All Transistors. MJE3055 Datasheet

 

MJE3055 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJE3055

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO126

MJE3055 Transistor Equivalent Substitute - Cross-Reference Search

 

MJE3055 Datasheet (PDF)

0.1. mje2955t mje3055t mje2955t.pdf Size:129K _motorola

MJE3055
MJE3055

Order this documentMOTOROLAby MJE2955T/DSEMICONDUCTOR TECHNICAL DATAPNP*MJE2955TComplementary Silicon PlasticNPN*MJE3055TPower Transistors. . . designed for use in general pur

0.2. mje2955t mje3055t.pdf Size:59K _st

MJE3055
MJE3055

MJE2955TMJE3055TCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPNtransistor in Jedec TO-220 package. It isintended for power switching circuits andgeneral-purpose amplifiers. The complementary 32PNP type is MJE2955T.1TO-220INTERNAL SCHEMATIC DIA

 0.3. mje3055t.pdf Size:36K _fairchild_semi

MJE3055
MJE3055

MJE3055TGeneral Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product : fT = 2MHz (Min.)TO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

0.4. mje2955t mje3055t.pdf Size:138K _onsemi

MJE3055
MJE3055

MJE2955T (PNP)MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. http://onsemi.comFeatures10 AMPERE DC Current Gain Specified to 10 ACOMPLEMENTARY SILICON High Current Gain - Bandwidth Product -POWER TRANSISTORSfT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS= 500 mAd

 0.5. mje3055tg.pdf Size:135K _onsemi

MJE3055
MJE3055

MJE2955T (PNP)MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. http://onsemi.comFeatures10 AMPERE DC Current Gain Specified to 10 ACOMPLEMENTARY SILICON High Current Gain - Bandwidth Product -POWER TRANSISTORSfT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS= 500 mAd

0.6. mje3055t.pdf Size:114K _utc

MJE3055
MJE3055

UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Lead-free: MJE3055TL Halogen-free: MJE3055TG ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3MJE3055T-TA3-T MJE3055TL

0.7. mje2955t mje3055t.pdf Size:273K _cdil

MJE3055
MJE3055

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS MJE2955T PNPMJE3055T NPNTO-220Plastic PackageWith excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCEO Collector Emitter Voltage 60 VCollector Base Voltage VCB

0.8. mje3055.pdf Size:223K _lge

MJE3055
MJE3055

MJE3055(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOTR 3. EMITTER 3 21Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Curr

0.9. mje3055.pdf Size:128K _wietron

MJE3055
MJE3055

MJE3055Plastic-Encapsulate Power Transistors1231. BASE2. COLLECTORTO-2203. EMITTERABSOLUTE MAXIMUM RATINGS (Ta=25 C)ValueRating SymbolUnitCollector-Emitter Voltage V 60CEO VdcCollector-Base Voltage VCBO70 VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current (DC) IC(DC)10 AdcTotal Device Disspation T =25 CC 75WPDDerate above 25 C0.6W/ C-55

0.10. hmje3055t.pdf Size:41K _hsmc

MJE3055
MJE3055

Spec. No. : HE6737HI-SINCERITYIssued Date : 1993.09.24Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/4HMJE3055TNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMJE3055T is designed for general purpose of amplifier and switchingapplications.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperatureStorage Temperature ..................................

0.11. mje3055a.pdf Size:165K _nell

MJE3055
MJE3055

MJE3055A(NPN)RoHS MJE2955A(PNP)SEMICONDUCTOR RoHS Nell High Power Products Complementary Silicon power transistors(10A / 60V / 75W)FEATURES Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 AdcExcellent safe operating area 123TO-220AB DESCRIPTI

0.12. mje3055at.pdf Size:213K _inchange_semiconductor

MJE3055
MJE3055

isc Silicon NPN Power Transistor MJE3055ATDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain-: h = 150-260@I = 1AFE CBandwidth Product-: f = 2MHz(Min)@I = 500 mAT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier and switchingapp

0.13. mje3055.pdf Size:226K _inchange_semiconductor

MJE3055
MJE3055

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) High DC Current Gain- : hFE= 20-100@IC= 4A Complement to Type MJE2955 APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PAR

0.14. mje3055t.pdf Size:137K _inchange_semiconductor

MJE3055
MJE3055

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) High DC Current Gain- : hFE= 20-100@IC= 4A Complement to Type MJE2955T APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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