE13003
MJE13003

MJE13003VK3(3DD13003VK3) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.

0.84. mje13003h3.pdf Size:191K _foshan

MJE13003
MJE13003

MJE13003H3(3DD13003H3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.85. mje13003dg5.pdf Size:428K _foshan

MJE13003
MJE13003

MJE13003DG5(3DD13003DG5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700

0.86. mje13003k6.pdf Size:199K _foshan

MJE13003
MJE13003

MJE13003K6(3DD13003K6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.87. mje13003vi1.pdf Size:218K _foshan

MJE13003
MJE13003

MJE13003VI1 3DD13003VI1 NPN /SILICON NPN TRANSISTOR 110V Purpose: Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. Features: High voltage capability,high speed switching,wide SOA. /Absolute maximum ratings(

0.88. mje13003e1.pdf Size:290K _foshan

MJE13003
MJE13003

MJE13003E1(3DD13003E1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.89. mje13003m7.pdf Size:197K _foshan

MJE13003
MJE13003

MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.90. mje13003m8.pdf Size:191K _foshan

MJE13003
MJE13003

MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.91. mje13003m5.pdf Size:187K _foshan

MJE13003
MJE13003

MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 700 VVCEO

0.92. mje13003dn5.pdf Size:261K _foshan

MJE13003
MJE13003

MJE13003DN5(3DD13003DN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.93. mje13003l6.pdf Size:284K _foshan

MJE13003
MJE13003

MJE13003L6(3DD13003L6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.94. mje13003.pdf Size:169K _inchange_semiconductor

MJE13003
MJE13003

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13003 DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;c

0.95. mje13003d.pdf Size:128K _inchange_semiconductor

MJE13003
MJE13003

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 7

0.96. mje13003a.pdf Size:213K _inchange_semiconductor

MJE13003
MJE13003

isc Silicon NPN Power Transistor MJE13003ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 1.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

Datasheet: KT337A , KT337B , KT337V , KT339A , KT339AM , KT339B , KT339BM , KT339D , BD135 , KT339G , KT339GM , KT339V , KT339VM , KT340A , KT340B , KT340D , KT340G .

 

 
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