Справочник транзисторов. MJE340K

 

Биполярный транзистор MJE340K Даташит. Аналоги


   Наименование производителя: MJE340K
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO220
 

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MJE340K Datasheet (PDF)

 8.1. Size:117K  motorola
mje340re.pdfpdf_icon

MJE340K

Order this documentMOTOROLAby MJE340/DSEMICONDUCTOR TECHNICAL DATAMJE340Plastic Medium Power NPN0.5 AMPERESilicon TransistorPOWER TRANSISTORNPN SILICON. . . useful for highvoltage general purpose applications.300 VOLTS Suitable for Transformerless, LineOperated Equipment20 WATTS Thermopad Construction Provides High Power Dissipation Rating for HighRelia

 8.2. Size:594K  st
mje340 mje350.pdfpdf_icon

MJE340K

MJE340MJE350Complementary silicon power transistorsFeatures STMicroelectronics preferred salestypes Complementary NPN - PNP devicesApplications Linear and switching industrial equipment321DescriptionSOT-32The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32.The complemen

 8.3. Size:66K  st
mje340-mje350.pdfpdf_icon

MJE340K

MJE340MJE350COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe MJE340 is a silicon epitaxial planar NPN12transistor intended for use in medium power3linear and switching applications.It is mounted inSOT-32.The complementary PNP type is MJE350. S

 8.4. Size:37K  fairchild semi
mje340.pdfpdf_icon

MJE340K

MJE340High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 VVEBO

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N5682X | KSH117 | 2SA727 | TP5551R | KD138 | STE07DE220 | PEMB14

 

 
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