MJE180 Datasheet, Equivalent, Cross Reference Search

MJE180/181/182Low Power Audio Amplifier Low Current High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : MJE180 60 V : MJE181 80 V : MJE182 100 V VCEO Collector-Emitter Voltage : MJE180 40 V : MJE181 60 V

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc Silicon NPN Power Transistor MJE180DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 40 VCEO(SUS)DC Current Gain: h = 30(Min) @ I = 0.5 AFE C= 12(Min) @ I = 1.5 ACComplement to the PNP MJE170Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow power audio amplifierLow current high speed switchin

Order this documentMOTOROLAby MJE18002D2/DSEMICONDUCTOR TECHNICAL DATAMJE18002D2Advance InformationPOWER TRANSISTORS2 AMPERESHigh Speed, High Gain Bipolar1000 VOLTSNPN Power Transistor with50 WATTSIntegrated Collector-EmitterDiode and Built-in EfficientAntisaturation NetworkThe MJE18002D2 use a newly developed technology, so called H2BIP*, to designthe state of a

Order this documentMOTOROLAby MJE18009/DSEMICONDUCTOR TECHNICAL DATAMJE18009Designer's Data SheetMJF18009SWITCHMODE NPN SiliconPlanar Power TransistorPOWER TRANSISTORSThe MJE/MJF18009 has an application specific stateoftheart die designed for10 AMPERESuse in 220 V lineoperated Switchmode Power supplies and electronic ballast (light1000 VOLTSballa

Order this documentMOTOROLAby MJE18008/DSEMICONDUCTOR TECHNICAL DATA*MJE18008Designer's Data Sheet*MJF18008SWITCHMODE*Motorola Preferred DeviceNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsPOWER TRANSISTOR8.0 AMPERESThe MJE/MJF18008 have an applications specific stateoftheart die designed1000 VOLTSfor use in 220 V lineoper

Order this documentMOTOROLAby MJE18006/DSEMICONDUCTOR TECHNICAL DATA*MJE18006Designer's Data Sheet*MJF18006SWITCHMODE*Motorola Preferred DeviceNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsPOWER TRANSISTOR6.0 AMPERESThe MJE/MJF18006 have an applications specific stateoftheart die designed1000 VOLTSfor use in 220 V lineoper

Order this documentMOTOROLAby MJE18004/DSEMICONDUCTOR TECHNICAL DATADesigner's Data Sheet*MJE18004SWITCHMODE*MJF18004NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsPOWER TRANSISTORThe MJE/MJF18004 have an applications specific stateoftheart die designed5.0 AMPERESfor use in 220 V line operated Switchmod

Order this documentMOTOROLAby MJE18002/DSEMICONDUCTOR TECHNICAL DATADesigner's Data SheetMJE18002*SWITCHMODEMJF18002*NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsThe MJE/MJF18002 have an applications specific stateoftheart die designed POWER TRANSISTORfor use in 220 V line operated Switchmode Power supplies a

Order this documentMOTOROLAby MJE18004D2/DSEMICONDUCTOR TECHNICAL DATAMJE18004D2Designer's Data SheetPOWER TRANSISTORS5 AMPERESHigh Speed, High Gain Bipolar1000 VOLTSNPN Power Transistor with75 WATTSIntegrated Collector-EmitterDiode and Built-in EfficientAntisaturation NetworkThe MJE18004D2 is stateofart High Speed High gain BIPolar transistor (H2BIP).Hi

DATA SHEETwww.onsemi.comSwitch-mode NPN BipolarPOWER TRANSISTORPower Transistor8.0 AMPERES1000 VOLTSFor Switching Power Supply Applications 45 and 125 WATTSCOLLECTORMJE180082,4The MJE18008 have an applications specific state-of-the-art diedesigned for use in 220 V line-operated switch-mode Power supplies1and electronic light ballasts. BASEFeatures3EMITTER

MJE18006GSWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE18006G has an applications specific state-of-the-art diehttp://onsemi.comdesigned for use in 220 V line-operated SWITCHMODE Powersupplies and electronic light ballasts.POWER TRANSISTORFeatures6.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements:1000 VOLTS - 100

MJE18004D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturation http://onsemi.comNetworkPOWER TRANSISTORSThe MJE18004D2 is state-of-art High Speed High gain BIPolar5 AMPERES,transistor (H2BIP). High dynamic characteristics and lot to lotminimum spread (150 ns on storage time) make it ideally suitable

MJE18004G, MJF18004GSWITCHMODENPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004G have an applications specific state-of-the-artdie designed for use in 220 V line-operated SWITCHMODE Powerhttp://onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60

MJE18004, MJF18004Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES Hi

MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -

MJE18002GSWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE18002G have an applications specific state-of-the-art diehttp://onsemi.comdesigned for use in 220 V line operated Switchmode Power suppliesand electronic light ballasts.POWER TRANSISTORFeatures2.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements:100 VOLTS - 50 W

MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi

MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172MJE180, MJE181, MJE182MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORSMJE180, 181, 182 NPN PLASTIC POWER TRANSISTORSLow Power Audio Amplifier and Low Current, High Speed Switching ApplicationsPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BA

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI

isc Silicon NPN Power Transistor MJE18008DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor MJE18006DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor MJE18004DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor MJE18002DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET