MJE3439 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE3439
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 450 V
Tensión colector-emisor (Vce): 350 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar MJE3439
MJE3439 Datasheet (PDF)
mje3439r.pdf
Order this documentMOTOROLAby MJE3439/DSEMICONDUCTOR TECHNICAL DATAMJE3439NPN Silicon High-Voltage Power0.3 AMPERETransistorsPOWER TRANSISTORNPN SILICON. . . designed for use in lineoperated equipment requiring high fT.350 VOLTS High DC Current Gain15 WATTShFE = 40160 @ IC = 20 mAdc Current Gain Bandwidth Product fT = 15 MHz (Min) @ IC = 10 mAdc
mje3439-d.pdf
MJE3439NPN Silicon High-VoltagePower TransistorThis device is designed for use in line-operated equipmentrequiring high fT.Featureshttp://onsemi.com High DC Current Gain - hFE = 40-160 @ IC= 20 mAdc0.3 AMPERE Current Gain Bandwidth Product - fT = 15 MHz (Min) @ ICPOWER TRANSISTOR= 10 mAdcNPN SILICON Low Output Capacitance - Cob = 10 pF (Max) @ f350 VOLTS,
mje3439g.pdf
MJE3439GNPN Silicon High-VoltagePower TransistorThis device is designed for use in line-operated equipmentrequiring high fT.Featureshttp://onsemi.com High DC Current Gain0.3 AMPERE High Current-Gain - Bandwidth Product Low Output CapacitancePOWER TRANSISTOR These Devices are Pb-Free and are RoHS Compliant*NPN SILICON350 VOLTS, 15 WATTSMAXIMUM RATINGSC
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
