2N43 Datasheet and Replacement

Order this documentMOTOROLAby 2N4398/DSEMICONDUCTOR TECHNICAL DATA2N4347(See 2N3442)PNP Silicon High-PowerTransistors2N4398. . . designed for use in power amplifier and switching circuits. Low CollectorEmitter Saturation Voltage 2N4399IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,992N5745IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745

2N/PN/SST4391 SeriesVishay SiliconixN-Channel JFETs2N4391 PN4391 SST43912N4392 PN4392 SST43922N4393 PN4393 SST4393PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)2N/PN/SST4391 4 to 10 30 5 42N/PN/SST4392 2 to 5 60 5 42N/PN/SST4393 0.5 to 3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 4391

2N4338/4339/4340/4341Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)2N4338 -0.3 to -1 -50 0.6 0.62N4339 -0.6 to -1.8 -50 0.8 1.52N4340 -1 to -3 -50 1.3 3.62N4341 -2 to -6 -50 2 9FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: 2N4338

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2N34422N4347HIGH POWER INDUSTRIAL TRANSISTORSHIGH POWER INDUSTRIAL TRANSISTORSNPN silicon transistors designed for applications in industrial and commercial equipment including highfidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta

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2N4393DCSMSEMELABSMALL SIGNAL DUALNCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEFOR HIGH RELIABILITY APPLICATIONSMECHANICAL DATADimensions in mm (inches)1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)FEATURES2 3 HERMETIC CERAMIC SURFACE MOUNT1 4A PACKAGE 0.236 5rad.(0.009) CECC SC

2N4392MECHANICAL DATADimensions in mm (inches)JFET SWITCHING5.84 (0.230)5.31 (0.209)4.95 (0.195)N CHANNEL- DEPLETION4.52 (0.178)FEATURES LOW ON RESISTANCE0.48 (0.019)0.41 (0.016) FAST SWITCHINGdia. MILITARY OPTIONS AVAILABLE2.54 (0.100)Nom.3 12APPLICATIONS: SWITCHING APPLICATIONSTO18 METAL PACKAGEUnderside ViewPIN 1 Source PIN 2

2N4391MECHANICAL DATADimensions in mm (inches)JFET SWITCHING5.84 (0.230)5.31 (0.209)4.95 (0.195)N CHANNEL- DEPLETION4.52 (0.178)FEATURES LOW ON RESISTANCE0.48 (0.019)0.41 (0.016) FAST SWITCHINGdia. MILITARY OPTIONS AVAILABLE2.54 (0.100)Nom.3 12APPLICATIONS: SWITCHING APPLICATIONSTO18 METAL PACKAGEUnderside ViewPIN 1 Source PIN 2

SILICON SMALL SIGNAL N-CHANNEL JFET 2N4393C1 Hermetic Surface Mounted Package. Designed For High Reliability and Space Applications. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 40V VGS Gate Source Voltage -40V VGD Gate Drain Voltage -40V IG Gate Current 50mA PD TA = 25C

P-Channel Enhancement ModeMOSFET Amplifier/SwitchCORPORATION2N4352FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low ON Resistance Low Capacitance Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V High Gain Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V P-Chann

N-Channel JFET SwitchCORPORATION2N4391 2N4393 / PN4391 PN4393 / SST4391 SST4393FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A r

N-Channel JFETLow Noise AmplifierCORPORATION2N4338 2N4341FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Exceptionally High Figure of Merit Radiation Immunity Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Extremely Low Noise and Capacitance Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2N4351 N-CHANNEL MOSFET Linear Integrated Systems ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA TO-72HIGH GAIN gfs = 1000S BOTTOM VIEWABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) G 2 3 DMaximum Temperatures Storage Temperature -65 to +200 C Operating Junction Temperature -55 to +150 C 1 4S

isc Silicon NPN Power Transistor 2N4347DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for application in industrial and commercialequipment including high fidelity audio amplifier,seriesand shunt regulators and

isc Silicon NPN Power Transistor 2N4348DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4399 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5302 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon NPN Power Transistor 2N4395DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon PNP Power Transistor 2N4387DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,CECC,andJAN,JANTX and JANTXV and JA

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4398 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5301 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon NPN Power Transistor 2N4396DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon PNP Power Transistor 2N4388DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,CECC,andJAN,JANTX and JANTXV and JA

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified o