MJE3055 - описание и поиск аналогов

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L MJE3055 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER General Purpose and Switching Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitt

MJE3055(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Curr

MJE3055 Plastic-Encapsulate Power Transistors 1 2 3 1. BASE 2. COLLECTOR TO-220 3. EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Value Rating Symbol Unit Collector-Emitter Voltage V 60 CEO Vdc Collector-Base Voltage VCBO 70 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current (DC) IC(DC) 10 Adc Total Device Disspation T =25 C C 75 W PD Derate above 25 C 0.6 W/ C -55

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO = 60V(Min) High DC Current Gain- hFE= 20-100@IC= 4A Complement to Type MJE2955 APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PAR

Order this document MOTOROLA by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP * MJE2955T Complementary Silicon Plastic NPN * MJE3055T Power Transistors . . . designed for use in general purpose amplifier and switching applications. *Motorola Preferred Device DC Current Gain Specified to 10 Amperes High Current Gain Bandwidth Product 10 AMPERE

MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary 3 2 PNP type is MJE2955T. 1 TO-220 INTERNAL SCHEMATIC DIA

MJE3055T General Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product fT = 2MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http //onsemi.com Features 10 AMPERE DC Current Gain Specified to 10 A COMPLEMENTARY SILICON High Current Gain - Bandwidth Product - POWER TRANSISTORS fT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS = 500 mAd

MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 10 AMPERE High Current Gain - Bandwidth Product COMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS 60 VOLTS - 75 WATTS MAXIMUM RATINGS Rating

UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Lead-free MJE3055TL Halogen-free MJE3055TG ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 MJE3055T-TA3-T MJE3055TL

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220 Plastic Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 60 V Collector Base Voltage VCB

Spec. No. HE6737 HI-SINCERITY Issued Date 1993.09.24 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/4 HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperature Storage Temperature ..................................

MJE3055A(NPN) RoHS MJE2955A(PNP) SEMICONDUCTOR RoHS Nell High Power Products Complementary Silicon power transistors (10A / 60V / 75W) FEATURES Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product fT = 2 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating area 1 2 3 TO-220AB DESCRIPTI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO = 60V(Min) High DC Current Gain- hFE= 20-100@IC= 4A Complement to Type MJE2955T APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P

isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain- h = 150-260@I = 1A FE C Bandwidth Product- f = 2MHz(Min)@I = 500 mA T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching app