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MJE13003 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13003

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Capacitancia de salida (Cc): 21 pF

Ganancia de corriente contínua (hfe): 8

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar MJE13003

MJE13003 Datasheet (PDF)

1.1. mje13003vk3.pdf Size:230K _update

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MJE13003

MJE13003VK3(3DD13003VK3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:耐压高,开关速度快,安全工作区宽,符合 RoHS 规范。 Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 特点:适用于 110V 电路、节能灯、电子镇流器。 Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast. 极

1.2. mje13003g6.pdf Size:219K _update

MJE13003
MJE13003

MJE13003G6(3DD13003G6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.3. mje13003hk5.pdf Size:284K _update

MJE13003
MJE13003

MJE13003HK5(3DD13003HK5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

1.4. mje13003di3.pdf Size:302K _update

MJE13003
MJE13003

MJE13003DI3(3DD13003DI3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 800 V

1.5. mje13003m8.pdf Size:191K _update

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MJE13003

MJE13003M8(3DD13003M8) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.6. mje13003hn6.pdf Size:243K _update

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MJE13003

MJE13003HN6(3DD13003HN6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于开关电源等各类功率开关电路。 Purpose: For switching power supply and other power switching circuit. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25℃) 1.25 W C P

1.7. mje13003i7.pdf Size:215K _update

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MJE13003

MJE13003I7(3DD13003I7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.8. mje13003j1.pdf Size:273K _update

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MJE13003

MJE13003J1(3DD13003J1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

1.9. mje13003g5.pdf Size:219K _update

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MJE13003

MJE13003G5(3DD13003G5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.10. mje13003lf1.pdf Size:251K _update

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MJE13003LF1(3DD13003LF1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

1.11. mje13003h3.pdf Size:191K _update

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MJE13003

MJE13003H3(3DD13003H3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.12. mje13003h1.pdf Size:195K _update

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MJE13003

MJE13003H1(3DD13003H1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 600 V VCEO

1.13. mje13003f1.pdf Size:192K _update

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MJE13003

MJE13003F1(3DD13003F1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.14. mje13003ft.pdf Size:216K _update

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MJE13003FT(3DD13003FT) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.15. mje13003dk7.pdf Size:244K _update

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MJE13003DK7(3DD13003DK7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.16. mje13003dg5.pdf Size:428K _update

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MJE13003DG5(3DD13003DG5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700

1.17. mje13003dk1.pdf Size:238K _update

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MJE13003DK1(3DD13003DK1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.18. mje13003l6.pdf Size:284K _update

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MJE13003L6(3DD13003L6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

1.19. mje13003vi1.pdf Size:218K _update

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MJE13003VI1 (3DD13003VI1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:适用于 110V 电路、节能灯、电子镇流器。 Purpose: Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. 特点:耐压高,开关速度快,安全工作区宽。 Features: High voltage capability,high speed switching,wide SOA. 极限参数/Absolute maximum ratings(

1.20. mje13003vn7.pdf Size:389K _update

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MJE13003VN7(3DD13003VN7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

1.21. mje13003m6.pdf Size:189K _update

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MJE13003M6(3DD13003M6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.22. mje13003vk5.pdf Size:232K _update

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MJE13003VK5(3DD13003VK5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:耐压高,开关速度快,安全工作区宽,符合 RoHS 规范。 Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 特点:适用于 110V 电路、节能灯、电子镇流器。 Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast. 极

1.23. mje13003vh5.pdf Size:203K _update

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MJE13003VH5(3DD13003VH5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:耐压高,开关速度快,安全工作区宽,符合 RoHS 规范。 Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 特点:适用于 110V 电路、节能灯、电子镇流器。 Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. 极限参数

1.24. mje13003vk1.pdf Size:418K _update

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MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 适用于 110V 电路、节能灯、电子镇流器。 Suitable for 110V circuit mode, fluore

1.25. mje13003i5.pdf Size:830K _update

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MJE13003I5(BR3DD13003I5Q) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126(R)塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126(R) Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High

1.26. mje13003g1.pdf Size:212K _update

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MJE13003

MJE13003G1(3DD13003G1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.27. mje13003f5.pdf Size:250K _update

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MJE13003F5(3DD13003F5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.28. mje13003f2.pdf Size:193K _update

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MJE13003F2(3DD13003F2) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.29. mje13003k4.pdf Size:207K _update

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MJE13003K4(3DD13003K4) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.30. mje13003n8.pdf Size:258K _update

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MJE13003N8(3DD13003N8) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.31. mje13003vh1.pdf Size:196K _update

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MJE13003VH1(3DD13003VH1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:耐压高,开关速度快,安全工作区宽,符合 RoHS 规范。 Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 特点:适用于 110V 电路、节能灯、电子镇流器。 Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. 极限

1.32. mje13003j1g.pdf Size:274K _update

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MJE13003J1G(3DD13003J1G) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

1.33. mje13003m3.pdf Size:194K _update

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MJE13003

MJE13003M3(3DD13003M3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.34. mje13003l1.pdf Size:277K _update

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MJE13003

MJE13003L1(3DD13003L1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

1.35. mje13003h5.pdf Size:189K _update

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MJE13003

MJE13003H5(3DD13003H5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.36. mje13003m5.pdf Size:187K _update

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MJE13003M5(3DD13003M5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 700 V VCEO

1.37. mje13003vn5.pdf Size:384K _update

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MJE13003

MJE13003VN5(3DD13003VN5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

1.38. mje13003k.pdf Size:308K _update

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UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching ma

1.39. mje13003k8.pdf Size:202K _update

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MJE13003

MJE13003K8(3DD13003K8) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.40. mje13003k6.pdf Size:199K _update

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MJE13003K6(3DD13003K6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.41. mje13003h6.pdf Size:191K _update

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MJE13003

MJE13003H6(3DD13003H6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.42. mje13003vk7.pdf Size:446K _update

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MJE13003

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快,安全工作区宽,符合 RoHS 规范。 High voltage capability, high speed switching, wide soa, RoHS compliant. 用途 / Applications 适用于 110V 电路

1.43. mje13003di1.pdf Size:291K _update

MJE13003
MJE13003

MJE13003DI1(3DD13003DI1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.44. mje13003di5.pdf Size:346K _update

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MJE13003

MJE13003DI5(3DD13003DI5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 800 V

1.45. mje13003e1.pdf Size:290K _update

MJE13003
MJE13003

MJE13003E1(3DD13003E1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.46. mje13003i6.pdf Size:207K _update

MJE13003
MJE13003

MJE13003I6(3DD13003I6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.47. mje13003vg1.pdf Size:237K _update

MJE13003
MJE13003

MJE13003VG1(3DD13003VG1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 400 V VCE

1.48. mje13003g.pdf Size:107K _update

MJE13003
MJE13003

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http://onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat

1.49. mje13003m7.pdf Size:197K _update

MJE13003
MJE13003

MJE13003M7(3DD13003M7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.50. mje13003dg1.pdf Size:412K _update

MJE13003
MJE13003

MJE13003DG1(3DD13003DG1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.51. mje13003l3.pdf Size:286K _update

MJE13003
MJE13003

MJE13003L3(3DD13003L3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

1.52. mje13003k3.pdf Size:206K _update

MJE13003
MJE13003

MJE13003K3(3DD13003K3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.53. mje13003dn5.pdf Size:261K _update

MJE13003
MJE13003

MJE13003DN5(3DD13003DN5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.54. mje13003i1.pdf Size:200K _update

MJE13003
MJE13003

MJE13003I1(3DD13003I1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.55. mje13003k5.pdf Size:197K _update

MJE13003
MJE13003

MJE13003K5(3DD13003K5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.56. mje13003k7.pdf Size:204K _update

MJE13003
MJE13003

MJE13003K7(3DD13003K7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.57. mje13003vg5.pdf Size:244K _update

MJE13003
MJE13003

MJE13003VG5(3DD13003VG5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 400 V VCE

1.58. mje13003n5.pdf Size:257K _update

MJE13003
MJE13003

MJE13003N5(3DD13003N5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.59. mje13003dk3.pdf Size:238K _update

MJE13003
MJE13003

MJE13003DK3(3DD13003DK3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.60. mje13003f6.pdf Size:200K _update

MJE13003
MJE13003

MJE13003F6(3DD13003F6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.61. mje13003lf5.pdf Size:309K _update

MJE13003
MJE13003

MJE13003LF5(3DD13003LF5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

1.62. mje13003m1.pdf Size:182K _update

MJE13003
MJE13003

MJE13003M1(3DD13003M1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

1.63. mje13003vf1.pdf Size:258K _update

MJE13003
MJE13003

MJE13003VF1(3DD13003VF1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

1.64. mje13003l5.pdf Size:283K _update

MJE13003
MJE13003

MJE13003L5(3DD13003L5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

1.65. mje13003vi5.pdf Size:190K _update

MJE13003
MJE13003

MJE13003VI5(3DD13003VI5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:耐压高,开关速度快,安全工作区宽。 Purpose:High voltage capability,high speed switching,wide SOA. 特点:适用于 110V 电路、节能灯、电子镇流器。 Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. 极限参数/Absolute maximum ratings(Tc=25

1.66. mje13003dk5.pdf Size:246K _update

MJE13003
MJE13003

MJE13003DK5(3DD13003DK5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.67. mje13003.pdf Size:107K _onsemi

MJE13003
MJE13003

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http://onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feature

1.68. mje13003-e.pdf Size:274K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control

1.69. mje13003d-p.pdf Size:126K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low

1.70. mje13003d.pdf Size:204K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High

1.71. mje13003.pdf Size:399K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive s

1.72. mje13003-p.pdf Size:358K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Induct

1.73. mje13003.pdf Size:53K _kec

MJE13003
MJE13003

SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B HIGH VOLTAGE AND HIGH SPEED D C SWITCHING APPLICATION. E F FEATURES ·Excellent Switching Times G : ton=1.1? S(Max.), at IC=1A S(Max.), tf=0.7? H ·High Collector Voltage : VCBO=700V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.

