2N43 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N43 Specs and Replacement

Type Designator: 2N43

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 1.3 MHz

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 53

Noise Figure, dB: -

Package: U10

2N43 Substitution

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2N43 datasheet

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2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 4 to 10 30 5 4 2N/PN/SST4392 2 to 5 60 5 4 2N/PN/SST4393 0.5 to 3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 4391... See More ⇒

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2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) 2N4338 -0.3 to -1 -50 0.6 0.6 2N4339 -0.6 to -1.8 -50 0.8 1.5 2N4340 -1 to -3 -50 1.3 3.6 2N4341 -2 to -6 -50 2 9 FEATURES BENEFITS APPLICATIONS D Low Cutoff Voltage 2N4338 ... See More ⇒

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒

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2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta... See More ⇒

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2N4393DCSM SEME LAB SMALL SIGNAL DUAL N CHANNEL J FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) FEATURES 2 3 HERMETIC CERAMIC SURFACE MOUNT 1 4 A PACKAGE 0.23 6 5 rad. (0.009) CECC SC... See More ⇒

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2N4392 MECHANICAL DATA Dimensions in mm (inches) JFET SWITCHING 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) N CHANNEL- DEPLETION 4.52 (0.178) FEATURES LOW ON RESISTANCE 0.48 (0.019) 0.41 (0.016) FAST SWITCHING dia. MILITARY OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS SWITCHING APPLICATIONS TO 18 METAL PACKAGE Underside View PIN 1 Source PIN 2... See More ⇒

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2N4391 MECHANICAL DATA Dimensions in mm (inches) JFET SWITCHING 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) N CHANNEL- DEPLETION 4.52 (0.178) FEATURES LOW ON RESISTANCE 0.48 (0.019) 0.41 (0.016) FAST SWITCHING dia. MILITARY OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS SWITCHING APPLICATIONS TO 18 METAL PACKAGE Underside View PIN 1 Source PIN 2... See More ⇒

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SILICON SMALL SIGNAL N-CHANNEL JFET 2N4393C1 Hermetic Surface Mounted Package. Designed For High Reliability and Space Applications. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VDS Drain Source Voltage 40V VGS Gate Source Voltage -40V VGD Gate Drain Voltage -40V IG Gate Current 50mA PD TA = 25 C ... See More ⇒

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P-Channel Enhancement Mode MOSFET Amplifier/Switch CORPORATION 2N4352 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Low ON Resistance Low Capacitance Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V High Gain Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V P-Chann... See More ⇒

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N-Channel JFET Low Noise Amplifier CORPORATION 2N4338 2N4341 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Exceptionally High Figure of Merit Radiation Immunity Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Extremely Low Noise and Capacitance Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

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2N4351 N-CHANNEL MOSFET Linear Integrated Systems ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA TO-72 HIGH GAIN gfs = 1000 S BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) G 2 3 D Maximum Temperatures Storage Temperature -65 to +200 C Operating Junction Temperature -55 to +150 C 1 4 S ... See More ⇒

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isc Silicon NPN Power Transistor 2N4347 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for application in industrial and commercial equipment including high fidelity audio amplifier,series and shunt regulators and... See More ⇒

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isc Silicon NPN Power Transistor 2N4348 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4399 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5302 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒

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isc Silicon NPN Power Transistor 2N4395 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

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isc Silicon PNP Power Transistor 2N4387 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JA... See More ⇒

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4398 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5301 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒

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isc Silicon NPN Power Transistor 2N4396 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified o... See More ⇒

Detailed specifications: 2N4292, 2N4293, 2N4294, 2N4295, 2N4296, 2N4297, 2N4298, 2N4299, BC549, 2N4300, 2N4301, 2N4305, 2N4306, 2N4307, 2N4308, 2N4309, 2N431