MJE2102
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE2102
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 1
MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package:
TO220
MJE2102
Transistor Equivalent Substitute - Cross-Reference Search
MJE2102
Datasheet (PDF)
8.1. Size:63K st
mje210.pdf 
MJE210SILICON PNP TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTORDESCRIPTION The MJE210 is a silicon epitaxial-base PNPtransistor in Jedec SOT-32 plastic package,designed for low voltage, low power, high gainaydio amplifier applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE
8.2. Size:53K st
mje210 2.pdf
MJE210SILICON PNP TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORDESCRIPTION The MJE210 is a silicon Epitaxial-Base PNPtransistor in Jedec SOT-32 plastic package,designed for low voltage, low power, high gainaudio amplifier applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base
8.3. Size:41K fairchild semi
mje210.pdf
MJE210Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) Complement to MJE200TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 2
8.4. Size:115K onsemi
mje200 mje210.pdf
MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE
8.5. Size:164K onsemi
mje200g mje210g.pdf
MJE200G (NPN),MJE210G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES High DC Current GainPOWER TRANSISTORS Low Collector-Emitter Saturation VoltageCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc
8.6. Size:115K onsemi
mje210g.pdf
MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE
8.7. Size:115K onsemi
mje210t.pdf
MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE
Datasheet: 2SA1771
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, 2SA1790
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, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
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, 2SA180
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, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
