All Transistors. MJE13071 Datasheet

 

MJE13071 Transistor. Datasheet pdf. Equivalent

Type Designator: MJE13071

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 750 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO220

MJE13071 Transistor Equivalent Substitute - Cross-Reference Search

MJE13071 Datasheet (PDF)

3.1. mje13070_13071.pdf Size:148K _inchange_semiconductor

MJE13071
MJE13071

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJE13070/13071 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071 · Collector-Emitter Saturation Voltage- : VCE(sat) = 3.0V(Min)@IC= 5A APPLICATIONS ·Designed for high-voltage, high-speed, power switching in inductive circuits, where fa

4.1. mje13002i6.pdf Size:209K _update

MJE13071
MJE13071

MJE13002I6(3DD13002I6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.2. mje13003vk3.pdf Size:230K _update

MJE13071
MJE13071

MJE13003VK3(3DD13003VK3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:耐压高,开关速度快,安全工作区宽,符合 RoHS 规范。 Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 特点:适用于 110V 电路、节能灯、电子镇流器。 Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast. 极

4.3. mje13002g6.pdf Size:220K _update

MJE13071
MJE13071

MJE13002G6(3DD13002G6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.4. mje13003g6.pdf Size:219K _update

MJE13071
MJE13071

MJE13003G6(3DD13003G6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.5. mje13005vt7.pdf Size:168K _update

MJE13071
MJE13071

MJE13005VT7(3DD13005VT7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V CBO V 200 V CEO V 9.0 V EBO I 8.0 A C P (Ta=2

4.6. mje13003hk5.pdf Size:284K _update

MJE13071
MJE13071

MJE13003HK5(3DD13003HK5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

4.7. mje13002vh1.pdf Size:195K _update

MJE13071
MJE13071

MJE13002VH1(3DD13002VH1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

4.8. mje13009x8.pdf Size:423K _update

MJE13071
MJE13071

MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 主要用于节能灯电路。 High frequency electronic lighting ballast applications.

4.9. mje13001c1.pdf Size:170K _update

MJE13071
MJE13071

MJE13001C1(3DD13001C1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.25 A PC(Ta=25℃) 1.0 W Tj 150 ℃ Tstg -55~150 ℃ 电性能参数/Electrical charac

4.10. mje13007v7.pdf Size:238K _update

MJE13071
MJE13071

MJE13007V7(3DD13007V7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 8.0 A C I 16 A

4.11. mje13005dq4.pdf Size:251K _update

MJE13071
MJE13071

MJE13005DQ4(3DD13005DQ4) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C P (T

4.12. mje13005dq5.pdf Size:239K _update

MJE13071
MJE13071

MJE13005DQ5(3DD13005DQ5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 800 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

4.13. mje13005t8.pdf Size:439K _update

MJE13071
MJE13071

MJE13005T8(BR3DD13005T8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic light

4.14. mje13003di3.pdf Size:302K _update

MJE13071
MJE13071

MJE13003DI3(3DD13003DI3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 800 V

4.15. mje13003m8.pdf Size:191K _update

MJE13071
MJE13071

MJE13003M8(3DD13003M8) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.16. mje13003hn6.pdf Size:243K _update

MJE13071
MJE13071

MJE13003HN6(3DD13003HN6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于开关电源等各类功率开关电路。 Purpose: For switching power supply and other power switching circuit. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25℃) 1.25 W C P

4.17. mje13005dt3.pdf Size:193K _update

MJE13071
MJE13071

MJE13005DT3 (3DD13005DT3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C I 2 A B

4.18. mje13003i7.pdf Size:215K _update

MJE13071
MJE13071

MJE13003I7(3DD13003I7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.19. mje13003j1.pdf Size:273K _update

MJE13071
MJE13071

MJE13003J1(3DD13003J1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

4.20. mje13005t7.pdf Size:154K _update

MJE13071
MJE13071

MJE13005T7(3DD13005T7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A

4.21. mje13005dt7.pdf Size:204K _update

MJE13071
MJE13071

MJE13005DT7(3DD13005DT7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A

4.22. mje13003g5.pdf Size:219K _update

MJE13071
MJE13071

MJE13003G5(3DD13003G5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.23. mje13001a0.pdf Size:159K _update

MJE13071
MJE13071

MJE13001A0(3DD13001A0) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25℃) 0.5 W C T 150 ℃ j T -55~150 ℃ stg

4.24. mje13001b1.pdf Size:163K _update

MJE13071
MJE13071

MJE13001B1(3DD13001B1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.25. mje13003lf1.pdf Size:251K _update

MJE13071
MJE13071

MJE13003LF1(3DD13003LF1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

4.26. mje13005g.pdf Size:475K _update

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.  FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С *

4.27. mje13003h3.pdf Size:191K _update

MJE13071
MJE13071

MJE13003H3(3DD13003H3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.28. mje13003h1.pdf Size:195K _update

MJE13071
MJE13071

MJE13003H1(3DD13003H1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 600 V VCEO

4.29. mje13003f1.pdf Size:192K _update

MJE13071
MJE13071

MJE13003F1(3DD13003F1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.30. mje13002g1.pdf Size:213K _update

MJE13071
MJE13071

MJE13002G1(3DD13002G1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.31. mje13003ft.pdf Size:216K _update

MJE13071
MJE13071

MJE13003FT(3DD13003FT) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.32. mje13001e2.pdf Size:238K _update

MJE13071
MJE13071

MJE13001E2(3DD13001E2) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25℃) 1.0 W C T 150 ℃ j T -55~150 ℃

4.33. mje13003dk7.pdf Size:244K _update

MJE13071
MJE13071

MJE13003DK7(3DD13003DK7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.34. mje13003dg5.pdf Size:428K _update

MJE13071
MJE13071

MJE13003DG5(3DD13003DG5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700

4.35. mje13007x8.pdf Size:441K _update

MJE13071
MJE13071

MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic light

4.36. mje13003dk1.pdf Size:238K _update

MJE13071
MJE13071

MJE13003DK1(3DD13003DK1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.37. mje13003l6.pdf Size:284K _update

MJE13071
MJE13071

MJE13003L6(3DD13003L6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

4.38. mje13003vi1.pdf Size:218K _update

MJE13071
MJE13071

MJE13003VI1 (3DD13003VI1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:适用于 110V 电路、节能灯、电子镇流器。 Purpose: Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. 特点:耐压高,开关速度快,安全工作区宽。 Features: High voltage capability,high speed switching,wide SOA. 极限参数/Absolute maximum ratings(

4.39. mje13005dp5.pdf Size:292K _update

MJE13071
MJE13071

MJE13005DP5(3DD13005DP5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.5 A C

4.40. mje13005p7.pdf Size:470K _update

MJE13071
MJE13071

MJE13005P7(BR3DD13005P7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic lightin

4.41. mje13003vn7.pdf Size:389K _update

MJE13071
MJE13071

MJE13003VN7(3DD13003VN7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

4.42. mje13009x7.pdf Size:463K _update

MJE13071
MJE13071

MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications . 内部等效

4.43. mje13003m6.pdf Size:189K _update

MJE13071
MJE13071

MJE13003M6(3DD13003M6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.44. mje13001e1.pdf Size:237K _update

MJE13071
MJE13071

MJE13001E1(3DD13001E1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25℃) 1.0 W C T 150 ℃ j T -55~150 ℃

4.45. mje13004p3.pdf Size:156K _update

MJE13071
MJE13071

MJE13004P3(3DD13004P3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于电子适配器、电子充电器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CB

4.46. mje13003vk5.pdf Size:232K _update

MJE13071
MJE13071

MJE13003VK5(3DD13003VK5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:耐压高,开关速度快,安全工作区宽,符合 RoHS 规范。 Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 特点:适用于 110V 电路、节能灯、电子镇流器。 Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast. 极

4.47. mje13001de1.pdf Size:243K _update

MJE13071
MJE13071

MJE13001DE1(3DD13001DE1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600

4.48. mje13003vh5.pdf Size:203K _update

MJE13071
MJE13071

MJE13003VH5(3DD13003VH5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:耐压高,开关速度快,安全工作区宽,符合 RoHS 规范。 Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 特点:适用于 110V 电路、节能灯、电子镇流器。 Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. 极限参数

4.49. mje13003vk1.pdf Size:418K _update

MJE13071
MJE13071

MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 适用于 110V 电路、节能灯、电子镇流器。 Suitable for 110V circuit mode, fluore

4.50. mje13004p1.pdf Size:158K _update

MJE13071
MJE13071

MJE13004P1(3DD13004P1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.51. mje13002e1.pdf Size:456K _update

MJE13071
MJE13071

MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High frequenc

4.52. mje13009z9.pdf Size:232K _update

MJE13071
MJE13071

MJE13009Z9(3DD13009Z9) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25℃) 2.0 W C P (Tc=25℃) 100 W C T 150 ℃ j

4.53. mje13003i5.pdf Size:830K _update

MJE13071
MJE13071

MJE13003I5(BR3DD13003I5Q) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126(R)塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126(R) Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High

4.54. mje13002de1.pdf Size:240K _update

MJE13071
MJE13071

MJE13002DE1(3DD13002DE1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600

4.55. mje13003g1.pdf Size:212K _update

MJE13071
MJE13071

MJE13003G1(3DD13003G1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.56. mje13009-3pn.pdf Size:173K _update

MJE13071
MJE13071

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;con

4.57. mje13003f5.pdf Size:250K _update

MJE13071
MJE13071

MJE13003F5(3DD13003F5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.58. mje13003f2.pdf Size:193K _update

MJE13071
MJE13071

MJE13003F2(3DD13003F2) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.59. mje13003k4.pdf Size:207K _update

MJE13071
MJE13071

MJE13003K4(3DD13003K4) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.60. mje13005drb.pdf Size:235K _update

MJE13071
MJE13071

MJE13005DRB 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C P (Ta=25℃)

4.61. mje13003n8.pdf Size:258K _update

MJE13071
MJE13071

MJE13003N8(3DD13003N8) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.62. mje13003vh1.pdf Size:196K _update

MJE13071
MJE13071

MJE13003VH1(3DD13003VH1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:耐压高,开关速度快,安全工作区宽,符合 RoHS 规范。 Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 特点:适用于 110V 电路、节能灯、电子镇流器。 Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. 极限

4.63. mje13003j1g.pdf Size:274K _update

MJE13071
MJE13071

MJE13003J1G(3DD13003J1G) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

4.64. mje13001a1.pdf Size:147K _update

MJE13071
MJE13071

MJE13001A1(3DD13001A1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25℃) 0.8 W C T 150 ℃ j T -55~150 ℃ stg

4.65. mje13002dg1.pdf Size:592K _update

MJE13071
MJE13071

MJE13002DG1(BR3DD13002DG1K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High freque

4.66. mje13001at.pdf Size:187K _update

MJE13071
MJE13071

MJE13001AT(3DD13001AT) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25℃) 0.8 W C T 150 ℃ j T -55~150 ℃ stg

4.67. mje13003m3.pdf Size:194K _update

MJE13071
MJE13071

MJE13003M3(3DD13003M3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.68. mje13003l1.pdf Size:277K _update

MJE13071
MJE13071

MJE13003L1(3DD13003L1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

4.69. mje13003h5.pdf Size:189K _update

MJE13071
MJE13071

MJE13003H5(3DD13003H5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.70. mje13003m5.pdf Size:187K _update

MJE13071
MJE13071

MJE13003M5(3DD13003M5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 700 V VCEO

4.71. mje13002i5.pdf Size:208K _update

MJE13071
MJE13071

MJE13002I5(3DD13002I5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.72. mje13005q7.pdf Size:249K _update

MJE13071
MJE13071

MJE13005Q7(3DD13005Q7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 3.0 A C P

4.73. mje13003vn5.pdf Size:384K _update

MJE13071
MJE13071

MJE13003VN5(3DD13003VN5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

4.74. mje13003k.pdf Size:308K _update

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching ma

4.75. mje13005dq3.pdf Size:244K _update

MJE13071
MJE13071

MJE13005DQ3(3DD13005DQ3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 450 V CEO V 9.0 V EBO I 4 A C P

4.76. mje13003k8.pdf Size:202K _update

MJE13071
MJE13071

MJE13003K8(3DD13003K8) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.77. mje13003k6.pdf Size:199K _update

MJE13071
MJE13071

MJE13003K6(3DD13003K6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.78. mje13003h6.pdf Size:191K _update

MJE13071
MJE13071

MJE13003H6(3DD13003H6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.79. mje13001c0.pdf Size:188K _update

MJE13071
MJE13071

MJE13001C0(3DD13001C0) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.25 A PC(Ta=25℃) 0.65 W Tj 150 ℃ Tstg -55~150 ℃ 电性能参数/Electrical chara

4.80. mje13003vk7.pdf Size:446K _update

MJE13071
MJE13071

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快,安全工作区宽,符合 RoHS 规范。 High voltage capability, high speed switching, wide soa, RoHS compliant. 用途 / Applications 适用于 110V 电路

4.81. mje13009x9.pdf Size:445K _update

MJE13071
MJE13071

MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN Transistor in a TO-3P Plastic Package. 特征 / Features 快速转换。 High Speed Switching 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等效电路 / Equivalent Circuit 引脚排列

4.82. mje13003di1.pdf Size:291K _update

MJE13071
MJE13071

MJE13003DI1(3DD13003DI1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.83. mje13007x9.pdf Size:447K _update

MJE13071
MJE13071

MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN Transistor in a TO-3P Plastic Package. 特征 / Features 快速转换。 High Speed Switching 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic lighting, switching power supply applications.

4.84. mje13003di5.pdf Size:346K _update

MJE13071
MJE13071

MJE13003DI5(3DD13003DI5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 800 V

4.85. mje13007dv7.pdf Size:240K _update

MJE13071
MJE13071

MJE13007DV7 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V V 400 CEO V 9.0 V EBO I 7 A C I 16 A CP I 4.0

4.86. mje13005dq7.pdf Size:248K _update

MJE13071
MJE13071

MJE13005DQ7(3DD13005DQ7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

4.87. mje13002g5.pdf Size:269K _update

MJE13071
MJE13071

MJE13002G5(3DD13002G5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.88. mje13003e1.pdf Size:290K _update

MJE13071
MJE13071

MJE13003E1(3DD13003E1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.89. mje13007x7.pdf Size:455K _update

MJE13071
MJE13071

MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic lightin

4.90. mje13003i6.pdf Size:207K _update

MJE13071
MJE13071

MJE13003I6(3DD13003I6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

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MJE13071
MJE13071

MJE13003VG1(3DD13003VG1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 400 V VCE

4.92. mje13009z8.pdf Size:449K _update

MJE13071
MJE13071

MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等

4.93. mje13003g.pdf Size:107K _update

MJE13071
MJE13071

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http://onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat

4.94. mje13003m7.pdf Size:197K _update

MJE13071
MJE13071

MJE13003M7(3DD13003M7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.95. mje13003dg1.pdf Size:412K _update

MJE13071
MJE13071

MJE13003DG1(3DD13003DG1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.96. mje13007hv7.pdf Size:506K _update

MJE13071
MJE13071

MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic light

4.97. mje13003l3.pdf Size:286K _update

MJE13071
MJE13071

MJE13003L3(3DD13003L3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

4.98. mje13005dc.pdf Size:857K _update

MJE13071
MJE13071

SEMICONDUCTOR MJE13005DC TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. ·Built-in Free wheeling Diode makes efficient anti saturation operation. ·Suitable for half bridge light ballast Applications. ·Low base drive requirement. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collec

4.99. mje13003k3.pdf Size:206K _update

MJE13071
MJE13071

MJE13003K3(3DD13003K3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.100. mje13002h1.pdf Size:181K _update

MJE13071
MJE13071

MJE13002H1(3DD13002H1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.101. mje13003dn5.pdf Size:261K _update

MJE13071
MJE13071

MJE13003DN5(3DD13003DN5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.102. mje13005p8.pdf Size:460K _update

MJE13071
MJE13071

MJE13005P8(BR3DD13005P8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High fr

4.103. mje13011.pdf Size:105K _update

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO.,LTD MJE13011 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability 1 TO-3P *Pb-free plating product number: MJE13011L PIN CONFIGURATION PIN NO. PIN NAME 1 BASE 2 COLLECTOR 3 EMITTER ORDERING INFORMATION Order Number Package Packing Normal Lead Free Plating

4.104. mje13007g.pdf Size:408K _update

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications.  FEATURES * VCEO(SUS) 400V * 7

4.105. mje13002g2.pdf Size:218K _update

MJE13071
MJE13071

MJE13002G2(3DD13002G2) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.106. mje13003i1.pdf Size:200K _update

MJE13071
MJE13071

MJE13003I1(3DD13003I1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.107. mje13003k5.pdf Size:197K _update

MJE13071
MJE13071

MJE13003K5(3DD13003K5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.108. mje13002f1.pdf Size:407K _update

MJE13071
MJE13071

MJE13002F1(BR3DD13002F1K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High frequenc

4.109. mje13003k7.pdf Size:204K _update

MJE13071
MJE13071

MJE13003K7(3DD13003K7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.110. mje13001a2.pdf Size:153K _update

MJE13071
MJE13071

MJE13001A2(3DD13001A2) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25℃) 0.8 W C T 150 ℃ j T -55~150 ℃ stg

4.111. mje13002h6.pdf Size:189K _update

MJE13071
MJE13071

MJE13002H6(3DD13002H6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.112. mje13002g.pdf Size:303K _update

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor co

4.113. mje13002e2.pdf Size:456K _update

MJE13071
MJE13071

MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High frequenc

4.114. mje13003vg5.pdf Size:244K _update

MJE13071
MJE13071

MJE13003VG5(3DD13003VG5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 400 V VCE

4.115. mje13002f5.pdf Size:199K _update

MJE13071
MJE13071

MJE13002F5(3DD13002F5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.116. mje13003n5.pdf Size:257K _update

MJE13071
MJE13071

MJE13003N5(3DD13003N5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.117. mje13002f2.pdf Size:193K _update

MJE13071
MJE13071

MJE13002F2(3DD13002F2) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.118. mje13005lp7.pdf Size:467K _update

MJE13071
MJE13071

MJE13005LP7(BR3DD13005LP7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic light

4.119. mje13003dk3.pdf Size:238K _update

MJE13071
MJE13071

MJE13003DK3(3DD13003DK3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.120. mje13003f6.pdf Size:200K _update

MJE13071
MJE13071

MJE13003F6(3DD13003F6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.121. mje13009g.pdf Size:448K _update

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid

4.122. mje13007v8.pdf Size:439K _update

MJE13071
MJE13071

MJE13007V8(BR3DD13007V8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等

4.123. mje13002i7.pdf Size:216K _update

MJE13071
MJE13071

MJE13002I7(3DD13002I7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.124. mje13003lf5.pdf Size:309K _update

MJE13071
MJE13071

MJE13003LF5(3DD13003LF5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

4.125. mje13003m1.pdf Size:182K _update

MJE13071
MJE13071

MJE13003M1(3DD13003M1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.126. mje13001c2.pdf Size:180K _update

MJE13071
MJE13071

MJE13001C2(3DD13001C2) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25℃) 1.0 W C T 150 ℃ j T -55~150 ℃ stg

