All Transistors. MJE13006 Datasheet

 

MJE13006 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJE13006

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 110 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO220

MJE13006 Transistor Equivalent Substitute - Cross-Reference Search

 

MJE13006 Datasheet (PDF)

0.1. mje13006 07.pdf Size:330K _cdil

MJE13006
MJE13006

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORS MJE13006MJE13007TO-220Plastic PackageSwitchmode Series NPN Silicon Power TransistorsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13006 MJE13007 UNITCollector Emitter Sustaining Voltage VCEO (sus) 300 400 VCollector Emitter Voltage VCEV 600 700 VVEBOEmi

7.1. mje13007.pdf Size:337K _motorola

MJE13006
MJE13006

Order this documentMOTOROLAby MJE13007/DSEMICONDUCTOR TECHNICAL DATAMJE13007MJF13007Designer's Data SheetSWITCHMODENPN Bipolar Power TransistorPOWER TRANSISTORFor Switching Power

7.2. mje13002.pdf Size:304K _motorola

MJE13006
MJE13006

Order this documentMOTOROLAby MJE13002/DSEMICONDUCTOR TECHNICAL DATA*MJE13002MJE13003*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series1.5 AMPERENPN SILICONNPN

 7.3. mje13005.pdf Size:311K _motorola

MJE13006
MJE13006

Order this documentMOTOROLAby MJE13005/DSEMICONDUCTOR TECHNICAL DATA*MJE13005*Motorola Preferred DeviceDesigner's Data Sheet4 AMPERESWITCHMODE SeriesNPN SILICONPOWER TRANSISTOR

7.4. mje13009.pdf Size:451K _motorola

MJE13006
MJE13006

Order this documentMOTOROLAby MJE13009/DSEMICONDUCTOR TECHNICAL DATAMJE13009**Motorola Preferred DeviceDesigner's Data Sheet12 AMPERESWITCHMODE SeriesNPN SILICONPOWER TRANSISTOR

 7.5. mje13007.pdf Size:29K _st

MJE13006
MJE13006

MJE13007 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITYAPPLICATIONS SWITCHING REGULATORS MOTOR CONTROLDESCRIPTION32The MJE13007 is a silicon multiepitaxial mesa1NPN power transistor mounted in Jedec TO-220plastic package.TO-220It is are inteded for use in motor control, switchingregulators etc.INTE

7.6. mje13007a.pdf Size:63K _st

MJE13006
MJE13006

MJE13007A SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3The MJE13007A is silicon multiepitaxial mesa 21NPN power transistor mounted in Jedec TO-220plastic package.TO-220They are inteded for use in motor control,switching regulators etc.INTER

7.7. mje13005.pdf Size:60K _st

MJE13006
MJE13006

MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEDESCRIPTION The MJE13005 is a silicon multiepitaxial mesaNPN transistor in Jedec TO-220 plastic packageparticularly intended for switch-modeapplications.321TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV 700 VCEV Collector-Emitter VoltageVCEO Collector-

7.8. mje13009.pdf Size:78K _st

MJE13006
MJE13006

MJE13009SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEDESCRIPTIONThe MJE13009 is a multiepitaxial mesa NPNtransistor. It is mounted in Jedec TO-220 plasticpackage, intended for use in motor controls,switching regulators, deflection circuits, etc.321TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEO Collector-Em

7.9. mje13005.pdf Size:114K _central

MJE13006
MJE13006

DATA SHEETMJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 VCollector-Emitter Voltage VCEV 700 VEmitter-Base Voltage VEBO 9.0 VCo

7.10. mje13004 mje13005.pdf Size:72K _central

MJE13006
MJE13006

DATA SHEETMJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage

7.11. mje13009-d.pdf Size:189K _onsemi

MJE13006
MJE13006

MJE13009GSWITCHMODEt SeriesNPN Silicon PowerTransistorsThe MJE13009G is designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They are http://onsemi.comparticularly suited for 115 and 220 V SWITCHMODE applicationssuch as Switching Regulators, Inverters, Motor Controls,12 AMPERESolenoid/Relay drivers and Deflection circuits.NPN S

7.12. mje13003g.pdf Size:107K _onsemi

MJE13006
MJE13006

MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat

7.13. mje13003.pdf Size:107K _onsemi

MJE13006
MJE13006

MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat

7.14. mje13007-d.pdf Size:194K _onsemi

MJE13006
MJE13006

MJE13007GSWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE13007G is designed for high-voltage, high-speed powerhttp://onsemi.comswitching inductive circuits where fall time is critical. It is particularlysuited for 115 and 220 V SWITCHMODE applications such asSwitching Regulators, Inverters, Motor Controls, Solenoid/Relay POWER TRANSISTORdri

7.15. mje13005g.pdf Size:150K _onsemi

MJE13006
MJE13006

MJE13005GSWITCHMODEt SeriesNPN Silicon PowerTransistorsThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They are http://onsemi.comparticularly suited for 115 and 220 V SWITCHMODE applicationssuch as Switching Regulators, Inverters, Motor Controls,4 AMPERESolenoid/Relay drivers and Deflection circuits.NP

