MJE3439 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE3439
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO126
MJE3439 Transistor Equivalent Substitute - Cross-Reference Search
MJE3439 Datasheet (PDF)
mje3439r.pdf
Order this documentMOTOROLAby MJE3439/DSEMICONDUCTOR TECHNICAL DATAMJE3439NPN Silicon High-Voltage Power0.3 AMPERETransistorsPOWER TRANSISTORNPN SILICON. . . designed for use in lineoperated equipment requiring high fT.350 VOLTS High DC Current Gain15 WATTShFE = 40160 @ IC = 20 mAdc Current Gain Bandwidth Product fT = 15 MHz (Min) @ IC = 10 mAdc
mje3439-d.pdf
MJE3439NPN Silicon High-VoltagePower TransistorThis device is designed for use in line-operated equipmentrequiring high fT.Featureshttp://onsemi.com High DC Current Gain - hFE = 40-160 @ IC= 20 mAdc0.3 AMPERE Current Gain Bandwidth Product - fT = 15 MHz (Min) @ ICPOWER TRANSISTOR= 10 mAdcNPN SILICON Low Output Capacitance - Cob = 10 pF (Max) @ f350 VOLTS,
mje3439g.pdf
MJE3439GNPN Silicon High-VoltagePower TransistorThis device is designed for use in line-operated equipmentrequiring high fT.Featureshttp://onsemi.com High DC Current Gain0.3 AMPERE High Current-Gain - Bandwidth Product Low Output CapacitancePOWER TRANSISTOR These Devices are Pb-Free and are RoHS Compliant*NPN SILICON350 VOLTS, 15 WATTSMAXIMUM RATINGSC
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