4.127. mje13005a.pdf Size:273K _update

MJE13071
MJE13071

RoHS MJE13005A(NPN) RoHS SEMICONDUCTOR Nell High Power Products Switchmode Series NPN Silicon Power Transistors (4A / 400V / 75W) FEATURES VCEO(SUS) ≥ 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 A Switching time - tf = 0.9 µs (Max.) @ lC = 2 A 700V blocking capability 1 2 3 TO-220AB (MJE13005A) DESCRIPTION These devices are designed for high-

4.128. mje13002h5.pdf Size:236K _update

MJE13071
MJE13071

MJE13002H5(3DD13002H5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.129. mje13003vf1.pdf Size:258K _update

MJE13071
MJE13071

MJE13003VF1(3DD13003VF1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 400 V

4.130. mje13002f6.pdf Size:197K _update

MJE13071
MJE13071

MJE13002F6(3DD13002F6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.131. mje13009z7.pdf Size:233K _update

MJE13071
MJE13071

MJE13009Z7(3DD13009Z7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25℃) 2.0 W C P (Tc=25℃) 100 W C T 150 ℃ j

4.132. mje13007v9.pdf Size:456K _update

MJE13071
MJE13071

MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN Transistor in a TO-3P Plastic Package. 特征 / Features 快速转换。 High Speed Switching 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等效电路 / Equivalent Circuit 引脚排列

4.133. mje13003l5.pdf Size:283K _update

MJE13071
MJE13071

MJE13003L5(3DD13003L5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 900 V

4.134. mje13003vi5.pdf Size:190K _update

MJE13071
MJE13071

MJE13003VI5(3DD13003VI5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:耐压高,开关速度快,安全工作区宽。 Purpose:High voltage capability,high speed switching,wide SOA. 特点:适用于 110V 电路、节能灯、电子镇流器。 Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. 极限参数/Absolute maximum ratings(Tc=25

4.135. mje13003dk5.pdf Size:246K _update

MJE13071
MJE13071

MJE13003DK5(3DD13003DK5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.136. mje13001ct.pdf Size:180K _update

MJE13071
MJE13071

MJE13001CT(3DD13001CT) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25℃) 1.0 W C T 150 ℃ j T -55~150 ℃ stg

4.137. mje13009.pdf Size:451K _motorola

MJE13071
MJE13071

Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's? Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for highvoltage, highspeed power switching inductive 100 WATTS circuits where fall time is critical. They are particularly suited

4.138. mje13002.pdf Size:304K _motorola

MJE13071
MJE13071

Order this document MOTOROLA by MJE13002/D SEMICONDUCTOR TECHNICAL DATA * MJE13002 MJE13003* Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series 1.5 AMPERE NPN SILICON NPN Silicon Power Transistors POWER TRANSISTORS 300 AND 400 VOLTS These devices are designed for highvoltage, highspeed power switching 40 WATTS inductive circuits where fall time is critical. They

4.139. mje13007.pdf Size:337K _motorola

MJE13071
MJE13071

Order this document MOTOROLA by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE? NPN Bipolar Power Transistor POWER TRANSISTOR For Switching Power Supply Applications 8.0 AMPERES 400 VOLTS The MJE/MJF13007 is designed for highvoltage, highspeed power switching 80/40 WATTS inductive circuits where fall time is critical. It is particularly

4.140. mje13005.pdf Size:311K _motorola

MJE13071
MJE13071

Order this document MOTOROLA by MJE13005/D SEMICONDUCTOR TECHNICAL DATA * MJE13005 *Motorola Preferred Device Designer's? Data Sheet 4 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS These devices are designed for highvoltage, highspeed power switching 75 WATTS inductive circuits where fall time is critical. They are particularly suite

4.141. mje13009.pdf Size:78K _st

MJE13071
MJE13071

MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitt

4.142. mje13007.pdf Size:29K _st

MJE13071
MJE13071

MJE13007 ? SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 2 The MJE13007 is a silicon multiepitaxial mesa 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 It is are inteded for use in motor control, switching regulators etc. INTERNAL

4.143. mje13005.pdf Size:60K _st

MJE13071
MJE13071

MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V 700 V CEV Collector-Emitter Voltage VCEO Collector-Emi

4.144. mje13007a.pdf Size:63K _st

MJE13071
MJE13071

MJE13007A SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 The MJE13007A is silicon multiepitaxial mesa 2 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 They are inteded for use in motor control, switching regulators etc. INTERNAL

4.145. mje13004_mje13005.pdf Size:72K _central

MJE13071
MJE13071

DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage VCEV

4.146. mje13005.pdf Size:114K _central

MJE13071
MJE13071

DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 V Collector-Emitter Voltage VCEV 700 V Emitter-Base Voltage VEBO 9.0 V Collec

4.147. mje13009-d.pdf Size:189K _onsemi

MJE13071
MJE13071

MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILI

4.148. mje13005g.pdf Size:150K _onsemi

MJE13071
MJE13071

MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 4 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SIL

