All Transistors. MJE3439 Datasheet

 

MJE3439 Datasheet and Replacement


   Type Designator: MJE3439
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO126
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MJE3439 Datasheet (PDF)

 0.1. Size:100K  motorola
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MJE3439

Order this documentMOTOROLAby MJE3439/DSEMICONDUCTOR TECHNICAL DATAMJE3439NPN Silicon High-Voltage Power0.3 AMPERETransistorsPOWER TRANSISTORNPN SILICON. . . designed for use in lineoperated equipment requiring high fT.350 VOLTS High DC Current Gain15 WATTShFE = 40160 @ IC = 20 mAdc Current Gain Bandwidth Product fT = 15 MHz (Min) @ IC = 10 mAdc

 0.2. Size:54K  onsemi
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MJE3439

MJE3439NPN Silicon High-VoltagePower TransistorThis device is designed for use in line-operated equipmentrequiring high fT.Featureshttp://onsemi.com High DC Current Gain - hFE = 40-160 @ IC= 20 mAdc0.3 AMPERE Current Gain Bandwidth Product - fT = 15 MHz (Min) @ ICPOWER TRANSISTOR= 10 mAdcNPN SILICON Low Output Capacitance - Cob = 10 pF (Max) @ f350 VOLTS,

 0.3. Size:76K  onsemi
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MJE3439

MJE3439GNPN Silicon High-VoltagePower TransistorThis device is designed for use in line-operated equipmentrequiring high fT.Featureshttp://onsemi.com High DC Current Gain0.3 AMPERE High Current-Gain - Bandwidth Product Low Output CapacitancePOWER TRANSISTOR These Devices are Pb-Free and are RoHS Compliant*NPN SILICON350 VOLTS, 15 WATTSMAXIMUM RATINGSC

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History: 16299 | 181T2A | BFW42 | 2SC1290 | 2C3960 | BSS82BL | TIP35AT

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