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MJE340K Specs and Replacement

Type Designator: MJE340K

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

 MJE340K Substitution

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MJE340K datasheet

 8.1. Size:117K  motorola

mje340re.pdf pdf_icon

MJE340K

Order this document MOTOROLA by MJE340/D SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN 0.5 AMPERE Silicon Transistor POWER TRANSISTOR NPN SILICON . . . useful for high voltage general purpose applications. 300 VOLTS Suitable for Transformerless, Line Operated Equipment 20 WATTS Thermopad Construction Provides High Power Dissipation Rating for High Relia... See More ⇒

 8.2. Size:594K  st

mje340 mje350.pdf pdf_icon

MJE340K

MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred salestypes Complementary NPN - PNP devices Applications Linear and switching industrial equipment 3 2 1 Description SOT-32 The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complemen... See More ⇒

 8.3. Size:66K  st

mje340-mje350.pdf pdf_icon

MJE340K

MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. S... See More ⇒

 8.4. Size:37K  fairchild semi

mje340.pdf pdf_icon

MJE340K

MJE340 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO... See More ⇒

Detailed specifications: MJE3312 , MJE3370 , MJE3371 , MJE33A , MJE33B , MJE33C , MJE34 , MJE340 , TIP41C , MJE341 , MJE341K , MJE3439 , MJE344 , MJE3440 , MJE344K , MJE345 , MJE34A .

History: 2SC2625 | TIP35AT

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