All Transistors. MJE2102 Datasheet

 

MJE2102 Datasheet and Replacement


   Type Designator: MJE2102
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
 

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MJE2102 Datasheet (PDF)

 8.1. Size:63K  st
 mje210.pdf pdf_icon

MJE2102

MJE210SILICON PNP TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTORDESCRIPTION The MJE210 is a silicon epitaxial-base PNPtransistor in Jedec SOT-32 plastic package,designed for low voltage, low power, high gainaydio amplifier applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE

 8.2. Size:53K  st
 mje210 2.pdf pdf_icon

MJE2102

MJE210SILICON PNP TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORDESCRIPTION The MJE210 is a silicon Epitaxial-Base PNPtransistor in Jedec SOT-32 plastic package,designed for low voltage, low power, high gainaudio amplifier applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base

 8.3. Size:41K  fairchild semi
 mje210.pdf pdf_icon

MJE2102

MJE210Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) Complement to MJE200TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 2

 8.4. Size:115K  onsemi
 mje200 mje210.pdf pdf_icon

MJE2102

MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BF423A3 | 2SC1762-2 | 2DA1774Q | KCX19 | BC317A | TIX813 | NB013FK

Keywords - MJE2102 transistor datasheet

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