MJE32B Specs and Replacement
Type Designator: MJE32B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO126
MJE32B Substitution
MJE32B detailed specifications
NO specs!
Detailed specifications: MJE30B , MJE30C , MJE31 , MJE31A , MJE31B , MJE31C , MJE32 , MJE32A , 2SC828 , MJE32C , MJE33 , MJE3300 , MJE3301 , MJE3302 , MJE3310 , MJE3311 , MJE3312 .
History: KTD718 | 2T3609 | 2T7234B | MJE32C
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