All Transistors. MJE3055 Datasheet

 

MJE3055 Transistor. Datasheet pdf. Equivalent

Type Designator: MJE3055

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO126

MJE3055 Transistor Equivalent Substitute - Cross-Reference Search

MJE3055 Datasheet (PDF)

1.1. mje3055t_mje2955t.pdf Size:129K _motorola

MJE3055
MJE3055

Order this document MOTOROLA by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP * MJE2955T Complementary Silicon Plastic NPN * MJE3055T Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — 10 AMPERE IIIIIIIIIIIIIIIIIIIIIII fT = 2.0

1.2. mje2955t_mje3055t.pdf Size:59K _st

MJE3055
MJE3055

MJE2955T MJE3055T ® COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary 3 2 PNP type is MJE2955T. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM

1.3. mje3055t.pdf Size:36K _fairchild_semi

MJE3055
MJE3055

MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Vol

1.4. mje2955t_mje3055t.pdf Size:138K _onsemi

MJE3055
MJE3055

MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 10 AMPERE • DC Current Gain Specified to 10 A COMPLEMENTARY SILICON • High Current Gain - Bandwidth Product - POWER TRANSISTORS fT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS = 500 mAdc • Pb

1.5. mje3055t.pdf Size:114K _utc

MJE3055
MJE3055

UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Lead-free: MJE3055TL Halogen-free: MJE3055TG ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 MJE3055T-TA3-T MJE3055TL-TA

1.6. mje2955t_mje3055t.pdf Size:273K _cdil

MJE3055
MJE3055

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220 Plastic Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 60 V Collector Base Voltage VCBO 7

1.7. mje3055.pdf Size:226K _inchange_semiconductor

MJE3055
MJE3055

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETE

1.8. mje3055t.pdf Size:137K _inchange_semiconductor

MJE3055
MJE3055

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

1.9. mje3055.pdf Size:223K _lge

MJE3055
MJE3055

MJE3055(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -

1.10. mje3055.pdf Size:128K _wietron

MJE3055
MJE3055

MJE3055 Plastic-Encapsulate Power Transistors 1 2 3 1. BASE 2. COLLECTOR TO-220 3. EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Value Rating Symbol Unit Collector-Emitter Voltage V 60 CEO Vdc Collector-Base Voltage VCBO 70 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current (DC) IC(DC) 10 Adc Total Device Disspation T =25 C C 75 W PD Derate above 25 C 0.6 W/ C -55 to

1.11. hmje3055t.pdf Size:41K _hsmc

MJE3055
MJE3055

Spec. No. : HE6737 HI-SINCERITY Issued Date : 1993.09.24 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/4 HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperature Storage Temperature .....................................

Datasheet: MJE2955 , MJE2955K , MJE2955T , MJE29A , MJE29B , MJE29C , MJE30 , MJE3054 , 9015 , MJE3055K , MJE3055T , MJE30A , MJE30B , MJE30C , MJE31 , MJE31A , MJE31B .

 


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