7.16. mje13007g.pdf Size:408K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7

7.17. mje13007.pdf Size:380K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7

7.18. mje13002.pdf Size:278K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in highvolatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motorcontrol

7.19. mje13009-p.pdf Size:424K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speedpower switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls,Sole

7.20. mje13003d-p.pdf Size:126K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters W

7.21. mje13003k.pdf Size:308K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100C * Inductive switching ma

7.22. mje13007-m.pdf Size:351K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage andhigh-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V

7.23. mje13009-k.pdf Size:440K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speedpower switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls,Sole

7.24. mje13003-p.pdf Size:358K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ Tc=100C *

7.25. mje13001-p.pdf Size:191K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B TO-92 B C E Tape Box MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K

7.26. mje13005d-k.pdf Size:115K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in

7.27. mje13002g.pdf Size:303K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in highvolatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motor co

7.28. mje13001.pdf Size:180K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13001L-x-AB3-A -R MJE13001G-x-AB3-A-R SOT-89 E C B Tape Reel MJE13001L-x-AB3-F -R MJE13001G-x-AB3-F

7.29. mje13007d.pdf Size:368K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage,high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 70

7.30. mje13009g.pdf Size:448K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid

7.31. mje13005.pdf Size:412K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100 *

7.32. mje13003.pdf Size:399K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100C * Indu

7.33. mje13003-e.pdf Size:274K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in highvolatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motorco

7.34. mje13003d.pdf Size:204K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread

7.35. mje13005g.pdf Size:475K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100 *

7.36. mje13005d.pdf Size:118K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 11TRANSISTOR TO-220TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1power transistor. It is characterized by high breakdown voltage,1high current capability, high switching speed and high reliability. TO-251 TO-126The UTC

7.37. mje13009.pdf Size:448K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid

7.38. mje13005-k.pdf Size:393K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100

7.39. mje13002-e.pdf Size:276K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in highvolatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motorcon

7.40. mje13009d.pdf Size:183K _utc

MJE13006
MJE13006

UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lig

7.41. mje13002 13003.pdf Size:248K _cdil

MJE13006
MJE13006

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002MJE13003TO-126 Plastic PackageSuitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers andDeflection CircuitsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL MJE13002 MJE13003 UNITVCEO(sus)Collector Emitter Voltage 300

7.42. mje13004 05.pdf Size:273K _cdil

MJE13006
MJE13006

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORS MJE13004MJE13005TO-220Plastic PackageSwitchmode Series NPN Silicon Power TransistorsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13004 MJE13005 UNITCollector Emitter Sustaining Voltage VCEO (sus) 300 400 VCollector Emitter Voltage VCEV 600 700 VVEBOEmi

7.43. mje13007.pdf Size:339K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13007TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.6 S(Max.), at IC=5AS(Max.), tf=0.7High Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Vol

7.44. mje13003hv.pdf Size:41K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13003HVTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.AHIGH VOLTAGE AND HIGH SPEED BDCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1AHHigh Collector Voltage : VCBO=900V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3

7.45. mje13005dc.pdf Size:857K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13005DCTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.Built-in Free wheeling Diode makes efficient anti saturation operation.Suitable for half bridge light ballast Applications.Low base drive requirement.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 VVCEOCollec

7.46. mje13004d.pdf Size:366K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13004DTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.ABDHIGH VOLTAGE AND HIGH SPEED CSWITCHING APPLICATION. EFFEATURESGBuilt-in Free Wheeling DiodeHSuitable for Electrouic Ballast ApplicationDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5MAXIMUM RATING (Ta=25)_+F 11.0 0.3G 2

7.47. mje13009f.pdf Size:280K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13009FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8AHigh Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 V

7.48. mje13007f.pdf Size:351K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13007FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.6 S(Max.), at IC=5AS(Max.), tf=0.7High Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Vo

7.49. mje13005.pdf Size:436K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13005TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FLUORESCENT LIGHT BALLASTOR APPLICATION.FEATURESExcellent Switching Times: ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2AHigh Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING

7.50. mje13003.pdf Size:53K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13003TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.ABHIGH VOLTAGE AND HIGH SPEED DCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Max.), at IC=1AS(Max.), tf=0.7HHigh Collector Voltage : VCBO=700V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 1

7.51. mje13005d.pdf Size:51K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13005DTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ABuilt-in Free wheeling Diode makes efficient anti saturation operation.OCSuitable for half bridge light ballast Applications.FDIM MILLIMETERSLow base drive requirement.E _G A 9.9 + 0.2MAXIMUM RATING (Ta=25 )B 15.95 MAXBC 1.3+0.1/-0.05Q_CHAR

7.52. mje13009.pdf Size:272K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13009TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8AHigh Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 V

7.53. mje13005f.pdf Size:442K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13005FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FLUORESCENT LIGHT BALLASTOR APPLICATION.FEATURESExcellent Switching Times: ton=0.8 S(Max.), at IC=2AS(Max.), tf=0.9High Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25)CHARACTERISTIC S

7.54. mje13005df.pdf Size:375K _kec

MJE13006
MJE13006

SEMICONDUCTOR MJE13005DFTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ACBuilt-in Free wheeling Diode makes efficient anti saturation operation.DIM MILLIMETERSSSuitable for half bridge light ballast Applications._A 10.0 + 0.3_+B 15.0 0.3ELow base drive requirement.C _2.70 0.3+D 0.76+0.09/-0.05MAXIMUM R

7.55. mje13003b.pdf Size:178K _wietron

MJE13006
MJE13006

WEITRONMJE13003BHigh Voltage Fast-switchingCOLLECTOR2.NPN Power TransistorP b Lead(Pb)-Free1. EMITTER3.2. COLLECTORBASE3. BASEDESCRIPTION:1.The device is manufactured using high voltageEMITTERTO-92Multi Epitaxial Planar technology for high switchingspeeds and medium voltage capability.It uses a Cellular Emitter structure with planar edgetermination to enh

7.56. hmje13007a.pdf Size:50K _hsmc

MJE13006
MJE13006

Spec. No. : HE200501 HI-SINCERITY Issued Date : 2005.06.01 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (

7.57. hmje13009a.pdf Size:55K _hsmc

MJE13006
MJE13006

Spec. No. : HE200206HI-SINCERITYIssued Date : 2002.02.01Revised Date : 2006.07.04MICROELECTRONICS CORP.Page No. : 1/6HMJE13009A12 AMPERE NPN SILICON POWER TRANSISTORDescriptionThe HMJE13009A is designed for high-voltage, high-speed power switchinginductive circuits where fall time is critical. They are particularly suited for 115 and220V switch-controls, Solenoid/Relay dri

7.58. hmje13007.pdf Size:50K _hsmc

MJE13006
MJE13006

Spec. No. : HE200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T

7.59. hmje13003.pdf Size:140K _hsmc

MJE13006
MJE13006

Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-126 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T

7.60. hmje13003e.pdf Size:83K _hsmc

MJE13006
MJE13006

Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-220 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (

7.61. hmje13001.pdf Size:46K _hsmc

MJE13006
MJE13006

Spec. No. : HA200213HI-SINCERITYIssued Date : 2002.06.01Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HMJE13001NPN Triple Diffused Planar Type High Voltage TransistorDescriptionThe HMJE13001 is a medium power transistor designed for use in switchingapplications.TO-92Features High breakdown voltage Low collector saturation voltage Fast switch

7.62. hmje13005.pdf Size:52K _hsmc

MJE13006
MJE13006

Spec. No. : HE6741 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description Switch Regulators TO-220 PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T =25C) A Maximum Temperatures Stora

7.63. hmje13003d.pdf Size:51K _hsmc

MJE13006
MJE13006

Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-126ML Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings

7.64. mje13001ah.pdf Size:315K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13001AHNPN MJE /MJE SERIES TRANSISTORS MJE13001AHNPN MJE

7.65. mje13002aht 1.pdf Size:445K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHTNPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHT

7.66. mje13007.pdf Size:234K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007NPN MJE /MJE SERIES TRANSISTORS MJE13007NPN MJE

7.67. mje13002aht.pdf Size:365K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE / MJE SERIES TRANSISTORS MJE13002AHTNPN MJE / MJE SERIES TRANSISTORS MJE13002AHTNPN MJE

7.68. mje13003br.pdf Size:385K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BRNPN MJE /MJE SERIES TRANSISTORS MJE13003BRNPN MJE

7.69. mje13007m.pdf Size:221K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007MNPN MJE /MJE SERIES TRANSISTORS MJE13007MNPN MJE

7.70. mje13003brh.pdf Size:385K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H)NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H)NPN MJ

7.71. mje13007a.pdf Size:256K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007ANPN MJE /MJE SERIES TRANSISTORS MJE13007ANPN MJE

7.72. mje13009a.pdf Size:252K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE

7.73. mje13003 2.pdf Size:233K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE

7.74. mje13003d 1.pdf Size:232K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

7.75. mje13001.pdf Size:388K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13001NPN MJE /MJE SERIES TRANSISTORS MJE13001NPN MJE

7.76. mje13003b.pdf Size:206K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BNPN MJE /MJE SERIES TRANSISTORS MJE13003BNPN MJE

7.77. mje13003ht.pdf Size:550K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ

7.78. mje13005.pdf Size:232K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13005NPN MJE /MJE SERIES TRANSISTORS MJE13005NPN MJE

7.79. mje13005 1.pdf Size:239K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13005NPN MJE /MJE SERIES TRANSISTORS MJE13005NPN MJE

7.80. mje13003.pdf Size:430K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE

7.81. mje13009a 1.pdf Size:207K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE

7.82. mje13003d.pdf Size:477K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

7.83. mje13001h.pdf Size:313K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN BUL / BUL SERIES TRANSISTORS MJE13001HNPN BUL / BUL SERIES TRANSISTORS MJE13001HNPN BUL

7.84. mje13005d.pdf Size:232K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13005DNPN D / D SERIES TRANSISTORS MJE13005DNPN D

7.85. mje13009.pdf Size:206K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009NPN MJE /MJE SERIES TRANSISTORS MJE13009NPN MJE

7.86. mje13003ht 1.pdf Size:212K _sisemi

MJE13006
MJE13006

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ

7.87. mje13005p8.pdf Size:460K _blue-rocket-elect

MJE13006
MJE13006

MJE13005P8(BR3DD13005P8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High fr

7.88. mje13009z8.pdf Size:449K _blue-rocket-elect

MJE13006
MJE13006

MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

7.89. mje13007x7.pdf Size:455K _blue-rocket-elect

MJE13006
MJE13006

MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

7.90. mje13002e1.pdf Size:456K _blue-rocket-elect

MJE13006
MJE13006

MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

7.91. mje13007x9.pdf Size:447K _blue-rocket-elect

MJE13006
MJE13006

MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.

7.92. mje13007hv7.pdf Size:506K _blue-rocket-elect

MJE13006
MJE13006

MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

7.93. mje13003vk1.pdf Size:418K _blue-rocket-elect

MJE13006
MJE13006

MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore

7.94. mje13003i5.pdf Size:830K _blue-rocket-elect

MJE13006
MJE13006

MJE13003I5(BR3DD13003I5Q) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High

7.95. mje13009x8.pdf Size:423K _blue-rocket-elect

MJE13006
MJE13006

MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

7.96. mje13009x7.pdf Size:463K _blue-rocket-elect

MJE13006
MJE13006

MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .

7.97. mje13009x9.pdf Size:445K _blue-rocket-elect

MJE13006
MJE13006

MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

7.98. mje13007v8.pdf Size:439K _blue-rocket-elect

MJE13006
MJE13006

MJE13007V8(BR3DD13007V8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

7.99. mje13002f1.pdf Size:407K _blue-rocket-elect

MJE13006
MJE13006

MJE13002F1(BR3DD13002F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

7.100. mje13003vk7.pdf Size:446K _blue-rocket-elect

MJE13006
MJE13006

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V

7.101. mje13002dg1.pdf Size:592K _blue-rocket-elect

MJE13006
MJE13006

MJE13002DG1(BR3DD13002DG1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High freque

7.102. mje13007x8.pdf Size:441K _blue-rocket-elect

MJE13006
MJE13006

MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

7.103. mje13005p7.pdf Size:470K _blue-rocket-elect

MJE13006
MJE13006

MJE13005P7(BR3DD13005P7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

7.104. mje13002e2.pdf Size:456K _blue-rocket-elect

MJE13006
MJE13006

MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

7.105. mje13005lp7.pdf Size:467K _blue-rocket-elect

MJE13006
MJE13006

MJE13005LP7(BR3DD13005LP7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

7.106. mje13005t8.pdf Size:439K _blue-rocket-elect

MJE13006
MJE13006

MJE13005T8(BR3DD13005T8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

7.107. mje13009zj.pdf Size:450K _blue-rocket-elect

MJE13006
MJE13006

MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220S NPN Silicon NPN transistor in a TO-220S Plastic Package. / Features High VCEO High IC. / Applications High frequency electronic lighting ballast applications. / Equ

7.108. mje13007v9.pdf Size:456K _blue-rocket-elect

MJE13006
MJE13006

MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

7.109. mje13005a.pdf Size:273K _nell

MJE13006
MJE13006

RoHS MJE13005A(NPN)RoHS SEMICONDUCTORNell High Power ProductsSwitchmode Series NPN Silicon Power Transistors(4A / 400V / 75W)FEATURESVCEO(SUS) 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 ASwitching time - tf = 0.9 s (Max.) @ lC = 2 A 700V blocking capability123TO-220AB(MJE13005A) DESCRIPTION These devices are designed for high-

7.110. mje13003i.pdf Size:205K _first_silicon

MJE13006
MJE13006

SEMICONDUCTORMJE13003ITECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.DIM MILLIMETERSA 2.20 0.2B 1.50 0.15FEATURESc 0.5 0.07Excellent Switching TimesD 6.50 0.151 2 3: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0A e 2.30 typL 7.70 0.2High Collector Voltage : VCBO=700V.A1 1.20 0.05b1 0.8 0.1

7.111. mje13003 to126.pdf Size:98K _first_silicon

MJE13006
MJE13006

SEMICONDUCTOR MJE13003TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.TO-126 FEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5A1.BASEHigh Collector Voltage : VCBO=700V.2.COLLECTOR 3.EMITTERMAXIMUM RATING (Ta=25C) 1 2 3 CHARACTERISTIC SYMBOL RATING UNITVC

