MJE2482 PDF Specs and Replacement
Type Designator: MJE2482
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
MJE2482 Substitution
MJE2482 PDF detailed specifications
mje243re.pdf
Order this document MOTOROLA by MJE243/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE243 Plastic Transistors PNP . . . designed for low power audio amplifier and low current, high speed switching * MJE253 applications. High Collector Emitter Sustaining Voltage *Motorola Preferred Device VCEO(sus) = 100 Vdc (Min) MJE243, MJE253 High DC... See More ⇒
mje243 mje253.pdf
MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =... See More ⇒
mje243g.pdf
MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =... See More ⇒
Detailed specifications: MJE2371 , MJE240 , MJE241 , MJE242 , MJE243 , MJE244 , MJE2480 , MJE2481 , 2SA1837 , MJE2483 , MJE2490 , MJE2491 , MJE250 , MJE251 , MJE252 , MJE2520 , MJE2521 .
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