MJE1661 Datasheet. Specs and Replacement

Type Designator: MJE1661  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO126

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MJE1661 datasheet

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Order this document MOTOROLA by MJE16002/D SEMICONDUCTOR TECHNICAL DATA * MJE16002 Designer's Data Sheet * MJE16004 SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high voltage, high speed switching of inductive 5.0 AMPERE circuits where fall time and RBSOA are critical. They are particularly well suited for N... See More ⇒

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Detailed specifications: MJE15029, MJE15030, MJE15031, MJE16002, MJE16004, MJE16106, MJE16204, MJE1660, 2N2907, MJE170, MJE171, MJE172, MJE180, MJE18002, MJE18004, MJE18006, MJE18008

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