7.112. mje13003t.pdf Size:169K _first_silicon

MJE13006
MJE13006

SEMICONDUCTORMJE13003TTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.DFEATURESEAExcellent Switching Times: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5A CF GDIM MILLIMETERSHigh Collector Voltage : VCBO=700V.BA 8.3 MAXB 11.30.3C 4.15 TYP1 2 3D 3.20.2E 2.00.2H F 2.80.1IG 3.20.1MAXIMUM RA

7.113. mje13007f.pdf Size:286K _first_silicon

MJE13006
MJE13006

SEMICONDUCTORMJE13007FTECHNICAL DATAC MJE13007F ATRANSISTOR (NPN) SWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS_A 10 16 0 20+HIGH SPEED DC-DC CONVERTER APPLICATION._B 15 00 0 20+_C 3 00 0 20+FLUORESCENT LIGHT BALLASTOR APPLICATION.D 0 6250 125E 3 50 typF 2 7 typ_G 16 80 0 4+LMFEATURES _H 0 45 0 1

7.114. mje13003b.pdf Size:77K _first_silicon

MJE13006
MJE13006

SEMICONDUCTOR MJE13003BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=0.5S(Max.), tf=0.7S(Max.), at IC=1AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_MA

7.115. mje13002b.pdf Size:78K _first_silicon

MJE13006
MJE13006

SEMICONDUCTOR MJE13002BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=0.5S(Max.), tf=0.7S(Max.), at IC=0.8AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_

7.116. mje13003d.pdf Size:299K _first_silicon

MJE13006
MJE13006

SEMICONDUCTORMJE13003DTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.AICJFEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0ADIM MILLIMETERSA 6 50 0 2High Collector Voltage : VCBO=700V.B 5 60 0 2C 5 20 0 2D 1 50 0 2MAXIMUM RATING (Ta=25C)E 2 70 0 2F 2 30 0 1

7.117. mje13005t.pdf Size:299K _first_silicon

MJE13006
MJE13006

SEMICONDUCTORMJE13005TTECHNICAL DATA MJE13005T TRANSISTOR (NPN) unitHigh frequency electronic lightingswitching power supply applications. Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P (Ta=25) 1.25 WCP (Tc=25) 50 W CT 150 j T -55150 stg Electrical characteristics(Ta=25) Rating Symbol Test condition Unit

7.118. mje13003a.pdf Size:97K _first_silicon

MJE13006
MJE13006

SEMICONDUCTOR MJE13003ATECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_

7.119. mje13005f.pdf Size:251K _first_silicon

MJE13006
MJE13006

SEMICONDUCTORMJE13005FTECHNICAL DATAC MJE13005F TRANSISTOR (NPN) ASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS_A 10 16 0 20+HIGH SPEED DC-DC CONVERTER APPLICATION._B 15 00 0 20+_C 3 00 0 20+FLUORESCENT LIGHT BALLASTOR APPLICATION.D 0 6250 125E 3 50 typF 2 7 typ_G 16 80 0 4+FEATURES LM_H 0 45 0 1

7.120. mje13005dq3.pdf Size:244K _foshan

MJE13006
MJE13006

MJE13005DQ3(3DD13005DQ3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 450 V CEO V 9.0 V EBO I 4 A C P

7.121. mje13003di5.pdf Size:346K _foshan

MJE13006
MJE13006

MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

7.122. mje13003g6.pdf Size:219K _foshan

MJE13006
MJE13006

MJE13003G6(3DD13003G6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.123. mje13001c2.pdf Size:180K _foshan

MJE13006
MJE13006

MJE13001C2(3DD13001C2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25) 1.0 W CT 150 j T -55150 stg

7.124. mje13003dg1.pdf Size:412K _foshan

MJE13006
MJE13006

MJE13003DG1(3DD13003DG1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.125. mje13002h5.pdf Size:236K _foshan

MJE13006
MJE13006

MJE13002H5(3DD13002H5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.126. mje13003i7.pdf Size:215K _foshan

MJE13006
MJE13006

MJE13003I7(3DD13003I7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.127. mje13001c0.pdf Size:188K _foshan

MJE13006
MJE13006

MJE13001C0(3DD13001C0) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applications./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO 400 VVEBO 9.0 VIC 0.25 APC(Ta=25) 0.65 WTj 150 Tstg -55150 /Electrical chara

7.128. mje13005dq4.pdf Size:251K _foshan

MJE13006
MJE13006

MJE13005DQ4(3DD13005DQ4) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C P (T

7.129. mje13003m3.pdf Size:194K _foshan

MJE13006
MJE13006

MJE13003M3(3DD13003M3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.130. mje13003vf1.pdf Size:258K _foshan

MJE13006
MJE13006

MJE13003VF1(3DD13003VF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

7.131. mje13002g1.pdf Size:213K _foshan

MJE13006
MJE13006

MJE13002G1(3DD13002G1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.132. mje13001at.pdf Size:187K _foshan

MJE13006
MJE13006

MJE13001AT(3DD13001AT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.8 W CT 150 j T -55150 stg

7.133. mje13005q7.pdf Size:249K _foshan

MJE13006
MJE13006

MJE13005Q7(3DD13005Q7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 3.0 A C P

7.134. mje13001b1.pdf Size:163K _foshan

MJE13006
MJE13006

MJE13001B1(3DD13001B1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.135. mje13003vg1.pdf Size:237K _foshan

MJE13006
MJE13006

MJE13003VG1(3DD13003VG1) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE

7.136. mje13003k5.pdf Size:197K _foshan

MJE13006
MJE13006

MJE13003K5(3DD13003K5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.137. mje13005dq7.pdf Size:248K _foshan

MJE13006
MJE13006

MJE13005DQ7(3DD13005DQ7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

7.138. mje13009z7.pdf Size:233K _foshan

MJE13006
MJE13006

MJE13009Z7(3DD13009Z7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25) 2.0 W CP (Tc=25) 100 W CT 150 j

7.139. mje13003vg5.pdf Size:244K _foshan

MJE13006
MJE13006

MJE13003VG5(3DD13003VG5) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE

7.140. mje13003f2.pdf Size:193K _foshan

MJE13006
MJE13006

MJE13003F2(3DD13003F2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.141. mje13002f6.pdf Size:197K _foshan

MJE13006
MJE13006

MJE13002F6(3DD13002F6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.142. mje13003f5.pdf Size:250K _foshan

MJE13006
MJE13006

MJE13003F5(3DD13003F5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.143. mje13003i6.pdf Size:207K _foshan

MJE13006
MJE13006

MJE13003I6(3DD13003I6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.144. mje13003di3.pdf Size:302K _foshan

MJE13006
MJE13006

MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

7.145. mje13003ft.pdf Size:216K _foshan

MJE13006
MJE13006

MJE13003FT(3DD13003FT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.146. mje13003hk5.pdf Size:284K _foshan

MJE13006
MJE13006

MJE13003HK5(3DD13003HK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

7.147. mje13002g2.pdf Size:218K _foshan

MJE13006
MJE13006

MJE13002G2(3DD13002G2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.148. mje13002f5.pdf Size:199K _foshan

MJE13006
MJE13006

MJE13002F5(3DD13002F5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.149. mje13003vh1.pdf Size:196K _foshan

MJE13006
MJE13006

MJE13003VH13DD13003VH1 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.

7.150. mje13003hn6.pdf Size:243K _foshan

MJE13006
MJE13006

MJE13003HN6(3DD13003HN6) NPN /SILICON NPN TRANSISTOR : Purpose: For switching power supply and other power switching circuit. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25) 1.25 W CP

7.151. mje13003k8.pdf Size:202K _foshan

MJE13006
MJE13006

MJE13003K8(3DD13003K8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.152. mje13003h6.pdf Size:191K _foshan

MJE13006
MJE13006

MJE13003H6(3DD13003H6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.153. mje13003m6.pdf Size:189K _foshan

MJE13006
MJE13006

MJE13003M6(3DD13003M6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.154. mje13003l3.pdf Size:286K _foshan

MJE13006
MJE13006

MJE13003L3(3DD13003L3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

7.155. mje13003dk7.pdf Size:244K _foshan

MJE13006
MJE13006

MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.156. mje13001c1.pdf Size:170K _foshan

MJE13006
MJE13006

MJE13001C1(3DD13001C1) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applications./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO 400 VVEBO 9.0 VIC 0.25 APC(Ta=25) 1.0 WTj 150 Tstg -55150 /Electrical charac

7.157. mje13009z9.pdf Size:232K _foshan

MJE13006
MJE13006

MJE13009Z9(3DD13009Z9) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25) 2.0 W CP (Tc=25) 100 W CT 150 j

7.158. mje13002i6.pdf Size:209K _foshan

MJE13006
MJE13006

MJE13002I6(3DD13002I6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.159. mje13002h6.pdf Size:189K _foshan

MJE13006
MJE13006

MJE13002H6(3DD13002H6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.160. mje13003m1.pdf Size:182K _foshan

MJE13006
MJE13006

MJE13003M1(3DD13003M1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.161. mje13003dk5.pdf Size:246K _foshan

MJE13006
MJE13006

MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.162. mje13003j1.pdf Size:273K _foshan

MJE13006
MJE13006

MJE13003J1(3DD13003J1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

7.163. mje13003g1.pdf Size:212K _foshan

MJE13006
MJE13006

MJE13003G1(3DD13003G1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.164. mje13002g6.pdf Size:220K _foshan

MJE13006
MJE13006

MJE13002G6(3DD13002G6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.165. mje13003di1.pdf Size:291K _foshan

MJE13006
MJE13006

MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.166. mje13005t7.pdf Size:154K _foshan

MJE13006
MJE13006

MJE13005T7(3DD13005T7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A

7.167. mje13003i1.pdf Size:200K _foshan

MJE13006
MJE13006

MJE13003I1(3DD13003I1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.168. mje13005vt7.pdf Size:168K _foshan

MJE13006
MJE13006

MJE13005VT7(3DD13005VT7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V CBO V 200 V CEO V 9.0 V EBO I 8.0 A C P (Ta=2

7.169. mje13003f6.pdf Size:200K _foshan

MJE13006
MJE13006

MJE13003F6(3DD13003F6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.170. mje13005dq5.pdf Size:239K _foshan

MJE13006
MJE13006

MJE13005DQ5(3DD13005DQ5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

7.171. mje13003vn5.pdf Size:384K _foshan

MJE13006
MJE13006

MJE13003VN5(3DD13003VN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

7.172. mje13002de1.pdf Size:240K _foshan

MJE13006
MJE13006

MJE13002DE1(3DD13002DE1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600

7.173. mje13003dk1.pdf Size:238K _foshan

MJE13006
MJE13006

MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.174. mje13003l5.pdf Size:283K _foshan

MJE13006
MJE13006

MJE13003L5(3DD13003L5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

7.175. mje13003n8.pdf Size:258K _foshan

MJE13006
MJE13006

MJE13003N8(3DD13003N8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.176. mje13003lf5.pdf Size:309K _foshan

MJE13006
MJE13006

MJE13003LF5(3DD13003LF5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

7.177. mje13005dt3.pdf Size:193K _foshan

MJE13006
MJE13006

MJE13005DT3 (3DD13005DT3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C I 2 AB

7.178. mje13003vh5.pdf Size:203K _foshan

MJE13006
MJE13006

MJE13003VH53DD13003VH5 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.

7.179. mje13003h1.pdf Size:195K _foshan

MJE13006
MJE13006

MJE13003H1(3DD13003H1) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO

7.180. mje13004p1.pdf Size:158K _foshan

MJE13006
MJE13006

MJE13004P1(3DD13004P1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.181. mje13003k7.pdf Size:204K _foshan

MJE13006
MJE13006

MJE13003K7(3DD13003K7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.182. mje13002g5.pdf Size:269K _foshan

MJE13006
MJE13006

MJE13002G5(3DD13002G5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.183. mje13003vk5.pdf Size:232K _foshan

MJE13006
MJE13006

MJE13003VK5(3DD13003VK5) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.

7.184. mje13003g5.pdf Size:219K _foshan

MJE13006
MJE13006

MJE13003G5(3DD13003G5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.185. mje13003l1.pdf Size:277K _foshan

MJE13006
MJE13006

MJE13003L1(3DD13003L1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

7.186. mje13003lf1.pdf Size:251K _foshan

MJE13006
MJE13006

MJE13003LF1(3DD13003LF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

7.187. mje13004p3.pdf Size:156K _foshan

MJE13006
MJE13006

MJE13004P3(3DD13004P3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CB

7.188. mje13001de1.pdf Size:243K _foshan

MJE13006
MJE13006

MJE13001DE1(3DD13001DE1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600

7.189. mje13003k4.pdf Size:207K _foshan

MJE13006
MJE13006

MJE13003K4(3DD13003K4) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.190. mje13002f2.pdf Size:193K _foshan

MJE13006
MJE13006

MJE13002F2(3DD13002F2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.191. mje13007dv7.pdf Size:240K _foshan

MJE13006
MJE13006

MJE13007DV7 NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V V 400 CEO V 9.0 V EBO I 7 A C I 16 A CP I 4.0

7.192. mje13003n5.pdf Size:257K _foshan

MJE13006
MJE13006

MJE13003N5(3DD13003N5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.193. mje13003k3.pdf Size:206K _foshan

MJE13006
MJE13006

MJE13003K3(3DD13003K3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.194. mje13002vh1.pdf Size:195K _foshan

MJE13006
MJE13006

MJE13002VH1(3DD13002VH1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

7.195. mje13001a2.pdf Size:153K _foshan

MJE13006
MJE13006

MJE13001A2(3DD13001A2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.8 W CT 150 j T -55150 stg

7.196. mje13003dk3.pdf Size:238K _foshan

MJE13006
MJE13006

MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.197. mje13001a0.pdf Size:159K _foshan

MJE13006
MJE13006

MJE13001A0(3DD13001A0) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.5 W CT 150 j T -55150 stg

7.198. mje13001a1.pdf Size:147K _foshan

MJE13006
MJE13006

MJE13001A1(3DD13001A1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.8 W CT 150 j T -55150 stg

7.199. mje13003vn7.pdf Size:389K _foshan

MJE13006
MJE13006

MJE13003VN7(3DD13003VN7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

7.200. mje13003f1.pdf Size:192K _foshan

MJE13006
MJE13006

MJE13003F1(3DD13003F1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.201. mje13003vi5.pdf Size:190K _foshan