4.149. mje13003.pdf Size:107K _onsemi

MJE13071
MJE13071

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http://onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feature

4.150. mje13007-d.pdf Size:194K _onsemi

MJE13071
MJE13071

MJE13007G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high-voltage, high-speed power http://onsemi.com switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay POWER TRANSISTOR driver

4.151. mje13003-e.pdf Size:274K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control

4.152. mje13009d.pdf Size:183K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lights

4.153. mje13005d-k.pdf Size:115K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in energ

4.154. mje13007d.pdf Size:368K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 700V

4.155. mje13009.pdf Size:448K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Re

4.156. mje13001.pdf Size:180K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13001L-x-AB3-A -R MJE13001G-x-AB3-A-R SOT-89 E C B Tape Reel MJE13001L-x-AB3-F -R MJE13001G-x-AB3-F-R

4.157. mje13002.pdf Size:278K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, S

4.158. mje13009-k.pdf Size:440K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi

4.159. mje13007-m.pdf Size:351K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V *

4.160. mje13003d-p.pdf Size:126K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low

4.161. mje13007.pdf Size:380K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS ? DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. ? FEATURES * VCEO(SUS) 400V * 700V Blo

4.162. mje13005-k.pdf Size:393K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. ? FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Indu

4.163. mje13001-p.pdf Size:191K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B TO-92 B C E Tape Box MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K TO

4.164. mje13003d.pdf Size:204K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High

4.165. mje13005d.pdf Size:118K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 1 1 TRANSISTOR TO-220 TO-220F ? DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1 power transistor. It is characterized by high breakdown voltage, 1 high current capability, high switching speed and high reliability. TO-251 TO-126 The UTC MJE1

4.166. mje13003.pdf Size:399K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive s

4.167. mje13003-p.pdf Size:358K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Induct

4.168. mje13005.pdf Size:412K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. ? FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Induct

4.169. mje13009-p.pdf Size:424K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi

4.170. mje13002-e.pdf Size:276K _utc

MJE13071
MJE13071

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor contro

4.171. mje13002_13003.pdf Size:248K _cdil

MJE13071
MJE13071

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13002 MJE13003 UNIT VCEO(sus) Collector Emitter Voltage 300 40

4.172. mje13006_07.pdf Size:330K _cdil

MJE13071
MJE13071

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13006 MJE13007 UNIT Collector Emitter Sustaining Voltage VCEO (sus) 300 400 V Collector Emitter Voltage VCEV 600 700 V VEBO Emitte

4.173. mje13004_05.pdf Size:273K _cdil

MJE13071
MJE13071

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13004 MJE13005 UNIT Collector Emitter Sustaining Voltage VCEO (sus) 300 400 V Collector Emitter Voltage VCEV 600 700 V VEBO Emitte

4.174. mje13009.pdf Size:272K _kec

MJE13071
MJE13071

SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VC

4.175. mje13009f.pdf Size:280K _kec

MJE13071
MJE13071

SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V V

4.176. mje13007f.pdf Size:351K _kec

MJE13071
MJE13071

SEMICONDUCTOR MJE13007F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ·Excellent Switching Times : ton=1.6? S(Max.), at IC=5A S(Max.), tf=0.7? ·High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 7

4.177. mje13007.pdf Size:339K _kec

MJE13071
MJE13071

SEMICONDUCTOR MJE13007 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ·Excellent Switching Times : ton=1.6? S(Max.), at IC=5A S(Max.), tf=0.7? ·High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 70

4.178. mje13005f.pdf Size:442K _kec

MJE13071
MJE13071

SEMICONDUCTOR MJE13005F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES ·Excellent Switching Times : ton=0.8? S(Max.), at IC=2A S(Max.), tf=0.9? ·High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL R

4.179. mje13005d.pdf Size:51K _kec

MJE13071
MJE13071

SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHARACT

4.180. mje13003.pdf Size:53K _kec

MJE13071
MJE13071

SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B HIGH VOLTAGE AND HIGH SPEED D C SWITCHING APPLICATION. E F FEATURES ·Excellent Switching Times G : ton=1.1? S(Max.), at IC=1A S(Max.), tf=0.7? H ·High Collector Voltage : VCBO=700V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.

4.181. mje13004d.pdf Size:366K _kec

MJE13071
MJE13071

SEMICONDUCTOR MJE13004D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B D HIGH VOLTAGE AND HIGH SPEED C SWITCHING APPLICATION. E F FEATURES G ·Built-in Free Wheeling Diode H ·Suitable for Electrouic Ballast Application DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 MAXIMUM RATING (Ta=25?) _ + F 11.0 0.3 G 2.9 MAX

4.182. mje13005.pdf Size:436K _kec

MJE13071
MJE13071

SEMICONDUCTOR MJE13005 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES Excellent Switching Times : ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UN