1.74. mje13003hv.pdf Size:41K _kec

MJE13003
MJE13003

SEMICONDUCTOR MJE13003HV TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A HIGH VOLTAGE AND HIGH SPEED B D C SWITCHING APPLICATION. E F FEATURES Excellent Switching Times G : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A H High Collector Voltage : VCBO=900V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXI

1.75. mje13003d.pdf Size:128K _inchange_semiconductor

MJE13003
MJE13003

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V

1.76. mje13003.pdf Size:169K _inchange_semiconductor

MJE13003
MJE13003

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter

1.77. mje13003b.pdf Size:178K _wietron

MJE13003
MJE13003

WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION: 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhanc

1.78. hmje13003d.pdf Size:51K _hsmc

MJE13003
MJE13003

Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-126ML • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T

1.79. hmje13003.pdf Size:140K _hsmc

MJE13003
MJE13003

Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-126 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=2

1.80. hmje13003e.pdf Size:83K _hsmc

MJE13003
MJE13003

Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-220 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=

1.81. mje13003br.pdf Size:385K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE 系

1.82. mje13003b.pdf Size:206K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE 系列

1.83. mje13003brh.pdf Size:385K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJ

1.84. mje13003d_1.pdf Size:232K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体

1.85. mje13003_2.pdf Size:233K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 系列

1.86. mje13003d.pdf Size:477K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体

1.87. mje13003ht_1.pdf Size:212K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJ

1.88. mje13003.pdf Size:430K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 系列

1.89. mje13003ht.pdf Size:550K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJ

1.90. mje13003t.pdf Size:169K _first_silicon

MJE13003
MJE13003

SEMICONDUCTOR MJE13003T TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. D FEATURES E A Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A C F G DIM MILLIMETERS High Collector Voltage : VCBO=700V. B A 8.3 MAX B 11.3±0.3 C 4.15 TYP 1 2 3 D 3.2±0.2 E 2.0±0.2 H F 2.8±0.1 I G 3.2±0.1 MAXIMUM RA

1.91. mje13003_to126.pdf Size:98K _first_silicon

MJE13003
MJE13003

SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. TO-126 FEATURES Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A 1.BASE High Collector Voltage : VCBO=700V. 2.COLLECTOR 3.EMITTER MAXIMUM RATING (Ta=25˚C) 1 2 3 CHARACTERISTIC SYMBOL RATING UNIT VC

1.92. mje13003b.pdf Size:77K _first_silicon

MJE13003
MJE13003

SEMICONDUCTOR MJE13003B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=0.5μS(Max.), tf=0.7μS(Max.), at IC=1A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _ MA

1.93. mje13003i.pdf Size:205K _first_silicon

MJE13003
MJE13003

SEMICONDUCTOR MJE13003I TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. DIM MILLIMETERS A 2.20 ± 0.2 B 1.50 ± 0.15 FEATURES c 0.5 ± 0.07 Excellent Switching Times D 6.50 ± 0.15 1 2 3 : ton=1.1μS(Max.), tf=0.5μS(Max.), at IC=1.0A e 2.30 typ L 7.70 ± 0.2 High Collector Voltage : VCBO=700V. A1 1.20 ± 0.05 b1 0.8 ± 0.1

1.94. mje13003d.pdf Size:299K _first_silicon

MJE13003
MJE13003

SEMICONDUCTOR MJE13003D TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. A I C J FEATURES Excellent Switching Times : ton=1.1μS(Max.), tf=0.5μS(Max.), at IC=1.0A DIM MILLIMETERS A 6 50 ± 0 2 High Collector Voltage : VCBO=700V. B 5 60 ± 0 2 C 5 20 ± 0 2 D 1 50 ± 0 2 MAXIMUM RATING (Ta=25˚C) E 2 70 ± 0 2 F 2 30 ± 0 1

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MJE13003
MJE13003

SEMICONDUCTOR MJE13003A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _

Otros transistores... MJE1100 , MJE1101 , MJE1102 , MJE1103 , MJE12007 , MJE1290 , MJE1291 , MJE13002 , TIP41 , MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MJE13009 , MJE13070 .

 


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