MJE13006
MJE13006

MJE13003VI53DD13003VI5 NPN /SILICON NPN TRANSISTOR Purpose:High voltage capability,high speed switching,wide SOA. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. /Absolute maximum ratings(Tc=25

7.202. mje13003j1g.pdf Size:274K _foshan

MJE13006
MJE13006

MJE13003J1G(3DD13003J1G) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

7.203. mje13003h5.pdf Size:189K _foshan

MJE13006
MJE13006

MJE13003H5(3DD13003H5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.204. mje13002h1.pdf Size:181K _foshan

MJE13006
MJE13006

MJE13002H1(3DD13002H1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.205. mje13001e2.pdf Size:238K _foshan

MJE13006
MJE13006

MJE13001E2(3DD13001E2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25) 1.0 W CT 150 j T -55150

7.206. mje13003vk3.pdf Size:230K _foshan

MJE13006
MJE13006

MJE13003VK3(3DD13003VK3) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.

7.207. mje13001e1.pdf Size:237K _foshan

MJE13006
MJE13006

MJE13001E1(3DD13001E1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25) 1.0 W CT 150 j T -55150

7.208. mje13003h3.pdf Size:191K _foshan

MJE13006
MJE13006

MJE13003H3(3DD13003H3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.209. mje13003dg5.pdf Size:428K _foshan

MJE13006
MJE13006

MJE13003DG5(3DD13003DG5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700

7.210. mje13002i7.pdf Size:216K _foshan

MJE13006
MJE13006

MJE13002I7(3DD13002I7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.211. mje13001ct.pdf Size:180K _foshan

MJE13006
MJE13006

MJE13001CT(3DD13001CT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25) 1.0 W CT 150 j T -55150 stg

7.212. mje13003k6.pdf Size:199K _foshan

MJE13006
MJE13006

MJE13003K6(3DD13003K6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.213. mje13003vi1.pdf Size:218K _foshan

MJE13006
MJE13006

MJE13003VI1 3DD13003VI1 NPN /SILICON NPN TRANSISTOR 110V Purpose: Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. Features: High voltage capability,high speed switching,wide SOA. /Absolute maximum ratings(

7.214. mje13005dp5.pdf Size:292K _foshan

MJE13006
MJE13006

MJE13005DP5(3DD13005DP5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.5 A C

7.215. mje13005dt7.pdf Size:204K _foshan

MJE13006
MJE13006

MJE13005DT7(3DD13005DT7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A

7.216. mje13003e1.pdf Size:290K _foshan

MJE13006
MJE13006

MJE13003E1(3DD13003E1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.217. mje13003m7.pdf Size:197K _foshan

MJE13006
MJE13006

MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.218. mje13002i5.pdf Size:208K _foshan

MJE13006
MJE13006

MJE13002I5(3DD13002I5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

7.219. mje13003m8.pdf Size:191K _foshan

MJE13006
MJE13006

MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.220. mje13003m5.pdf Size:187K _foshan

MJE13006
MJE13006

MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 700 VVCEO

7.221. mje13003dn5.pdf Size:261K _foshan

MJE13006
MJE13006

MJE13003DN5(3DD13003DN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

7.222. mje13007v7.pdf Size:238K _foshan

MJE13006
MJE13006

MJE13007V7(3DD13007V7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 8.0 A C I 16 A

7.223. mje13003l6.pdf Size:284K _foshan

MJE13006
MJE13006

MJE13003L6(3DD13003L6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

7.224. mje13005drb.pdf Size:235K _foshan

MJE13006
MJE13006

MJE13005DRB NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C P (Ta=25)

7.225. mje13009-3pn.pdf Size:173K _inchange_semiconductor

MJE13006
MJE13006

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;con

7.226. mje13002.pdf Size:120K _inchange_semiconductor

MJE13006
MJE13006

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13002 DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN DESCRIPTION1 Base Collector;

7.227. mje13004.pdf Size:120K _inchange_semiconductor

MJE13006
MJE13006

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13004 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;

7.228. mje13009f.pdf Size:215K _inchange_semiconductor

MJE13006
MJE13006

isc Silicon NPN Power Transistor MJE13009FDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are

7.229. mje13005.pdf Size:154K _inchange_semiconductor

MJE13006
MJE13006

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13005 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;

7.230. mje13003.pdf Size:169K _inchange_semiconductor

MJE13006
MJE13006

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13003 DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;c

7.231. mje13003d.pdf Size:128K _inchange_semiconductor

MJE13006
MJE13006

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 7

7.232. mje13005d.pdf Size:220K _inchange_semiconductor

MJE13006
MJE13006

Isc Silicon NPN Power Transistor MJE13005DDESCRIPTIONHigh Voltage CapabilityHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFluorescent lampElectronic ballastElectronic transformerSwitch mode power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

7.233. mje13009.pdf Size:157K _inchange_semiconductor

MJE13006
MJE13006

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;

7.234. mje13003a.pdf Size:213K _inchange_semiconductor

MJE13006
MJE13006

isc Silicon NPN Power Transistor MJE13003ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 1.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top