4.183. mje13003hv.pdf Size:41K _kec

MJE13071
MJE13071

SEMICONDUCTOR MJE13003HV TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A HIGH VOLTAGE AND HIGH SPEED B D C SWITCHING APPLICATION. E F FEATURES Excellent Switching Times G : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A H High Collector Voltage : VCBO=900V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXI

4.184. mje13005df.pdf Size:375K _kec

MJE13071
MJE13071

SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C ·Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S ·Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E ·Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM RATI

4.185. mje13009.pdf Size:157K _inchange_semiconductor

MJE13071
MJE13071

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

4.186. mje13009f.pdf Size:143K _inchange_semiconductor

MJE13071
MJE13071

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE13009F DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7?s(Max.)@ IC= 8.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit

4.187. mje13002.pdf Size:120K _inchange_semiconductor

MJE13071
MJE13071

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

4.188. mje13004.pdf Size:120K _inchange_semiconductor

MJE13071
MJE13071

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13004 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounti

4.189. mje13003d.pdf Size:128K _inchange_semiconductor

MJE13071
MJE13071

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V

4.190. mje13003.pdf Size:169K _inchange_semiconductor

MJE13071
MJE13071

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter

4.191. mje13005.pdf Size:154K _inchange_semiconductor

MJE13071
MJE13071

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

4.192. mje13003b.pdf Size:178K _wietron

MJE13071
MJE13071

WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION: 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhanc

4.193. hmje13007.pdf Size:50K _hsmc

MJE13071
MJE13071

Spec. No. : HE200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-220 • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =2

4.194. hmje13005.pdf Size:52K _hsmc

MJE13071
MJE13071

Spec. No. : HE6741 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description • Switch Regulators TO-220 • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =25°C) A • Maximum Temperatures Storage

4.195. hmje13007a.pdf Size:50K _hsmc

MJE13071
MJE13071

Spec. No. : HE200501 HI-SINCERITY Issued Date : 2005.06.01 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-220 • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =

4.196. hmje13003d.pdf Size:51K _hsmc

MJE13071
MJE13071

Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-126ML • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T

4.197. hmje13003.pdf Size:140K _hsmc

MJE13071
MJE13071

Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-126 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=2

4.198. hmje13001.pdf Size:46K _hsmc

MJE13071
MJE13071

Spec. No. : HA200213 HI-SINCERITY Issued Date : 2002.06.01 Revised Date : 2005.02.05 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13001 NPN Triple Diffused Planar Type High Voltage Transistor Description The HMJE13001 is a medium power transistor designed for use in switching applications. TO-92 Features • High breakdown voltage • Low collector saturation voltage • Fast switching

4.199. hmje13009a.pdf Size:55K _hsmc

MJE13071
MJE13071

Spec. No. : HE200206 HI-SINCERITY Issued Date : 2002.02.01 Revised Date : 2006.07.04 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay driver

4.200. hmje13003e.pdf Size:83K _hsmc

MJE13071
MJE13071

Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-220 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=

4.201. mje13009a_1.pdf Size:207K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列

4.202. mje13009.pdf Size:206K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE 系列

4.203. mje13001ah.pdf Size:315K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13001AH NPN MJE /MJE SERIES TRANSISTORS MJE13001AH NPN MJE 系

4.204. mje13009a.pdf Size:252K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列

4.205. mje13001.pdf Size:388K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13001 NPN MJE /MJE SERIES TRANSISTORS MJE13001 NPN MJE 系列

4.206. mje13002aht.pdf Size:365K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE / MJE SERIES TRANSISTORS MJE13002AHT NPN MJE / MJE SERIES TRANSISTORS MJE13002AHT NPN MJE

4.207. mje13003br.pdf Size:385K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE 系

4.208. mje13002aht_1.pdf Size:445K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHT NPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHT

4.209. mje13003b.pdf Size:206K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE 系列

4.210. mje13003brh.pdf Size:385K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJ

4.211. mje13001h.pdf Size:313K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN BUL / BUL SERIES TRANSISTORS MJE13001H NPN BUL / BUL SERIES TRANSISTORS MJE13001H NPN BUL 系

4.212. mje13003d_1.pdf Size:232K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体

4.213. mje13003_2.pdf Size:233K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 系列

4.214. mje13007.pdf Size:234K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007 NPN MJE /MJE SERIES TRANSISTORS MJE13007 NPN MJE 系列

4.215. mje13003d.pdf Size:477K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体

4.216. mje13005d.pdf Size:232K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13005D NPN D / D SERIES TRANSISTORS MJE13005D NPN D 系列晶体

4.217. mje13003ht_1.pdf Size:212K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJ

4.218. mje13007m.pdf Size:221K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007M NPN MJE /MJE SERIES TRANSISTORS MJE13007M NPN MJE 系列

4.219. mje13003.pdf Size:430K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 系列

4.220. mje13003ht.pdf Size:550K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJ

4.221. mje13005.pdf Size:232K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE 系列

4.222. mje13007a.pdf Size:256K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007A NPN MJE /MJE SERIES TRANSISTORS MJE13007A NPN MJE 系列

