MJE3521 Specs and Replacement

Type Designator: MJE3521

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO126

 MJE3521 Substitution

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MJE3521 datasheet

 9.1. Size:124K  motorola

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MJE3521

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 9.2. Size:594K  st

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MJE3521

MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred salestypes Complementary NPN - PNP devices Applications Linear and switching industrial equipment 3 2 1 Description SOT-32 The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complemen... See More ⇒

 9.3. Size:66K  st

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MJE3521

MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. S... See More ⇒

 9.4. Size:36K  fairchild semi

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MJE3521

MJE350 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE340 TO-126 1 1. Emitter 2.Collector 3.Base ..PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V... See More ⇒

Detailed specifications: MJE3440, MJE344K, MJE345, MJE34A, MJE34B, MJE34C, MJE350, MJE3520, S8050, MJE370, MJE370K, MJE371, MJE371K, MJE3738, MJE3739, MJE3740, MJE3741

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