4.223. mje13005_1.pdf Size:239K _sisemi

MJE13071
MJE13071

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE 系列

4.224. mje13009zj.pdf Size:450K _blue-rocket-elect

MJE13071
MJE13071

MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220S 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220S Plastic Package. 特征 / Features 高电压,大电流。 High VCEO High IC. , 用途 / Applications 用于高频电子照明电路。 High frequency electronic lighting ballast applications. 内部等效电路 / Equ

4.225. mje13002b.pdf Size:78K _first_silicon

MJE13071
MJE13071

SEMICONDUCTOR MJE13002B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=0.5μS(Max.), tf=0.7μS(Max.), at IC=0.8A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _

4.226. mje13003t.pdf Size:169K _first_silicon

MJE13071
MJE13071

SEMICONDUCTOR MJE13003T TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. D FEATURES E A Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A C F G DIM MILLIMETERS High Collector Voltage : VCBO=700V. B A 8.3 MAX B 11.3±0.3 C 4.15 TYP 1 2 3 D 3.2±0.2 E 2.0±0.2 H F 2.8±0.1 I G 3.2±0.1 MAXIMUM RA

4.227. mje13003_to126.pdf Size:98K _first_silicon

MJE13071
MJE13071

SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. TO-126 FEATURES Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A 1.BASE High Collector Voltage : VCBO=700V. 2.COLLECTOR 3.EMITTER MAXIMUM RATING (Ta=25˚C) 1 2 3 CHARACTERISTIC SYMBOL RATING UNIT VC

4.228. mje13003b.pdf Size:77K _first_silicon

MJE13071
MJE13071

SEMICONDUCTOR MJE13003B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=0.5μS(Max.), tf=0.7μS(Max.), at IC=1A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _ MA

4.229. mje13005t.pdf Size:299K _first_silicon

MJE13071
MJE13071

SEMICONDUCTOR MJE13005T TECHNICAL DATA MJE13005T TRANSISTOR (NPN) unit High frequency electronic lighting switching power supply applications. Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P (Ta=25℃) 1.25 W C P (Tc=25℃) 50 W C T 150 ℃ j T -55~150 ℃ stg Electrical characteristics(Ta=25℃) Rating Symbol Test condition Unit

4.230. mje13003i.pdf Size:205K _first_silicon

MJE13071
MJE13071

SEMICONDUCTOR MJE13003I TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. DIM MILLIMETERS A 2.20 ± 0.2 B 1.50 ± 0.15 FEATURES c 0.5 ± 0.07 Excellent Switching Times D 6.50 ± 0.15 1 2 3 : ton=1.1μS(Max.), tf=0.5μS(Max.), at IC=1.0A e 2.30 typ L 7.70 ± 0.2 High Collector Voltage : VCBO=700V. A1 1.20 ± 0.05 b1 0.8 ± 0.1

4.231. mje13007f.pdf Size:286K _first_silicon

MJE13071
MJE13071

SEMICONDUCTOR MJE13007F TECHNICAL DATA C MJE13007F A TRANSISTOR (NPN) SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS _ A 10 16 0 20 + HIGH SPEED DC-DC CONVERTER APPLICATION. _ B 15 00 0 20 + _ C 3 00 0 20 + FLUORESCENT LIGHT BALLASTOR APPLICATION. D 0 625±0 125 E 3 50 typ F 2 7 typ _ G 16 80 0 4 + L M FEATURES _ H 0 45 0 1

4.232. mje13005f.pdf Size:251K _first_silicon

MJE13071
MJE13071

SEMICONDUCTOR MJE13005F TECHNICAL DATA C MJE13005F TRANSISTOR (NPN) A SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS _ A 10 16 0 20 + HIGH SPEED DC-DC CONVERTER APPLICATION. _ B 15 00 0 20 + _ C 3 00 0 20 + FLUORESCENT LIGHT BALLASTOR APPLICATION. D 0 625±0 125 E 3 50 typ F 2 7 typ _ G 16 80 0 4 + FEATURES L M _ H 0 45 0 1

4.233. mje13003d.pdf Size:299K _first_silicon

MJE13071
MJE13071

SEMICONDUCTOR MJE13003D TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. A I C J FEATURES Excellent Switching Times : ton=1.1μS(Max.), tf=0.5μS(Max.), at IC=1.0A DIM MILLIMETERS A 6 50 ± 0 2 High Collector Voltage : VCBO=700V. B 5 60 ± 0 2 C 5 20 ± 0 2 D 1 50 ± 0 2 MAXIMUM RATING (Ta=25˚C) E 2 70 ± 0 2 F 2 30 ± 0 1

4.234. mje13003a.pdf Size:97K _first_silicon

MJE13071
MJE13071

SEMICONDUCTOR MJE13003A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _

Datasheet: MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MJE13009 , MJE13070 , C103 , MJE1320 , MJE15028 , MJE15029 , MJE15030 , MJE15031 , MJE16002 , MJE16004 , MJE16106 .

 


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